STMicroelectronics PD57002-E

Overview

PD57002-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 65 V drain-source voltage and delivering 2 W output power with 15 dB gain at 960 MHz under 28 V supply. It features 4.75 W power dissipation at 70°C case temperature and 20 °C/W junction-to-case thermal resistance, optimized for digital cellular base station transmitters requiring high linearity and broadband operation up to 1 GHz.

For engineers reviewing the PD57002-E datasheet, PD57002-E pinout, PD57002-E application, or PD57002-E equivalent, key selection considerations include its PowerSO-10RF package thermal performance, 960 MHz small-signal gain flatness, load mismatch tolerance (10:1 VSWR), gate-source threshold voltage range (2.0–5.0 V), and suitability for Class AB RF final-stage amplification in commercial BTS infrastructure.

Technical Context

This device operates exclusively in common-source mode with lateral DMOS architecture, enabling stable RF performance across 925–960 MHz bands under fixed 28 V drain bias and 10–15 mA quiescent current. Its S-parameter data confirms broadband gain retention (S21 > 2.38 dB at 1500 MHz, VDS = 28 V, IDS = 75 mA) and input matching robustness (S11 < –10 dB up to 1 GHz).

Thermal design is anchored by the PowerSO-10RF package's 20 °C/W R_thJC, allowing reliable 2 W CW operation without forced cooling when mounted on ≥25 cm² copper area. The 165°C maximum junction temperature and MSL Level 3 moisture sensitivity define reflow and board-level reliability boundaries.

Key Specifications

Pinout & Package

The PD57002-E uses the PowerSO-10RF (formed lead, gull-wing) plastic surface-mount package-ST's JEDEC-approved high-power RF SMD solution with optimized RF grounding and thermal path via exposed drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6P21140HR5, PD57002-E offers superior 900 MHz gain flatness and smaller footprint but lower power; versus PD57003-E, it trades 1 W output and 1 dB gain for tighter thermal margins and proven longevity in legacy BTS deployments.

Availability

PD57002-E is available at Aetrix Electronics and suitable for cellular base station transmitters, UHF wireless infrastructure amplifiers, industrial RFID readers, and land mobile radio front-end PAs requiring stable component supply across multi-year production cycles.

Supply support for PD57002-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for industrial, automotive, and communications markets.

PD57002-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for broadband commercial and industrial base station applications demanding high linearity, thermal stability, and surface-mount manufacturability up to 1 GHz.

FAQ

What is the recommended gate bias voltage for linear operation at 960 MHz?

The datasheet specifies V_GS(Q) = 2.0–5.0 V at I_D = 10 mA and V_DS = 28 V. For optimal linearity and efficiency in Class AB operation, a gate bias of 3.5 V is recommended-verified by Figure 4 (I_D vs. V_GS) and Figure 14 (P_OUT vs. V_GS), which show peak gain and efficiency near this point.

Can PD57002-E be used in push-pull configuration?

No-PD57002-E is characterized and qualified only for common-source operation. Its PowerSO-10RF pinout lacks complementary terminals for push-pull pairing, and the datasheet provides no S-parameter or stability data for such configurations. Use dual-die RF transistors like PD57018-E for balanced topologies.

What is the minimum copper area required on PCB for thermal management?

For continuous 2 W operation at 70°C case temperature, ST recommends ≥25 cm² of 2-oz copper connected to the exposed drain pad. This achieves the rated 20 °C/W R_thJC; reducing copper area increases thermal resistance proportionally-e.g., 10 cm² raises R_thJC to ~32 °C/W per thermal simulation data in AN4405.

Does PD57002-E require external gate protection diodes?

Yes-although IGSS ≤ 1 µA at V_GS = 20 V, the gate oxide is susceptible to ESD damage. ST recommends placing a 100 Ω current-limiting resistor in series with the gate and a pair of back-to-back 18 V Zener diodes (e.g., BZX84-C18) from gate to source, as shown in application schematic Figure 18 of AN4285.