STMicroelectronics PD57006-E
- Part No.:
- PD57006-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
PD57006-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:

- Shipping:

Inventory:3,701
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Product details
Overview
PD57006-E from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in the PowerSO-10RF (formed lead) package. It delivers 6 W output power with 15 dB gain at 945 MHz under 28 V supply and 70 mA quiescent drain current, featuring 5 °C/W junction-to-case thermal resistance and 65 V drain-source breakdown voltage. It is engineered for high-linearity, broadband commercial and industrial RF amplification up to 1 GHz, notably in car mobile radio transmitters.
For engineers reviewing the PD57006-E datasheet, PD57006-E pinout, PD57006-E application, or PD57006-E equivalent, key selection criteria include its 945 MHz small-signal gain of 15 dB, 6 W saturated RF output capability, 45–50% drain efficiency, 10:1 load mismatch tolerance, and compatibility with surface-mount assembly in PowerSO-10RF.
Technical Context
This LDMOST device operates in common-source configuration with fixed 28 V DC bias and 70 mA IDQ, optimized for Class AB linear amplification across 925–960 MHz bands. Its gate-source threshold voltage ranges 2.0–5.0 V, and it exhibits low input capacitance (CISS = 27 pF) and moderate output capacitance (COSS = 14 pF) at 28 V, enabling stable impedance matching.
The transistor integrates ST's proprietary LDMOS process for enhanced thermal stability and reliability, supported by the JEDEC-approved PowerSO-10RF plastic SMD package. Its s-parameters confirm strong forward gain (|S21| > 10 dB up to 1 GHz) and acceptable input return loss (|S11| < −10 dB at 945 MHz), suitable for broadband driver and final-stage amplifier designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 945 MHz | 6 W - saturated RF output power usable in mobile radio final stages without derating at TC = 70°C |
| Power Gain @ 945 MHz | 14–15 dB - enables single-stage amplification from low-level driver outputs to 6 W output |
| Drain Efficiency | 45–50% - reduces heat generation and DC power consumption in battery-sensitive or thermally constrained systems |
| V(BR)DSS | 65 V - provides 2.3× safety margin over 28 V operating rail, supporting transient voltage robustness |
| RthJC | 5 °C/W - allows direct heatsinking to PCB copper or external heatsink for continuous 20 W dissipation at case temperature ≤70°C |
| Load Mismatch Tolerance | 10:1 VSWR - maintains safe operation under antenna detuning or cable fault conditions without device failure |
| CISS / COSS | 27 pF / 14 pF @ 28 V - defines input/output impedance transformation requirements for broadband matching networks |
Pinout & Package
PD57006-E uses the PowerSO-10RF (formed lead) plastic SMD package - ST's first JEDEC-approved high-power RF SMD package, optimized for thermal performance and RF signal integrity. Dimensions: 9.5 mm × 14.1 mm × 3.5 mm (L × E × A2), with gull-wing leads and exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts DC bias and RF input signal; requires external gate resistor (100 Ω typical) and DC blocking capacitor per test circuit |
| Source (S) | Common reference node | Connected to RF ground plane; serves as return path for gate and drain currents; tied to heatsink via exposed pad |
| Drain (D) | Power output terminal | Delivers amplified RF output; electrically and thermally connected to large exposed metal pad on underside of package |
Key Features
| Feature | Design Value |
|---|---|
| PowerSO-10RF SMD package | JEDEC-qualified, thermally enhanced plastic RF package enabling automated reflow assembly and 20 W power dissipation |
| Linearity performance | Enables low-distortion amplification for FM/AM car radio transmitters meeting spectral mask and adjacent channel power requirements |
| Thermal stability | Stable gain and efficiency across −25°C to +100°C case temperature due to LDMOS process and low RthJC |
| High-frequency operation | Validated s-parameter data confirms usable gain up to 1.5 GHz, supporting 925–960 MHz cellular and land-mobile bands |
| Robustness under mismatch | Guaranteed survival at 10:1 VSWR across all phase angles at rated POUT, eliminating need for external circulators or limiters |
Applications
| Car Mobile Radio Transmitter | Land-Mobile Two-Way Radio |
|---|---|
Use Scenario: Final-stage RF power amplifier in 900 MHz band vehicular radios requiring compact, reliable, and thermally efficient design. IC Role / Device Role / Timing Role: Common-source N-channel RF power MOSFET delivering 6 W output with 15 dB gain and 45–50% drain efficiency. Use Value: Eliminates need for discrete heatsinks while maintaining linearity and thermal margin under continuous transmission duty cycles. |
Use Scenario: Base station repeater or portable radio PA stage operating in 925–960 MHz ISM or PMR bands. IC Role / Device Role / Timing Role: Linear broadband RF power amplifier biased at 28 V / 70 mA for Class AB operation. Use Value: Delivers consistent 6 W output across temperature and supply variation, with 10:1 VSWR survivability reducing system protection complexity. |
| UHF Public Safety Radio | Industrial Wireless Link Amplifier |
Use Scenario: Mission-critical UHF transmitter module where reliability, thermal resilience, and spectral purity are mandated. IC Role / Device Role / Timing Role: High-reliability lateral MOSFET providing stable RF gain and low intermodulation distortion in 945 MHz channel. Use Value: Meets stringent MIL-STD-810 thermal cycling and vibration requirements when mounted on reinforced FR4 with thermal vias. |
Use Scenario: Fixed wireless access point or sensor network gateway requiring cost-effective, surface-mountable RF PA. IC Role / Device Role / Timing Role: Final-stage amplifier driving directional antennas in unlicensed 902–928 MHz or 950 MHz industrial bands. Use Value: Enables full production using standard SMT lines without custom tooling, reducing BOM count and assembly cost vs. flange-mount alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2010NT1 | Higher POUT (10 W), GaN-on-SiC process, 50 V V(BR)DSS, requires more complex gate biasing and thermal management | Better suited for higher-efficiency base stations above 1 W average power; not drop-in compatible due to different pinout and bias scheme | Select when >8 W output or >60% efficiency is required; redesign of gate drive and thermal interface is mandatory |
| PD57003-E | Same PowerSO-10RF package, lower POUT (3 W), identical bias conditions (28 V / 70 mA), reduced gain (13 dB @ 945 MHz) | Direct footprint replacement for lower-power tiers; shares same layout, matching network, and thermal design | Choose for cost-sensitive or lower-power variants where 3 W suffices and board reuse is prioritized |
Compared with MRF6V2010NT1, PD57006-E offers simpler biasing and proven automotive-grade reliability at lower cost, while PD57003-E provides seamless scalability within the same platform-making PD57006-E optimal for 6 W mobile radio applications demanding balance of performance, manufacturability, and thermal robustness.
Availability
PD57006-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, land-mobile two-way radios, public safety UHF systems, and industrial wireless links requiring stable component supply and long-term production continuity.
Supply support for PD57006-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF devices for industrial, automotive, and consumer markets.
PD57006-E belongs to ST's LDMOST RF power transistor product line, developed specifically for high-linearity, surface-mountable RF amplification in commercial and industrial mobile radio infrastructure.
FAQ
What is the recommended gate bias voltage for PD57006-E in Class AB operation?
The datasheet specifies VGS(Q) = 2.0–5.0 V at IDQ = 70 mA and VDS = 28 V. For stable Class AB operation, a typical gate bias of 3.5 V is used with a 100 Ω series gate resistor and DC-blocking capacitor, as validated in the reference test circuit (Figure 23). This ensures repeatable quiescent current and minimizes thermal drift.
Can PD57006-E be used at frequencies outside the 925–960 MHz band?
Yes - s-parameter data confirms usable gain (>10 dB) up to 1.5 GHz, and impedance curves show stable ZIN/ZDL behavior from 50 MHz to 1.5 GHz. However, output power and efficiency degrade above 1 GHz; for 2.4 GHz applications, ST recommends the PD57018 family instead.
Is the PowerSO-10RF package RoHS-compliant and lead-free?
Yes - PD57006-E is supplied in an ECOPACK®-certified PowerSO-10RF package with lead-free second-level interconnect, compliant with JEDEC JESD97 and EU RoHS Directive 2011/65/EU. The inner box label indicates "Pb-free" and specifies maximum soldering profile limits.
How should the exposed drain pad be connected on the PCB?
The exposed drain pad must be soldered directly to a large, thermally optimized copper area on the PCB - minimum 200 mm² with ≥8 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to internal or back-side ground planes. Per AN1294, this achieves the specified 5 °C/W RthJC and prevents thermal runaway at full 6 W output.
PD57006-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 15dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1A
- Noise Figure:
- -
- Current - Test:
- 70 mA
- Power - Output:
- 6W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
PD57006-E FAQ
1.How can I place an order for PD57006-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57006-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57006-E reliable?
The price and inventory of PD57006-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57006-E is usually 5 days.
3.What payment methods are accepted for PD57006-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57006-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57006-E?
PD57006-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57006-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57006-E?
For technical support, including PD57006-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57006-E requirements.
6.How does Aetrix verify that PD57006-E is sourced from the original manufacturer or authorized distributors?
All PD57006-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57006-E meets industry standards.
7.What is the process for return or replacement of PD57006-E?
All PD57006-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57006-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57006-E part is unused and in its original packaging.
Return procedure for PD57006-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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