My Inquiry
My Account
STMicroelectronics PD57006S-E
.jpg)
- Part No.:
- PD57006S-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57006S-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:4,829
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD57006S-E from STMicroelectronics is a 6 W, N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF straight-lead package, operating at 28 V with 15 dB gain at 945 MHz in common-source configuration. It delivers 45–50% drain efficiency and supports 10:1 load mismatch tolerance, targeting mobile radio RF final-stage amplification.
For engineers reviewing the PD57006S-E datasheet, PD57006S-E pinout, PD57006S-E application, or PD57006S-E equivalent, key selection criteria include its 65 V V(BR)DSS rating, 5 °C/W RthJC thermal resistance, 6 W POUT capability at 945 MHz, and compatibility with 28 V DC supply and broadband 925–960 MHz operation.
Technical Context
This LDMOS device operates in common-source mode with fixed 70 mA quiescent drain current (IDQ), optimized for Class AB linear amplification up to 1 GHz. Its gate threshold voltage (VGS(Q)) ranges 2.0–5.0 V, and transconductance (gFS) is 0.58 mho at VDS = 10 V, ID = 800 mA.
Impedance data confirms matched input (ZIN ≈ 4.04 – j2.30 Ω at 945 MHz) and output (ZDL ≈ 3.86 + j10.58 Ω at 945 MHz) networks for 50 Ω systems. S-parameters at VDS = 28 V, IDS = 0.2 A show |S21| = 1.69 @ 950 MHz (≈ 4.6 dB gain) and |S11| = 0.892 @ 950 MHz (−70° phase), supporting stable broadband matching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 65 V - Maximum drain-source blocking voltage; enables safe operation under 28 V supply with transient margin. |
| POUT @ 945 MHz | 6 W - RF output power at 945 MHz with 28 V supply and 70 mA bias; sufficient for UHF mobile radio final stage. |
| Gain @ 945 MHz | 14–15 dB - Small-signal power gain; determines driver stage sizing and system noise figure contribution. |
| Drain Efficiency | 45–50% - Ratio of RF output power to DC input power; reduces thermal load and improves battery life in portable radios. |
| RthJC | 5 °C/W - Junction-to-case thermal resistance; mandates direct heatsinking to maintain TJ ≤ 165 °C at full 20 W dissipation. |
| Load Mismatch Tolerance | 10:1 VSWR - Withstands extreme antenna impedance variations without damage or gain collapse; critical for mobile antenna environments. |
| CISS / COSS / CRSS | 27 pF / 14 pF / 0.9 pF - Input/output/reverse transfer capacitances at 28 V; define matching network complexity and stability margins. |
Pinout & Package
PD57006S-E uses the PowerSO-10RF straight-lead plastic package - JEDEC-approved, surface-mountable, and optimized for RF thermal and electrical performance. Dimensions: 9.5 mm × 15.4 mm × 3.5 mm (L × E × A2), with 10 terminals formed as straight leads for through-hole or press-fit assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Source | Common low-impedance return path; electrically and thermally tied to exposed die paddle (pin 9/10); requires PCB copper pour for heat dissipation. |
| 9 | Drain | Main high-power RF output node; connected directly to RF output matching network and heatsink via metalized pad. |
| 10 | Gate | High-impedance RF input node; requires controlled-impedance trace and DC blocking; sensitive to ESD and layout parasitics. |
Key Features
| Feature | Design Value |
|---|---|
| PowerSO-10RF straight-lead package | First ST JEDEC-approved high-power SMD RF package; enables automated assembly while maintaining 20 W thermal capability and low-inductance source connection. |
| Excellent thermal stability | 165 °C max junction temperature and 5 °C/W RthJC allow sustained 6 W RF output without derating below +70 °C case temperature. |
| Superior linearity | Measured intermodulation distortion < −30 dBc under two-tone test at 945 MHz; meets spectral mask requirements for analog FM car radio transmitters. |
| Common-source configuration | Single-ended topology with grounded source simplifies biasing and matching; eliminates need for baluns or differential drivers in cost-sensitive designs. |
| LDMOST plastic family | ST's proprietary lateral DMOS process delivers ruggedness against load mismatch and improved gain flatness across 925–960 MHz band vs. vertical MOSFETs. |
Applications
| Land Mobile Radio Transmitter | UHF Public Safety Base Station |
|---|---|
|
Use Scenario: Final RF power amplifier in vehicle-mounted FM transceivers operating at 945 MHz. IC Role / Device Role / Timing Role: High-efficiency, linear Class AB RF power stage delivering 6 W into 50 Ω load with minimal adjacent-channel interference. Use Value: 45–50% drain efficiency extends battery runtime; 10:1 VSWR tolerance ensures reliable operation with whip antennas under vibration and environmental stress. |
Use Scenario: Driver or final amplifier in fixed-site UHF repeaters for emergency response networks (e.g., TETRA, P25). IC Role / Device Role / Timing Role: Broadband RF power device supporting 925–960 MHz band with stable gain and low IMD across temperature. Use Value: 15 dB small-signal gain reduces driver stage count; PowerSO-10RF package allows compact, convection-cooled heatsink integration in sealed enclosures. |
| Commercial Two-Way Radio | Industrial Wireless Link Amplifier |
|
Use Scenario: Output stage in handheld or portable two-way radios used in logistics, construction, and security sectors. IC Role / Device Role / Timing Role: Linear RF power transistor biased at 70 mA IDQ, delivering 6 W POUT with 14–15 dB gain at 945 MHz. Use Value: Low VGS(Q) range (2.0–5.0 V) simplifies gate drive design; robust 65 V V(BR)DSS withstands supply transients in unregulated 24 V vehicle systems. |
Use Scenario: Medium-power amplifier in industrial telemetry links (e.g., SCADA, remote sensor backhaul) operating near 950 MHz. IC Role / Device Role / Timing Role: Fixed-gain RF power block providing stable 6 W output with minimal external components due to integrated source grounding. Use Value: 5 °C/W RthJC enables passive cooling on 2 oz copper PCB; CISS/COSS values support simple L-C matching networks without harmonic traps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2010N | 10 W POUT @ 945 MHz, higher V(BR)DSS = 100 V, TO-270 WB-4 package (larger footprint, higher RthJC = 7.5 °C/W) | Supports higher output power and wider supply range (up to 32 V), but requires larger heatsink and more complex matching. | Select when >6 W output or >28 V supply is required; not drop-in due to different pinout and thermal interface. |
| PD57003S-E | 3 W POUT @ 945 MHz, same PowerSO-10RF straight-lead package, identical pinout and bias conditions (IDQ = 70 mA) | Lower power grade with reduced gain (13 dB) and efficiency (40–45%), suitable for lower-tier radios or driver stages. | Drop-in replacement for reduced power/thermal budget; shares layout, heatsink, and bias network - ideal for scalable platform design. |
Compared with MRF6V2010N, PD57006S-E offers lower thermal resistance and smaller footprint for 6 W systems; compared with PD57003S-E, it doubles output power while retaining identical board space and bias architecture - enabling modular RF power scaling.
Availability
PD57006S-E is available at Aetrix Electronics and suitable for land mobile radio transmitters, UHF public safety base stations, commercial two-way radios, and industrial wireless link amplifiers requiring stable component supply and long-term production continuity.
Supply support for PD57006S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
PD57006S-E belongs to ST's LDMOST plastic RF power transistor family, engineered specifically for high-linearity, high-efficiency UHF amplification in cost-sensitive mobile and infrastructure radio equipment.
FAQ
What is the maximum continuous drain current for PD57006S-E?
The absolute maximum continuous drain current (ID) is 1 A at TCASE = 25 °C, per Table 1. However, typical operating IDQ is 70 mA for linear RF amplification. Sustained 1 A operation exceeds thermal limits unless actively cooled below 25 °C case temperature - not recommended for RF power use.
Can PD57006S-E be used at frequencies above 1 GHz?
No - the datasheet specifies operation "up to 1 GHz" with verified performance only through 960 MHz. At 1000 MHz, |S21| drops to 1.32 (≈ 2.4 dB gain) and efficiency declines sharply; gain flatness and IMD performance are not characterized beyond 960 MHz.
Is the PowerSO-10RF straight-lead package RoHS-compliant?
Yes - PD57006S-E is supplied in an ECOPACK®-compliant PowerSO-10RF package with lead-free second-level interconnect, certified per JEDEC JESD97 and marked accordingly on packaging. The die attach and mold compound meet EU RoHS Directive 2011/65/EU.
How does PD57006S-E differ from PD57006-E?
Both share identical die and electrical specs, but PD57006S-E uses straight leads for through-hole or press-fit mounting, whereas PD57006-E uses gull-wing formed leads for surface-mount reflow. Mechanical dimensions differ slightly (E = 15.4 mm vs. 14.1 mm), requiring separate PCB footprints and assembly processes.
PD57006S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 15dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1A
- Noise Figure:
- -
- Current - Test:
- 70 mA
- Power - Output:
- 6W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD57006S-E FAQ
1.How can I place an order for PD57006S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57006S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57006S-E reliable?
The price and inventory of PD57006S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57006S-E is usually 5 days.
3.What payment methods are accepted for PD57006S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57006S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57006S-E?
PD57006S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57006S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57006S-E?
For technical support, including PD57006S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57006S-E requirements.
6.How does Aetrix verify that PD57006S-E is sourced from the original manufacturer or authorized distributors?
All PD57006S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57006S-E meets industry standards.
7.What is the process for return or replacement of PD57006S-E?
All PD57006S-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57006S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57006S-E part is unused and in its original packaging.
Return procedure for PD57006S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD57006S-E Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
