STMicroelectronics PD57006TR-E

Overview

PD57006TR-E from STMicroelectronics is a 6 W, 945 MHz N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration with 15 dB small-signal gain and 50% drain efficiency. It delivers robust RF performance for mobile radio transmitters requiring high linearity and thermal stability up to 1 GHz.

For engineers reviewing the PD57006TR-E datasheet, PD57006TR-E pinout, PD57006TR-E application, or PD57006TR-E equivalent, this device is selected for 900 MHz band RF power amplification where gain flatness, load mismatch tolerance (10:1 VSWR), and SMD manufacturability in high-power RF are critical design requirements.

Technical Context

This LDMOS transistor uses ST's proprietary lateral MOSFET process optimized for RF power, featuring low gate charge (CISS = 27 pF), high transconductance (gFS = 0.58 mho), and excellent thermal resistance (RthJC = 5 °C/W). Its common-source topology supports broadband matching from 925–960 MHz with stable S-parameters under 28 V/70 mA bias.

The PowerSO-10RF package integrates exposed drain paddle for thermal management and JEDEC-approved SMD footprint, enabling direct PCB mounting without heatsink clips. Pin layout separates gate, source, and drain terminals to minimize parasitic inductance and support microstrip-based impedance matching networks.

Key Specifications

Pinout & Package

PD57006TR-E uses the PowerSO-10RF (formed lead) plastic package - a JEDEC-approved, high-power SMD RF package with exposed drain paddle for thermal conduction and gull-wing leads for reflow compatibility. Dimensions: 9.5 mm × 14.1 mm × 3.5 mm (L × E × A2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD57006S-E, PD57006TR-E offers superior SMT process compatibility and reel-fed automation; versus MRF6V2010NT1, it provides proven thermal reliability at 28 V with simpler biasing-critical for cost-sensitive mobile radio designs.

Availability

PD57006TR-E is available at Aetrix Electronics and suitable for FM car radio transmitters, land mobile radio base stations, UHF public safety radios, and industrial wireless sensor gateways requiring stable component supply and full traceability.

Supply support for PD57006TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and RF solutions for industrial, automotive, and consumer markets.

PD57006TR-E belongs to ST's PowerSO-10RF LDMOS RF transistor family, engineered specifically for high-efficiency, thermally robust, surface-mountable RF power amplification in 800–1000 MHz commercial and industrial transmitters.

FAQ

What is the recommended gate bias voltage for PD57006TR-E in Class AB operation?

The datasheet specifies VGS(Q) = 2.0–5.0 V at ID = 70 mA and VDS = 28 V. For optimal linearity and efficiency, ST recommends setting gate bias to achieve 70 mA quiescent drain current, typically using a resistive divider or active current source that maintains stability across temperature. Application note AN1294 details bias network design including thermal compensation.

Can PD57006TR-E be used at frequencies outside the 925–960 MHz band?

Yes - the device operates up to 1 GHz with usable gain and efficiency, though POUT and GP degrade above 960 MHz. At 1 GHz, typical gain drops to ~13 dB and output power to ~5 W under same bias conditions. Impedance matching must be re-optimized per frequency, referencing ZIN/ZDL data in Table 5 for accurate network synthesis.

Is the PowerSO-10RF package RoHS compliant and lead-free?

Yes - PD57006TR-E is supplied in ECOPACK®-compliant PowerSO-10RF packaging with lead-free second-level interconnects, certified per JEDEC JESD97. The inner box label indicates "Pb-free" and specifies maximum soldering profile limits (e.g., peak reflow temperature ≤ 260°C for 10 s), fully aligned with RoHS Directive 2011/65/EU.

How does PD57006TR-E handle load mismatch during transmission?

It withstands 10:1 VSWR across all phase angles at rated POUT = 6 W without degradation or failure, verified per test condition in Table 4. This is enabled by LDMOS intrinsic ruggedness, low CRSS (0.9 pF), and thermal design margin - eliminating need for external protection circuits in mobile radio front-ends where antenna detuning is common.