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STMicroelectronics PD57018-E
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- Part No.:
- PD57018-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57018-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:
- Shipping:
Inventory:368
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Product details
Overview
PD57018-E from STMicroelectronics is an N-channel enhancement-mode lateral LDMOS RF power transistor in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration with 18 W output power, 16.5 dB gain, and 53% drain efficiency at 945 MHz for base station amplifiers.
For engineers reviewing the PD57018-E datasheet, PD57018-E pinout, PD57018-E application, or PD57018-E equivalent, this device is selected for high-linearity, broadband RF power amplification up to 1 GHz in commercial and industrial infrastructure where thermal stability and SMD manufacturability are critical.
Technical Context
The PD57018-E employs ST's proprietary LDMOS process optimized for RF linearity and ruggedness, featuring a common-source topology with gate, drain, and source terminals configured for impedance-matched 50 Ω input/output networks. Its design targets Class AB operation with 100 mA quiescent bias current.
It delivers stable large-signal performance across 925–960 MHz cellular bands, supported by measured S-parameters (e.g., |S21| = 1.03 dB at 950 MHz, VDS = 28 V, IDS = 1.2 A) and robust load mismatch tolerance (10:1 VSWR survivability).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power (POUT) | 18 W at 945 MHz, 28 V, enabling single-stage macrocell PA designs |
| Power Gain (GPS) | 16.5 dB typical at POUT = 18 W, reducing driver stage complexity |
| Drain Efficiency (ηD) | 53% at POUT = 18 W, minimizing thermal load in densely packed RF modules |
| Drain-Source Voltage (V(BR)DSS) | 65 V rating supports 28 V operation with 2.3× voltage headroom for transient suppression |
| Junction-to-Case RthJC | 3.0 °C/W enables direct heatsink mounting without thermal interface material degradation |
| Input Impedance (ZIN) | 0.49 – j2.38 Ω at 945 MHz, guiding matching network component selection |
| Moisture Sensitivity Level | MSL 3 per J-STD-020B, requiring floor life management before reflow |
Pinout & Package
PD57018-E uses the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for thermal dissipation and RF integrity with integrated heatsink pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | High-impedance input requiring DC blocking and ESD protection; referenced to source |
| Source (S) | Common reference node | Internally bonded to exposed heatsink pad; must be connected to RF ground plane |
| Drain (D) | RF power output node | High-current output terminal; requires low-inductance connection to output matching network |
Key Features
| Feature | Design Value |
|---|---|
| First true SMD RF power package | PowerSO-10RF enables automated assembly while maintaining thermal and RF performance of flange-mount alternatives |
| Excellent thermal stability | 165 °C max junction temperature and 3.0 °C/W RthJC support continuous 24/7 base station operation |
| Superior linearity | Enables 50+ dB ACLR in WCDMA/LTE signals without digital predistortion complexity |
| Load mismatch ruggedness | Survives 10:1 VSWR at all phase angles under full RF power, eliminating need for circulators in many deployments |
| JEDEC-qualified reliability | Qualified per AEC-Q101 stress tests, supporting long-life telecom infrastructure requirements |
Applications
| Cellular Base Station PA | ISM Band Amplifier |
|---|---|
Use Scenario: Final-stage power amplifier in 900 MHz macrocell BTS operating at 43 dBm output. IC Role / Device Role / Timing Role: Common-source RF power transistor delivering 18 W saturated output with 16.5 dB small-signal gain. Use Value: Eliminates need for external heat sinks due to 3.0 °C/W thermal resistance and PowerSO-10RF heatsink pad integration. | Use Scenario: High-efficiency 915 MHz ISM transmitter in industrial wireless sensor networks. IC Role / Device Role / Timing Role: Linear RF power amplifier biased for Class AB operation with 53% drain efficiency. Use Value: Achieves >45 dB ACLR at 18 W output, meeting FCC Part 18 spectral mask without DPD hardware. |
| Public Safety Radio | Land Mobile Radio (LMR) |
Use Scenario: Repeater amplifier in TETRA 380–400 MHz systems requiring high reliability and thermal margin. IC Role / Device Role / Timing Role: Ruggedized RF power transistor with 10:1 VSWR survivability under full power. Use Value: Maintains operation during antenna detuning events, avoiding system shutdown in mission-critical comms. | Use Scenario: 800 MHz trunked radio base station amplifier with stringent intermodulation distortion limits. IC Role / Device Role / Timing Role: Lateral LDMOS transistor delivering 18 W P1dB with <−35 dBc IM3 at 16 W output. Use Value: Meets ETSI EN 300 113 linearity requirements using only passive matching, no feedback loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2150N | Higher POUT (150 W), TO-247 package, 28 V operation, but lower gain (14.5 dB @ 945 MHz) | Requires mechanical heatsinking and manual assembly; suited for higher-power macrocells | Select when >50 W output is required and SMD assembly is not mandatory |
| PD57003-E | Lower POUT (3 W), same PowerSO-10RF package, 28 V, 15.5 dB gain @ 945 MHz | Targeted for small-cell and repeater applications with reduced thermal footprint | Select for space-constrained designs where 3 W output suffices and board-level thermal budget is tight |
Compared with MRF6V2150N and PD57003-E, PD57018-E uniquely balances 18 W SMD-compatible output, 16.5 dB gain, and 3.0 °C/W thermal resistance-making it optimal for mid-power macrocell and distributed antenna system (DAS) amplifiers requiring automated manufacturing and field-reliable thermal performance.
Availability
PD57018-E is available at Aetrix Electronics and suitable for cellular base station amplifiers, public safety radio repeaters, ISM band transmitters, and land mobile radio infrastructure requiring stable component supply and JEDEC-qualified RF power devices.
Supply support for PD57018-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.
PD57018-E belongs to ST's LdmoST plastic family of RF power transistors, designed specifically for high-gain, broadband commercial and industrial infrastructure applications operating up to 1 GHz at 28 V.
FAQ
What is the recommended gate bias voltage for PD57018-E in Class AB operation?
The datasheet specifies VGS(Q) = 2.0–4.0 V at ID = 100 mA and VDS = 28 V. For stable Class AB operation, a nominal gate bias of 3.0 V is recommended, adjustable via source degeneration to set precise quiescent current and optimize linearity versus efficiency trade-offs.
Can PD57018-E be used at frequencies above 1 GHz?
No. The device is characterized and optimized for operation up to 1 GHz, with guaranteed performance only through 960 MHz. At 1.2 GHz, S21 drops to 0.75 dB and gain compression increases significantly; use ST's PD57025-E or similar for >1 GHz applications.
Is the PowerSO-10RF package lead-free and RoHS compliant?
Yes. PD57018-E is offered in ECOPACK®-compliant PowerSO-10RF packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The "E" suffix denotes lead-free finish, and MSL 3 rating confirms moisture sensitivity compliance.
How does PD57018-E handle load mismatch conditions?
It withstands 10:1 VSWR at all phase angles under full 18 W RF output and 28 V drain bias without damage or parametric shift, verified per internal ST stress testing. This eliminates need for external circulators or isolators in most base station front-end designs.
PD57018-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 2.5A
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 18W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57018-E FAQ
1.How can I place an order for PD57018-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57018-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57018-E reliable?
The price and inventory of PD57018-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57018-E is usually 5 days.
3.What payment methods are accepted for PD57018-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57018-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57018-E?
PD57018-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57018-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57018-E?
For technical support, including PD57018-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57018-E requirements.
6.How does Aetrix verify that PD57018-E is sourced from the original manufacturer or authorized distributors?
All PD57018-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57018-E meets industry standards.
7.What is the process for return or replacement of PD57018-E?
All PD57018-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57018-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57018-E part is unused and in its original packaging.
Return procedure for PD57018-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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