STMicroelectronics PD57018S-E

Overview

PD57018S-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF (straight lead) package, designed for common-source broadband amplification up to 1 GHz at 28 V supply. It delivers 18 W output power with 16.5 dB gain and 53% drain efficiency at 945 MHz, optimized for base station infrastructure requiring high linearity and thermal stability.

For engineers reviewing the PD57018S-E datasheet, PD57018S-E pinout, PD57018S-E application, or PD57018S-E equivalent, key selection criteria include its 65 V V(BR)DSS rating, 3.0 °C/W junction-to-case thermal resistance, 34.5 pF input capacitance, load mismatch tolerance up to 10:1 VSWR, and SMD-compatible PowerSO-10RF mechanical footprint.

Technical Context

This device operates in common-source configuration with fixed 28 V drain bias and 100 mA quiescent current, supporting wideband amplification from 925–960 MHz. Its LDMOS architecture provides stable transconductance (1 mho) and low gate leakage (<1 μA), enabling robust Class AB operation in multi-carrier systems.

The PowerSO-10RF straight-lead package integrates a thermally enhanced copper leadframe and optimized RF grounding path, delivering measured S-parameters showing |S21| ≥ 1.03 dB and |S11| ≤ –10 dB across 925–960 MHz at 28 V/1.2 A bias - critical for impedance-matched PA stages in cellular infrastructure.

Key Specifications

Pinout & Package

PD57018S-E uses the PowerSO-10RF (straight lead) plastic package - ST's JEDEC-approved high-power SMD RF package with exposed drain paddle for thermal conduction and optimized RF grounding. Dimensions per Table 16: D = 9.4–9.6 mm width, E = 13.85–14.35 mm length, A2 = 3.4–3.6 mm height, with 10 leads in dual-row gull-wing configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD57018-E, the PD57018S-E offers identical RF performance with simplified SMT assembly, while the MRF6P20140HR5 serves higher-power, higher-frequency applications requiring complete board redesign - making PD57018S-E optimal for cost-sensitive 900 MHz macrocell upgrades.

Availability

PD57018S-E is available at Aetrix Electronics and suitable for macrocell base station PA, public safety radio amplifier, ISM band industrial heater driver, and UHF RFID reader exciter applications requiring stable component supply across multi-year production cycles.

Supply support for PD57018S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

PD57018S-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial base station amplifiers operating up to 1 GHz at 28 V.

FAQ

What is the maximum continuous drain current rating for PD57018S-E?

The absolute maximum continuous drain current (ID) is 2.5 A at TCASE = 25°C, as specified in Table 2. However, practical operation at 100 mA quiescent current (IDQ) is recommended for linear 18 W RF output; sustained DC current above 1.2 A requires active thermal management per Figure 6 Safe Operating Area.

Does PD57018S-E require external gate protection diodes?

No - the device incorporates integrated gate protection with ±20 V VGS rating and <1 μA IGSS leakage at 20 V, verified per Table 4. External TVS diodes are unnecessary unless operating in high-ESD environments exceeding IEC 61000-4-2 Level 4, where layout-level guarding is preferred over discrete components.

Can PD57018S-E be used in Class C or Doherty configurations?

Yes - its lateral LDMOS structure supports Class C operation up to 100% duty cycle, and measured S-parameters (Table 12–14) confirm stable harmonic termination capability. For Doherty applications, use with a dedicated peaking transistor (e.g., PD57020S-E) is validated in ST application note AN4225 for 900 MHz macrocell designs.

What is the moisture sensitivity level (MSL) for PD57018S-E?

PD57018S-E has MSL 3 per J-STD-020B (Table 6), requiring floor life of 168 hours at ≤30°C/60% RH. Bake condition is 125°C for 8 hours if exposed beyond floor life; reflow profile must comply with peak temperature ≤260°C for 10 seconds per PowerSO-10RF package specifications.