STMicroelectronics PD57018STR-E

Overview

PD57018STR-E from STMicroelectronics is an N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (straight lead) package, designed for 925–960 MHz base station amplifiers operating at 28 V. It delivers 18 W output power with 16.5 dB gain and 53% drain efficiency at 945 MHz, featuring excellent thermal stability and linearity for broadband commercial wireless infrastructure.

For engineers reviewing the PD57018STR-E datasheet, PD57018STR-E pinout, PD57018STR-E application, or PD57018STR-E equivalent, key selection criteria include its 65 V V(BR)DSS rating, 3.0 °C/W junction-to-case thermal resistance, 34.5 pF Ciss, common-source configuration, and compatibility with 10:1 load mismatch tolerance in high-reliability RF power stages.

Technical Context

This device employs ST's LDMOS technology optimized for RF power amplification up to 1 GHz in common-source topology. Its lateral structure enables superior gain flatness and intermodulation distortion performance across 925–960 MHz cellular bands under 28 V DC bias and 100 mA quiescent drain current.

The PowerSO-10RF straight-lead package integrates a thermally enhanced copper leadframe with RF-optimized internal layout, supporting high-power SMD assembly while maintaining low parasitic inductance and stable impedance matching-critical for maintaining >14 dB power gain and <−10 dB return loss across operating bandwidth.

Key Specifications

Pinout & Package

PD57018STR-E uses the PowerSO-10RF (straight lead) plastic package-a JEDEC-approved, high-power SMD RF package with integrated heatsink pad and optimized RF lead geometry for minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD57018S-E and PD57020STR-E, PD57018STR-E offers the optimal balance of 18 W output, 3.0 °C/W thermal resistance, and 0.45 W input drive compatibility-making it the preferred choice for cost-sensitive, thermally constrained 900 MHz macrocell PA designs.

Availability

PD57018STR-E is available at Aetrix Electronics and suitable for macrocell base station PA, public safety radio amplifiers, ISM band industrial heater drivers, and wireless infrastructure test equipment requiring stable component supply and long-term lifecycle support.

Supply support for PD57018STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

PD57018STR-E belongs to ST's LdmoST plastic family of RF power transistors-designed specifically for high-efficiency, high-linearity amplification in 700–1000 MHz wireless infrastructure applications.

FAQ

What is the maximum continuous drain current rating for PD57018STR-E?

The absolute maximum continuous drain current (ID) is 2.5 A at TCASE = 25°C, per Table 2 in the official datasheet. However, in practical RF amplifier operation at 28 V and 945 MHz, the device is typically biased at 100 mA IDQ for Class AB linear operation-ensuring optimal gain, efficiency, and linearity without exceeding thermal limits.

Does PD57018STR-E require external gate protection diodes?

No external gate protection diodes are required. The device specifies ±20 V maximum gate-source voltage (VGS) and exhibits <1 μA IGSS leakage at 20 V, indicating robust native oxide integrity. Its gate structure is designed for direct connection to standard RF driver stages with proper AC coupling and DC bias networks per AN1294 layout guidelines.

Can PD57018STR-E be used in Doherty amplifier configurations?

Yes-its high linearity (verified via IM3 and ACLR measurements), 10:1 load mismatch tolerance, and stable S-parameters up to 1.5 GHz make it suitable for Doherty main amplifier implementation in 900 MHz BTS. Matching networks must be designed per the ZIN/ZDL impedance data in Table 7 for 945 MHz center frequency.

What is the recommended PCB layout for thermal management of PD57018STR-E?

ST recommends a minimum 400 mm² copper pour (2 oz Cu) connected directly to the exposed drain pad via ≥8 thermal vias (0.3 mm diameter, filled or plated) to an internal ground plane. Layout must follow AN1294 guidelines: keep gate traces short and shielded, use solid RF ground beneath the package, and avoid slots under the PowerSO-10RF footprint to preserve thermal and RF return paths.