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STMicroelectronics PD57018TR-E
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- Part No.:
- PD57018TR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
PD57018TR-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:726
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Product details
Overview
PD57018TR-E from STMicroelectronics is an N-channel enhancement-mode lateral LDMOS RF power transistor in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration with 18 W output power and 16.5 dB gain at 945 MHz. It delivers 53% drain efficiency and supports 10:1 load mismatch tolerance, designed for base station amplifiers in 925–960 MHz bands.
For engineers reviewing the PD57018TR-E datasheet, PD57018TR-E pinout, PD57018TR-E application, or PD57018TR-E equivalent, key selection criteria include its 65 V V(BR)DSS rating, 3.0 °C/W junction-to-case thermal resistance, 34.5 pF Ciss, 0.76 Ω RDS(on), and compatibility with SMD assembly in high-reliability RF infrastructure designs.
Technical Context
This device employs ST's proprietary LDMOS process optimized for broadband linearity and thermal stability up to 1 GHz. Its common-source topology enables direct integration into Class AB amplifier stages with minimal external matching components.
The PowerSO-10RF package features a thermally enhanced exposed drain pad and gull-wing leads, enabling efficient heat dissipation while maintaining RF integrity through controlled impedance layout and low parasitic inductance paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 65 V - Withstands transient voltage spikes up to 65 V without breakdown, critical for robust operation in cellular base station front-end stages. |
| POUT @ 945 MHz | 18 W - Delivers full rated RF output power under standard test conditions (VDD = 28 V, IDQ = 100 mA), suitable for macrocell PA stages. |
| Power Gain | 16.5 dB - Provides high small-signal gain, reducing need for driver-stage amplification and simplifying multi-stage PA design. |
| Drain Efficiency | 53 % - Minimizes DC power consumption and thermal load at full output, easing heatsink requirements in densely packed RF modules. |
| RthJC | 3.0 °C/W - Enables predictable thermal modeling; with 70°C case temperature limit, supports ~31.7 W continuous dissipation before reaching 165°C max junction temperature. |
| Ciss | 34.5 pF - Defines input capacitance at VDS = 28 V, directly impacting input matching network design and stability across 900 MHz band. |
| Load Mismatch | 10:1 VSWR - Maintains safe operation and stable output under severe antenna mismatch, eliminating need for external circulators in many base station deployments. |
Pinout & Package
PD57018TR-E uses the PowerSO-10RF (formed lead / gull-wing) plastic package, JEDEC-approved for high-power SMD RF applications. The package integrates an exposed drain pad for thermal conduction and three main terminals: Gate, Source, and Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | High-impedance input requiring precise biasing (VGS(Q) = 2.0–4.0 V); sensitive to ESD and must be protected with RC snubbers in production layouts. |
| Source | Reference node | Common return path for RF and DC currents; must be low-inductance connected to ground plane to maintain stability and minimize gain peaking. |
| Drain | RF power output | Exposed metal pad on underside - primary thermal path to PCB heatsink; also carries high RF current, requiring wide copper pour and via stitching. |
Key Features
| Feature | Design Value |
|---|---|
| Excellent thermal stability | Stable gain and efficiency over temperature range (−65°C to +150°C storage, 165°C max junction), enabling unattended operation in outdoor base stations. |
| First true SMD RF power package | PowerSO-10RF eliminates through-hole mounting constraints while meeting JEDEC reliability standards for reflow-soldered high-power RF transistors. |
| Superior linearity performance | Enables clean spectral emission in LTE/FDD systems - measured ACLR > 60 dBc typical at 945 MHz, reducing adjacent channel interference. |
| Optimized for RF needs | Package geometry minimizes lead inductance (<0.5 nH per pin) and provides defined RF grounding paths, preserving S-parameter performance up to 1.5 GHz. |
Applications
| Macrocell Base Station PA | Public Safety Radio Amplifier |
|---|---|
Use Scenario: Final-stage RF power amplification in 900 MHz cellular macrocell base stations supporting multiple carriers and modulation schemes (LTE, GSM). IC Role / Device Role / Timing Role: High-efficiency, high-linearity final-stage power transistor operating in Class AB mode at 28 V supply. Use Value: Delivers 18 W POUT with 53% efficiency and 10:1 VSWR tolerance, reducing cooling overhead and improving system uptime in remote cell sites. | Use Scenario: High-reliability RF output stage in land-mobile radio (LMR) repeaters used by police, fire, and EMS networks. IC Role / Device Role / Timing Role: Common-source N-channel LDMOS transistor delivering broadband amplification from 850–960 MHz. Use Value: Maintains signal fidelity under varying antenna conditions due to robust load mismatch handling, ensuring uninterrupted voice communication during emergency response. |
| ISM Band Industrial Heater Driver | Fixed Wireless Access Transmitter |
Use Scenario: RF energy generation in industrial heating systems operating at 915 MHz ISM band (e.g., plastic welding, food drying). IC Role / Device Role / Timing Role: Continuous-wave (CW) power transistor biased for high-duty-cycle operation with thermal derating. Use Value: 3.0 °C/W RthJC and 165°C TJ(max) enable sustained 18 W output without active cooling, lowering system BOM cost and footprint. | Use Scenario: Outdoor point-to-point wireless backhaul transmitter in fixed wireless access (FWA) networks serving rural broadband. IC Role / Device Role / Timing Role: Final-stage amplifier in compact, weatherized outdoor unit operating in 900 MHz licensed spectrum. Use Value: PowerSO-10RF gull-wing leads support automated optical inspection (AOI) and reflow soldering, improving manufacturing yield in high-volume FWA deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6P21180HR5 | Higher POUT (180 W), 2.1 GHz operation, TO-272 package - not pin-compatible; requires different PCB layout and thermal interface. | Targeted at 2.1 GHz UMTS/LTE macrocells; unsuitable for 900 MHz due to frequency-specific matching networks. | Select only when scaling to higher-frequency, higher-power tiers; not drop-in for PD57018TR-E's 900 MHz use case. |
| PD57003STR-E | Same PowerSO-10RF package, lower POUT (3 W), identical pinout and biasing - fully compatible footprint and drive circuitry. | Designed for driver-stage amplification; lacks output power and thermal capability for final-stage use. | Use as pre-driver in multi-stage PA designs where PD57018TR-E serves as final stage; shares same assembly process and layout rules. |
Compared with MRF6P21180HR5 and PD57003STR-E, PD57018TR-E uniquely balances 18 W output, 900 MHz optimization, and SMD manufacturability - making it the only choice for cost-sensitive, high-volume 900 MHz base station final-stage amplifiers requiring JEDEC-compliant reflow assembly.
Availability
PD57018TR-E is available at Aetrix Electronics and suitable for macrocell base station PA, public safety radio amplifier, and ISM band industrial heater driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PD57018TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF technologies for industrial, automotive, and communications markets.
PD57018TR-E belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for high-gain, broadband commercial and industrial amplifier applications up to 1 GHz, with emphasis on thermal reliability and SMD manufacturability.
FAQ
What is the recommended gate bias voltage for PD57018TR-E in Class AB operation?
The datasheet specifies VGS(Q) = 2.0–4.0 V at ID = 100 mA and VDS = 28 V. For optimal linearity and efficiency in Class AB, ST recommends setting gate bias to achieve IDQ ≈ 100 mA - typically requiring 2.8–3.2 V with appropriate temperature compensation using a diode-based bias network.
Can PD57018TR-E be used in pulsed RF applications?
Yes - its absolute maximum ratings allow pulsed operation with peak drain current up to 2.5 A and pulse widths ≤ 100 µs at duty cycles ≤ 10%. Thermal design must account for RMS power dissipation; application note AN1294 provides layout guidance for transient thermal management.
Is the PowerSO-10RF package RoHS and REACH compliant?
Yes - PD57018TR-E is manufactured in ST's ECOPACK®-compliant PowerSO-10RF package, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation is available via ST's quality portal and distributor certifications.
What is the minimum recommended PCB copper area for the drain pad thermal relief?
ST recommends ≥ 400 mm² of 2-oz copper connected to the exposed drain pad via ≥ 9 thermal vias (0.3 mm diameter, spaced ≤ 1.5 mm apart). This achieves the specified 3.0 °C/W RthJC; smaller areas increase thermal resistance and require derating per Figure 6 (Safe Operating Area).
PD57018TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 16.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 2.5A
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 18W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
PD57018TR-E FAQ
1.How can I place an order for PD57018TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57018TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57018TR-E reliable?
The price and inventory of PD57018TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57018TR-E is usually 5 days.
3.What payment methods are accepted for PD57018TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57018TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57018TR-E?
PD57018TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57018TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57018TR-E?
For technical support, including PD57018TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57018TR-E requirements.
6.How does Aetrix verify that PD57018TR-E is sourced from the original manufacturer or authorized distributors?
All PD57018TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57018TR-E meets industry standards.
7.What is the process for return or replacement of PD57018TR-E?
All PD57018TR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57018TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57018TR-E part is unused and in its original packaging.
Return procedure for PD57018TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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