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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single FETs, MOSFETs

STMicroelectronics PD57030-E

Name: PD57030-E
Brand: STMicroelectronics
SKU: PD57030-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PD57030-E

Manufacturer:: STMicroelectronics

Category:: Single FETs, MOSFETs

Package:: PowerSO-10 Exposed Bottom Pad

Datasheet:: PD57030-E.pdf

Description:: RF MOSFET LDMOS 28V POWERSO10

Quantity:: RFQ Add To RFQ list

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Inventory:457

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Product details

Overview

PD57030-E from STMicroelectronics is a 30 W N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF package, operating at 28 V with 14 dB gain and 53% efficiency at 945 MHz in common-source configuration. It delivers broadband performance up to 1 GHz and is optimized for base station amplifiers requiring high linearity and thermal stability.

For engineers reviewing the PD57030-E datasheet, PD57030-E pinout, PD57030-E application, or PD57030-E equivalent, this device is selected for high-power RF final-stage amplification where POUT ≥30 W, gain ≥13 dB, and load mismatch tolerance up to 10:1 VSWR are required at 900–1000 MHz bands.

Technical Context

This LDMOS transistor uses lateral structure for improved thermal stability and linearity over vertical MOSFETs. Its gate threshold voltage (2.0–5.0 V) and low input capacitance (CISS = 57 pF) support stable biasing and broadband matching up to 1 GHz.

The device operates in common-source mode with fixed 50 mA quiescent drain current and exhibits 1.8 mho transconductance. Its junction-to-case thermal resistance of 1.8 °C/W enables high-power operation when mounted on thermally optimized PCBs per AN1294.

Key Specifications

Parameter	Value and Actual Design Meaning
POUT @ 945 MHz	30 W - Sustained RF output power under standard test conditions (VDS = 28 V, IDQ = 50 mA)
Power Gain	14 dB - Small-signal gain enabling single-stage amplification in 900 MHz base station front ends
Drain Efficiency	53% - DC-to-RF conversion efficiency reducing heat dissipation and supply current demand
V(BR)DSS	65 V - Maximum drain-source breakdown voltage allowing safe operation with 28 V rail and transient margin
RthJC	1.8 °C/W - Thermal resistance enabling 52.8 W power dissipation at 70°C case temperature
Load Mismatch	10:1 VSWR - Tolerance to antenna impedance variations without device damage or gain collapse
CISS	57 pF - Input capacitance defining matching network component values and bandwidth limits

Pinout & Package

PD57030-E is housed in PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring integrated heatsink pad and optimized RF layout for minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Gate	Control electrode	Accepts DC bias and RF drive signal; requires external gate resistor for stability and ESD protection
Source	Common reference node	Connected to RF ground plane; serves as return path for both DC bias and RF current
Drain	Power output terminal	Delivers amplified RF signal to output matching network; bonded to exposed heatsink pad for thermal conduction

Key Features

Feature	Design Value
Common-source configuration	Enables standard Class AB amplifier design with simplified biasing and proven stability across 900–1000 MHz band
Excellent thermal stability	Stable gain and output power over temperature due to lateral LDMOS architecture and low RthJC
Superior linearity	Supports multi-carrier GSM/UMTS signals with low ACPR, critical for cellular base station compliance
First true SMD RF power package	PowerSO-10RF eliminates through-hole assembly while maintaining thermal and RF performance of flange-mount devices

Applications

Macro Base Station Transmitter

Public Safety Radio Amplifier

Use Scenario: Final-stage RF power amplification in 900 MHz cellular macro base stations supporting multi-carrier UMTS/GSM.

IC Role / Device Role / Timing Role: High-efficiency, high-linearity RF power transistor operating in Class AB common-source mode.

Use Value: Delivers 30 W output with 14 dB gain and 10:1 VSWR tolerance, reducing need for circulators and improving system reliability.

Use Scenario: High-reliability RF final stage in land-mobile radio systems used by emergency services.

IC Role / Device Role / Timing Role: N-channel LDMOS transistor providing robust amplification under variable antenna loads and wide ambient temperature range.

Use Value: Maintains linear output and thermal stability at 50 mA IDQ bias, meeting MIL-STD-810G environmental requirements for field-deployed radios.

ISM Band Industrial Heater Driver

Wireless Infrastructure Repeaters

Use Scenario: RF energy generation in 915 MHz industrial heating systems requiring continuous 30 W output.

IC Role / Device Role / Timing Role: High-power RF switch/amplifier operating at fixed frequency with high drain efficiency.

Use Value: 53% efficiency minimizes cooling requirements; 165°C max junction temperature supports sealed enclosure designs.

Use Scenario: Bidirectional amplification in in-building distributed antenna systems (DAS) covering 925–960 MHz bands.

IC Role / Device Role / Timing Role: Linear RF power transistor used in low-noise receive and high-power transmit paths.

Use Value: Low CRSS (2.3 pF) and high GP enable clean signal retransmission with minimal intermodulation distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MRF6P20140HR5	Higher POUT (140 W), higher V(BR)DSS (100 V), TO-270WB package with flange mount	Requires heatsink mounting and larger PCB area; suited for macro base station main PA, not compact repeaters	Select when >100 W output and legacy flange-mount infrastructure exist; not drop-in compatible
PD57018-E	Lower POUT (18 W), same PowerSO-10RF package, identical pinout and bias scheme	Designed for lower-power small cells and femtocells where thermal budget is constrained	Drop-in replacement for reduced power tiers; shares footprint, thermal design, and matching network topology

Compared with MRF6P20140HR5, PD57030-E offers compact SMD integration and lower system cost; compared with PD57018-E, it provides +12 W headroom for future-proofing and margin in base station upgrades.

Availability

PD57030-E is available at Aetrix Electronics and suitable for macro base station transmitters, public safety radio amplifiers, and ISM band industrial heater drivers requiring stable component supply and long-term lifecycle support.

Supply support for PD57030-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF solutions for industrial, automotive, and communications markets.

PD57030-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial wireless infrastructure applications up to 1 GHz.

FAQ

What is the recommended gate bias voltage for PD57030-E?

The typical gate-source voltage for 50 mA quiescent drain current is 3.5 V, with a specified range of 2.0–5.0 V. Stable biasing requires a low-impedance DC source and series gate resistor (typically 10–100 Ω) to suppress oscillation and provide ESD protection per AN1294 guidelines.

Can PD57030-E operate at frequencies above 1 GHz?

No - the device is characterized and guaranteed up to 1 GHz. At 960 MHz, it delivers 30 W output and 14 dB gain; performance degrades rapidly beyond 1 GHz due to decreasing gain and efficiency, as shown in Figures 5–8 of the datasheet.

Is PowerSO-10RF compatible with standard SMT reflow profiles?

Yes - PD57030-E has Moisture Sensitivity Level 3 and is qualified for IPC/JEDEC J-STD-020B reflow. Peak temperature must not exceed 260°C, and preheat ramp rate should be ≤3°C/s. Refer to ST's PowerSO-10RF mounting recommendations at www.st.com/rf/ for pad layout and stencil design.

Does PD57030-E require external matching networks?

Yes - the device exhibits complex input (ZIN = 0.809 – j0.085 Ω at 945 MHz) and output (ZDL = 2.46 + j0.492 Ω) impedances. Matching networks using surface-mount capacitors and inductors (e.g., C1–C16, L1–L2 in Figure 14) are mandatory to achieve rated POUT, gain, and efficiency.

PD57030-E Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: PowerSO-10 Exposed Bottom Pad

Packaging:: Tube

Product Status:: Active

Technology:: LDMOS

Configuration:: -

Frequency:: 945MHz

Gain:: 14dB

Voltage - Test:: 28 V

Current Rating (Amps):: 4A

Noise Figure:: -

Current - Test:: 50 mA

Power - Output:: 30W

Voltage - Rated:: 65 V

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: 10-PowerSO

PD57030-E FAQ

1.How can I place an order for PD57030-E through Aetrix?

Please submit a Request for Quotation (RFQ) for PD57030-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PD57030-E reliable?

The price and inventory of PD57030-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57030-E is usually 5 days.

3.What payment methods are accepted for PD57030-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57030-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PD57030-E?

PD57030-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PD57030-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PD57030-E?

For technical support, including PD57030-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57030-E requirements.

6.How does Aetrix verify that PD57030-E is sourced from the original manufacturer or authorized distributors?

All PD57030-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57030-E meets industry standards.

7.What is the process for return or replacement of PD57030-E?

All PD57030-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57030-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PD57030-E part is unused and in its original packaging.

Return procedure for PD57030-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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