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STMicroelectronics PD57030S
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- Part No.:
- PD57030S
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57030S.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:
- Shipping:
Inventory:5,079
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Product details
Overview
PD57030S from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 30 W output at 945 MHz with 14 dB gain and 53% drain efficiency at 28 V supply, optimized for base station amplifiers operating up to 1 GHz.
For engineers reviewing the PD57030S datasheet, PD57030S pinout, PD57030S application, or PD57030S equivalent, key selection criteria include its 65 V V(BR)DSS rating, 1.8 °C/W junction-to-case thermal resistance, PowerSO-10RF straight-lead package, and verified 10:1 load mismatch tolerance under full-power operation.
Technical Context
This device implements ST's LDMOS technology with lateral channel architecture to achieve high thermal stability and linearity across 925–960 MHz bands. Its gate threshold voltage (2.0–5.0 V) and transconductance (1.8 mho) support stable Class AB biasing at 50 mA quiescent current.
The PowerSO-10RF package integrates formed or straight leads with a copper leadframe and optimized die attach for low-inductance RF paths. Input impedance (e.g., 0.809 – j0.085 Ω at 945 MHz) and drain load impedance (2.46 + j0.492 Ω) are characterized for broadband matching networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 65 V - maximum drain-source breakdown voltage, enabling safe operation with 28 V supply and transient margin |
| POUT @ 945 MHz | 30 W - RF output power into matched load, supporting macro-cell base station PA stages |
| Gain @ 945 MHz | 14 dB - small-signal power gain, reducing driver stage complexity in multi-stage amplifiers |
| ηD @ 30 W | 53 % - drain efficiency at full output, minimizing heat generation and DC power draw |
| Rth(j-c) | 1.8 °C/W - thermal resistance from junction to case, requiring heatsink interface ≤ 0.5 °C/W for Tj ≤ 165 °C |
| Load Mismatch | 10:1 VSWR - withstands severe impedance mismatches without failure, critical for antenna coupling variations |
| CISS / COSS | 57 pF / 30 pF - input/output capacitances at 28 V, defining matching network component values and bandwidth limits |
Pinout & Package
PD57030S is housed in the PowerSO-10RF plastic package with straight leads, featuring exposed drain paddle for thermal management and optimized RF grounding via source terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GATE | Control electrode | Accepts DC bias and RF drive; requires external gate resistor (R1 = 18 kΩ) and DC blocking capacitor (C1/C8/C9/C13 = 47 pF) |
| SOURCE | Common reference node | Connected to RF ground plane and heatsink; multiple pins provide low-inductance return path for RF and DC currents |
| DRAIN | Power output node | High-current RF output terminal; soldered to exposed copper paddle for thermal conduction and RF shielding |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | Junction temperature coefficient of VGS(Q) ensures consistent bias point over −50 to +150 °C case range |
| RF reliability | JEDEC-qualified PowerSO-10RF package withstands reflow and mechanical stress while maintaining RF performance |
| Linearity | Verified intermodulation distortion (IMD) performance supports multi-carrier WCDMA signals in base stations |
| Matching flexibility | Published ZIN and ZDL data (e.g., 0.809 – j0.085 Ω / 2.46 + j0.492 Ω at 945 MHz) enable repeatable 50 Ω input/output matching |
Applications
| Cellular Base Station Transmitter | ISM Band Amplifier |
|---|---|
Use Scenario: Final-stage RF power amplifier in 900 MHz macro-cell BTS operating under varying ambient temperatures and antenna VSWR conditions. IC Role / Device Role / Timing Role: High-efficiency, high-linearity N-channel MOSFET delivering 30 W POUT in common-source configuration. Use Value: 53% drain efficiency reduces cooling requirements; 10:1 VSWR tolerance eliminates need for circulator protection. | Use Scenario: 915 MHz industrial heating or RFID reader PA where wideband gain flatness and thermal robustness are required. IC Role / Device Role / Timing Role: Broadband RF power transistor biased at 50 mA IDQ for Class AB operation across 900–960 MHz. Use Value: 14 dB gain minimizes driver stage count; PowerSO-10RF package enables automated SMT assembly without wire bonding. |
| Public Safety Radio Repeater | Wireless Infrastructure Test Equipment |
Use Scenario: Linear repeater PA in emergency communications systems requiring high reliability and low IMD under continuous duty. IC Role / Device Role / Timing Role: Lateral LDMOS transistor configured for high-fidelity signal amplification with minimal spectral regrowth. Use Value: Verified linearity performance supports narrowband FM and P25 waveforms without adjacent channel interference. | Use Scenario: Lab-grade RF signal generator output stage needing calibrated, repeatable 30 W output across 925–960 MHz. IC Role / Device Role / Timing Role: Bench-testable RF power device with documented ZIN/ZDL and thermal derating curves. Use Value: Published thermal resistance (1.8 °C/W) and junction temperature limit (165 °C) allow precise thermal modeling in test fixtures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2010N | Higher POUT (10 W @ 2.14 GHz), GaN-on-SiC, 50 V V(BR)DSS, Rth(j-c) = 1.5 °C/W | Targets higher-frequency 3G/4G infrastructure; requires different gate bias and thermal interface | Prefer for >1.5 GHz designs where GaN efficiency outweighs cost and layout changes |
| PD57015S | Lower POUT (15 W), same PowerSO-10RF package, identical pinout and bias scheme, 1.8 °C/W Rth(j-c) | Drop-in replacement for lower-power tiers in same base station platform | Select when system-level output requirement is ≤15 W and board layout reuse is mandatory |
Compared with MRF6V2010N, PD57030S offers proven LDMOS reliability at 900 MHz with simpler gate drive, while PD57015S provides exact footprint compatibility with reduced thermal load-both alternatives require validation of matching network recalibration.
Availability
PD57030S is available at Aetrix Electronics and suitable for cellular base station transmitters, ISM band amplifiers, public safety radio repeaters, and wireless infrastructure test equipment requiring stable component supply across multi-year production cycles.
Supply support for PD57030S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and RF devices for industrial, automotive, and communications markets.
PD57030S belongs to ST's LdmoST Plastic family of RF power transistors, engineered specifically for high-efficiency, high-reliability macro-cell and micro-cell base station amplifiers operating below 1 GHz.
FAQ
What is the recommended gate bias voltage for PD57030S in Class AB operation?
The datasheet specifies VGS(Q) = 2.0–5.0 V at ID = 50 mA and VDS = 28 V. For stable Class AB operation, a typical gate bias of 3.5 V is used with a 18 kΩ series resistor (R1) and bypass capacitor network to suppress oscillation and ensure thermal stability across temperature.
Can PD57030S be operated at 36 V drain supply?
No. The absolute maximum V(BR)DSS is 65 V, but the device is characterized and qualified only at 28 V. Operating above 28 V violates the specified test conditions for POUT, gain, and efficiency, and risks exceeding safe SOA limits due to increased power dissipation and thermal runaway risk.
Is the PowerSO-10RF package RoHS compliant?
Yes. STMicroelectronics confirms PowerSO-10RF packaging for PD57030S meets RoHS Directive 2011/65/EU, with lead-free terminations and halogen-free molding compound, verified per ST's official product change notifications and material declarations.
How does PD57030S handle load mismatch during transmission bursts?
PD57030S is tested and guaranteed to survive 10:1 VSWR at all phase angles under full 30 W output at 945 MHz. This is achieved through LDMOS channel design and package-level thermal robustness, eliminating need for external protection circuits in standard base station deployments.
PD57030S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 4A
- Noise Figure:
- -
- Current - Test:
- 50 mA
- Power - Output:
- 30W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57030S FAQ
1.How can I place an order for PD57030S through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57030S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57030S reliable?
The price and inventory of PD57030S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57030S is usually 5 days.
3.What payment methods are accepted for PD57030S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57030S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57030S?
PD57030S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57030S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57030S?
For technical support, including PD57030S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57030S requirements.
6.How does Aetrix verify that PD57030S is sourced from the original manufacturer or authorized distributors?
All PD57030S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57030S meets industry standards.
7.What is the process for return or replacement of PD57030S?
All PD57030S units undergo pre-shipment inspection (PSI). If there is an issue with PD57030S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57030S part is unused and in its original packaging.
Return procedure for PD57030S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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