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STMicroelectronics PD57045-E
- Part No.:
- PD57045-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57045-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:
- Shipping:
Inventory:8,594
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Product details
Overview
PD57045-E from STMicroelectronics is a 45 W N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration with 13 dB gain and 50% drain efficiency at 945 MHz - designed for base station power amplifiers in commercial wireless infrastructure.
For engineers reviewing the PD57045-E datasheet, PD57045-E pinout, PD57045-E application, or PD57045-E equivalent, this device requires attention to thermal resistance (1.2 °C/W), gate-source voltage range (±20 V), load mismatch tolerance (10:1 VSWR), and SMD RF assembly guidelines per AN1294.
Technical Context
This LDMOS transistor uses lateral structure for high linearity and thermal stability up to 165 °C junction temperature, supporting broadband operation from DC to 1 GHz in common-source mode. Its low input/output capacitance (CISS = 86 pF, COSS = 47 pF) and optimized impedance matching (ZIN = 0.69 + j2.92 Ω at 945 MHz) enable stable broadband amplifier design.
The device integrates ST's first JEDEC-approved high-power SMD RF plastic package (PowerSO-10RF), featuring formed leads for thermal and mechanical reliability. It delivers P1dB = 45 W with 13–14.5 dB small-signal gain and maintains safe operating area across case temperatures from –65 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power (P1dB) | 45 W at 945 MHz, 28 V, IDQ = 250 mA - defines maximum linear output before 1 dB compression in base station PA stages. |
| Power Gain | 13–14.5 dB at 945 MHz - enables single-stage amplification with minimal driver stage complexity. |
| Drain Efficiency | 50% at POUT = 45 W - reduces thermal load and improves system-level power budget in continuous-wave operation. |
| Junction-to-Case Rth | 1.2 °C/W - supports high-power dissipation with moderate heatsinking in compact SMD layouts. |
| V(BR)DSS | 65 V - provides 2.3× safety margin over 28 V supply, enabling robust operation under transient overvoltage. |
| Load Mismatch Tolerance | 10:1 VSWR at all phase angles - ensures amplifier survivability during antenna detuning or fault conditions. |
| Moisture Sensitivity Level | MSL 3 per J-STD-020B - requires floor life management and bake-before-reflow handling. |
Pinout & Package
PD57045-E is housed in PowerSO-10RF (formed lead) package - a JEDEC-qualified, thermally enhanced SMD plastic RF package with integrated heat slug and gull-wing leads optimized for RF performance and reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control terminal | Accepts ±20 V max bias; requires external gate resistor and ESD protection due to 1 µA IGSS leakage. |
| Source (S) | Common reference node | Connected to RF ground plane; forms return path for 5 A max drain current and carries high-frequency return currents. |
| Drain (D) | High-power output node | Delivers 45 W RF output; mounted directly to thermal pad on PCB for 1.2 °C/W junction-to-case conduction path. |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | 165 °C max junction temperature with 1.2 °C/W RthJC - enables sustained 45 W operation without derating below 70 °C case temperature. |
| Linearity performance | Low intermodulation distortion supported by 13 dB gain flatness and 10:1 VSWR tolerance - critical for multi-carrier LTE/WCDMA base station PAs. |
| RF-optimized packaging | PowerSO-10RF with formed leads and exposed thermal pad - achieves <0.5 nH parasitic inductance and >20 dB isolation between input/output paths. |
| DC blocking capability | V(BR)DSS = 65 V and IDSS = 1 µA at 28 V - ensures stable bias point and prevents channel leakage in Class AB operation. |
| Impedance match readiness | ZIN = 0.69 + j2.92 Ω and ZDL = 1.25 – j0.29 Ω at 945 MHz - simplifies matching network design using standard microstrip or lumped LC topologies. |
Applications
| Cellular Base Station Transmitter | Public Safety Radio Amplifier |
|---|---|
|
Use Scenario: Final-stage RF power amplifier in macrocell BTS operating at 945 MHz band with 20 MHz bandwidth. IC Role / Device Role / Timing Role: High-efficiency, high-linearity power gain block delivering 45 W P1dB into 50 Ω load with 13 dB small-signal gain. Use Value: Enables single-transistor final stage without cascaded drivers, reducing BOM count and insertion loss in 28 V distributed antenna systems. |
Use Scenario: Linear PA in land-mobile radio repeaters covering 800–900 MHz public safety bands. IC Role / Device Role / Timing Role: Common-source RF switch-mode amplifier supporting 25% duty-cycle pulsed operation with 10:1 VSWR survivability. Use Value: Maintains spectral mask compliance under antenna mismatch while sustaining 45 W peak output for emergency voice transmission. |
| ISM Band Industrial Heater Driver | Wireless Infrastructure Remote Radio Head |
|
Use Scenario: 915 MHz RF energy source in industrial plasma or dielectric heating systems requiring CW operation. IC Role / Device Role / Timing Role: Fixed-bias Class AB power stage delivering continuous 45 W into reactive loads with thermal derating down to 73 W PDISS. Use Value: Eliminates need for forced-air cooling via 1.2 °C/W thermal resistance, enabling sealed enclosure designs for harsh factory environments. |
Use Scenario: Compact, low-profile PA module in RRH units deployed on cell towers with strict SWaP constraints. IC Role / Device Role / Timing Role: SMD-mountable RF power transistor enabling direct integration onto multilayer Rogers PCB with embedded thermal vias. Use Value: Reduces module footprint by 40% vs. flange-mount alternatives while maintaining 50% drain efficiency and 13 dB gain at 945 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PD57045S-E | Same die, straight-lead variant of PowerSO-10RF package - identical electrical specs but different lead form factor. | Requires modified stencil and placement tooling; better suited for wave solder or selective reflow processes. | Select when board assembly uses straight-lead compatibility or legacy pick-and-place calibration. |
| MRF6V2150N | 150 W GaN HEMT (1.8–2.2 GHz), higher gain (16 dB), higher VDS rating (65 V), but RthJC = 1.5 °C/W. | Targeted at higher-frequency 2.1 GHz LTE bands; not drop-in compatible due to different bias requirements and layout. | Choose only when upgrading to GaN for higher frequency or power density - requires full redesign of matching network and thermal interface. |
Compared with PD57045S-E, the PD57045-E offers identical RF performance with gull-wing leads for improved reflow coplanarity; versus MRF6V2150N, it trades bandwidth and peak power for proven LDMOS reliability, lower gate charge, and simpler biasing at 945 MHz.
Availability
PD57045-E is available at Aetrix Electronics and suitable for cellular base station transmitters, public safety radio amplifiers, ISM band industrial heaters, and remote radio head modules requiring stable component supply and long-lifecycle support.
Supply support for PD57045-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.
PD57045-E belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for cost-effective, high-reliability SMD deployment in commercial wireless infrastructure where thermal stability and broadband linearity are critical.
FAQ
What is the maximum continuous drain current for PD57045-E?
The absolute maximum drain current is 5 A at TCASE = 25 °C, but practical continuous operation is limited by thermal dissipation. At 70 °C case temperature, the device supports 73 W power dissipation, corresponding to ~2.6 A RMS drain current under typical Class AB RF conditions at 945 MHz.
Does PD57045-E require external gate protection?
Yes - although VGS rating is ±20 V, the gate oxide is sensitive to ESD and transient overvoltage. ST recommends series gate resistors (e.g., 10–100 Ω) and parallel TVS diodes rated ≤20 V to limit gate-source voltage excursions during hot insertion or RF feedback events.
Can PD57045-E be used at frequencies above 1 GHz?
No - the datasheet specifies operation "up to 1 GHz" with verified performance at 945 MHz. At 1.2 GHz, gain drops to ~11 dB and P1dB falls below 35 W; impedance matching becomes increasingly narrowband, and thermal derating accelerates beyond 1 GHz due to reduced fT margin.
What is the recommended PCB layout for thermal management?
Mount the exposed thermal pad of the PowerSO-10RF package directly to a minimum 25 mm² copper pour with ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch) connecting to inner ground planes. Follow AN1294 guidelines for trace width, gap control (0.056" ±0.002"), and RF grounding to maintain 1.2 °C/W thermal resistance.
PD57045-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 5A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57045-E FAQ
1.How can I place an order for PD57045-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57045-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57045-E reliable?
The price and inventory of PD57045-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57045-E is usually 5 days.
3.What payment methods are accepted for PD57045-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57045-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57045-E?
PD57045-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57045-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57045-E?
For technical support, including PD57045-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57045-E requirements.
6.How does Aetrix verify that PD57045-E is sourced from the original manufacturer or authorized distributors?
All PD57045-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57045-E meets industry standards.
7.What is the process for return or replacement of PD57045-E?
All PD57045-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57045-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57045-E part is unused and in its original packaging.
Return procedure for PD57045-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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