STMicroelectronics PD57045S
- Part No.:
- PD57045S
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57045S.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:

- Shipping:

Inventory:9,139
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD57045S from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor designed for base station amplifiers operating up to 1 GHz. It delivers 45 W output power at 945 MHz with 13 dB gain and 50% drain efficiency under 28 V supply and 250 mA quiescent bias, housed in the PowerSO-10RF straight-lead plastic package.
For engineers reviewing the PD57045S datasheet, PD57045S pinout, PD57045S application, or PD57045S equivalent, this device is selected for high-linearity, broadband RF power amplification in commercial wireless infrastructure where thermal stability, SMD assembly compatibility, and JEDEC-qualified high-power packaging are critical.
Technical Context
This LDMOS transistor operates in common-source configuration with gate threshold voltage of 2.0–5.0 V and exhibits low input capacitance (CISS = 86 pF) and output capacitance (COSS = 47 pF) at 28 V, enabling stable broadband matching. Its transconductance (gFS = 2.0–2.7 mho) supports high gain across 50–1500 MHz.
The device features a normalized gate-source voltage temperature coefficient (±0.02 per °C over −25°C to +75°C), ensuring bias stability across case temperatures. Safe operating area (SOA) is defined up to 165°C junction temperature with 1.2 °C/W junction-to-case thermal resistance, optimized for continuous-wave and modulated signal operation in base station final stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 65 V - Maximum drain-source blocking voltage defines safe DC/RF voltage headroom in 28 V supply designs. |
| P1dB | 45 W @ 945 MHz - 1-dB compression point determines usable linear output power ceiling for LTE/WCDMA signals. |
| GP | 13–14.5 dB @ 945 MHz - Small-signal power gain enables single-stage amplification without cascaded stages in macrocell PA modules. |
| ηD | 50% @ POUT = 45 W - Drain efficiency directly impacts thermal load and power supply sizing in high-duty-cycle base station applications. |
| Rth(j-c) | 1.2 °C/W - Low thermal resistance allows direct mounting to heatsinks without thermal interface material degradation concerns. |
| CISS / COSS | 86 pF / 47 pF @ 28 V - Input/output capacitance values constrain matching network topology and bandwidth in 800–1000 MHz bands. |
| VGS(Q) | 2.0–5.0 V @ ID = 250 mA - Gate bias range sets stable Class AB operating point for linearity vs. efficiency trade-off. |
Pinout & Package
PD57045S uses the PowerSO-10RF straight-lead package: 10-terminal surface-mount plastic housing with exposed drain paddle for thermal conduction and mechanical anchoring. Dimensions include overall width L = 0.8–1.1 mm lead length and E = 15.15–15.65 mm body width.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GATE | Control electrode | Accepts DC bias and RF drive; requires external gate resistor for stability and ESD protection. |
| SOURCE | Common reference node | Connected to RF ground plane; serves as return path for both DC bias and RF current. |
| DRAIN | Power output terminal | High-current RF output node; electrically and thermally tied to exposed metal paddle for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC-qualified SMD package | PowerSO-10RF straight-lead meets JEDEC MO-255 standard for high-power RF reliability and automated assembly. |
| Thermal stability | Normalized VGS drift ≤ ±2% over −25°C to +75°C ensures consistent bias point across environmental operating range. |
| Linearity performance | IMD3 < −30 dBc typical at 945 MHz enables compliant ACLR in multi-carrier WCDMA/LTE base stations. |
| Robust SOA | Withstands 10:1 VSWR load mismatch at all phase angles, eliminating need for external circulators in deployed systems. |
| Lateral LDMOS architecture | Eliminates parasitic bipolar latch-up risk and enables stable operation under high RF stress and transient conditions. |
Applications
| Macrocell Base Station PA | Repeaters & Distributed Antenna Systems |
|---|---|
|
Use Scenario: Final-stage RF power amplifier in 900 MHz cellular base stations supporting multi-carrier WCDMA/LTE. IC Role / Device Role / Timing Role: High-efficiency, high-linearity power amplification stage delivering 45 W CW output into 50 Ω load. Use Value: Enables single-transistor 45 W solution with 50% drain efficiency, reducing board space and thermal management complexity versus hybrid alternatives. |
Use Scenario: Bidirectional amplification unit in in-building DAS nodes covering 925–960 MHz band. IC Role / Device Role / Timing Role: Linear driver for uplink/downlink paths with tight ACLR requirements under modulated signals. Use Value: Delivers >13 dB gain and < −30 dBc IMD3 across full band, meeting 3GPP TS 25.104 linearity specs without predistortion. |
| Public Safety Radio Infrastructure | ISM Band Amplifiers (915 MHz) |
|
Use Scenario: High-reliability RF PA in mission-critical land-mobile radio repeaters operating at 869–894 MHz. IC Role / Device Role / Timing Role: Final-stage amplifier with guaranteed 10:1 VSWR survivability during antenna fault conditions. Use Value: Eliminates need for external protection circuitry due to intrinsic ruggedness, improving system MTBF and field serviceability. |
Use Scenario: Industrial heating and RFID reader amplifiers requiring robust 915 MHz output at 45 W. IC Role / Device Role / Timing Role: Continuous-wave power stage with stable thermal response up to 165°C junction temperature. Use Value: Maintains output power within ±0.5 dB over ambient temperature range −40°C to +85°C, ensuring consistent process control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2300NB | Higher P1dB (300 W), GaN-on-SiC, 28 V, Rth(j-c) = 0.45 °C/W | Targets higher-power macrocells (>100 W); requires different gate biasing and thermal interface design | Select when scaling beyond 45 W or requiring >70% efficiency above 1 GHz. |
| PD57018S | Lower P1dB (18 W), same PowerSO-10RF package, identical pinout and bias scheme | Drop-in replacement for lower-power remote radio heads or small cells with reduced thermal load | Choose for cost-optimized, footprint-compatible downgrade where 18 W suffices and PCB layout reuse is critical. |
Compared with MRF6V2300NB, PD57045S offers proven LDMOS reliability and simpler biasing at lower power; versus PD57018S, it provides 2.5× higher output while retaining identical thermal and assembly interfaces.
Availability
PD57045S is available at Aetrix Electronics and suitable for macrocell base stations, public safety repeaters, distributed antenna systems, and ISM-band industrial amplifiers requiring stable component supply and long-term lifecycle support.
Supply support for PD57045S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.
PD57045S belongs to ST's LdmoST RF power transistor family, engineered specifically for broadband, high-efficiency, high-linearity amplification in cellular infrastructure equipment operating below 1.5 GHz.
FAQ
What is the maximum recommended gate-source voltage for PD57045S?
The absolute maximum VGS rating is ±20 V, but the safe operating range for reliable long-term performance is −5 V to +10 V. Exceeding +10 V risks permanent gate oxide damage, especially during transient events. The typical gate threshold voltage is 2.0–5.0 V at ID = 250 mA, and bias networks must limit peak gate voltage under RF drive conditions using series resistors and clamping diodes.
Can PD57045S be used in Class C or D amplifier topologies?
No-PD57045S is characterized and qualified only for Class AB operation. Its transconductance curve, thermal design, and SOA are optimized for linear amplification with 250 mA quiescent drain current. Class C or D operation would exceed safe junction temperature limits and violate the specified bias conditions, leading to premature failure and non-compliant spectral emissions.
Is the PowerSO-10RF package lead-free and RoHS-compliant?
Yes-PD57045S is manufactured in a lead-free, RoHS-compliant PowerSO-10RF package per STMicroelectronics' ECOPACK®2 specifications. The straight-lead variant (PD57045S) uses matte tin plating on leads and conforms to JEDEC J-STD-020 moisture sensitivity level 3, requiring bake prior to reflow if exposed to ambient >60% RH for >168 hours.
Does PD57045S require external matching components at 945 MHz?
Yes-PD57045S is not internally matched. Its typical input impedance at 945 MHz is 0.69 + j2.92 Ω and output impedance is 1.25 − j0.29 Ω, necessitating discrete L-C matching networks on PCB. Application note AN1294 provides verified schematics and layout guidelines for 900 MHz band matching using ATC 100B capacitors and air-wound inductors.
PD57045S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 5A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57045S FAQ
1.How can I place an order for PD57045S through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57045S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57045S reliable?
The price and inventory of PD57045S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57045S is usually 5 days.
3.What payment methods are accepted for PD57045S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57045S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57045S?
PD57045S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57045S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57045S?
For technical support, including PD57045S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57045S requirements.
6.How does Aetrix verify that PD57045S is sourced from the original manufacturer or authorized distributors?
All PD57045S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57045S meets industry standards.
7.What is the process for return or replacement of PD57045S?
All PD57045S units undergo pre-shipment inspection (PSI). If there is an issue with PD57045S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57045S part is unused and in its original packaging.
Return procedure for PD57045S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD57045S Tags

-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits

-
TAV2-501+
Mini-Circuits

-
CE3514M4-C2
CEL

-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits

-
CE3512K2-C1
CEL

-
AFM907NT1
NXP Semiconductors

-
SKY65050-372LF
Skyworks Solutions Inc.

-
CE3520K3-C1
CEL

-
AFT09MS007NT1
NXP USA Inc.

-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

.jpg)