STMicroelectronics PD57045S-E

Overview

PD57045S-E from STMicroelectronics is a 45 W N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF straight-lead package, operating at 28 V with 13 dB gain at 945 MHz in common-source configuration. It delivers 50% drain efficiency and withstands 10:1 VSWR load mismatch, targeting base station power amplifiers and broadband industrial RF transmitters.

For engineers reviewing the PD57045S-E datasheet, PD57045S-E pinout, PD57045S-E application, or PD57045S-E equivalent, key selection criteria include its 65 V V(BR)DSS rating, 1.2 °C/W junction-to-case thermal resistance, 45 W P1dB output power at 945 MHz, and compatibility with 28 V DC bias networks for cellular infrastructure amplification stages.

Technical Context

This device implements ST's LDMOS technology in a JEDEC-approved SMD plastic RF package optimized for high-reliability, high-power RF operation up to 1 GHz. Its lateral structure enables excellent thermal stability and linearity under large-signal conditions.

The common-source topology supports broadband matching with input impedance of 0.69 + j2.92 Ω and output impedance of 1.25 – j0.29 Ω at 945 MHz. It operates with 250 mA quiescent drain current and requires gate bias between 2.0–5.0 V for stable Class AB operation.

Key Specifications

Pinout & Package

PD57045S-E uses the PowerSO-10RF straight-lead package - a JEDEC-approved, high-power SMD RF package with formed leads optimized for thermal dissipation and RF performance. Dimensions comply with Table 12 (Doc ID 12616 Rev 2), including E = 15.15–15.65 mm width and L = 0.8–1.1 mm lead length.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD57045-E, the PD57045S-E offers identical RF performance with improved placement yield in modern pick-and-place systems; versus PD57060S-E, it provides higher gain and lower thermal density at the cost of 15 W output headroom-making it optimal for gain-limited, space-constrained base station modules.

Availability

PD57045S-E is available at Aetrix Electronics and suitable for cellular infrastructure, ISM band transmitters, broadband RF amplifiers, and public safety radio systems requiring stable component supply and JEDEC-qualified RF power packaging.

Supply support for PD57045S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

PD57045S-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for high-efficiency, high-linearity base station and industrial RF power amplification up to 1 GHz.

FAQ

What is the maximum recommended DC bias voltage for PD57045S-E?

The absolute maximum drain-source voltage (V(BR)DSS) is 65 V, but the device is characterized and optimized for 28 V DC operation. Operating above 28 V increases thermal stress and reduces reliability margin without proportional RF output benefit; ST specifies all dynamic parameters-including 45 W P1dB and 13 dB gain-at 28 V with 250 mA quiescent current.

Does PD57045S-E require external gate protection diodes?

No external gate protection diodes are required. The device features ±20 V maximum gate-source voltage rating and internal gate protection structures validated per ST's qualification standards. However, proper PCB layout-such as short gate traces, local decoupling, and controlled ESD handling-is essential to prevent latch-up or electrostatic damage during assembly.

How does the PowerSO-10RF straight-lead package differ electrically from the formed-lead version?

There is no electrical difference: PD57045S-E and PD57045-E share identical die, silicon process, and RF/thermal specifications. The straight-lead variant modifies only mechanical dimensions-specifically A1 (standoff) and E (overall width)-to improve coplanarity and placement accuracy in high-speed SMT lines, with no impact on impedance, gain, or efficiency.

Can PD57045S-E operate reliably at 1 GHz?

Yes. ST characterizes the device up to 1 GHz in common-source mode, with verified S-parameters (Table 9) and typical performance curves extending to 1500 MHz. At 1 GHz, it delivers ≥40 W P1dB and ≥11 dB gain under 28 V/250 mA bias, maintaining 45%+ drain efficiency-confirmed by Figure 9 and Figure 10 in the datasheet.