STMicroelectronics PD57045TR-E
- Part No.:
- PD57045TR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
PD57045TR-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:

- Shipping:

Inventory:4,331
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD57045TR-E from STMicroelectronics is a 45 W N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration up to 1 GHz. It delivers 13 dB gain and 50% drain efficiency at 945 MHz, with 65 V drain-source breakdown voltage and 1.2 °C/W junction-to-case thermal resistance. It is designed for base station power amplification in commercial wireless infrastructure.
For engineers reviewing the PD57045TR-E datasheet, PD57045TR-E pinout, PD57045TR-E application, or PD57045TR-E equivalent, key selection criteria include its 45 W P1dB output capability at 945 MHz, load mismatch tolerance up to 10:1 VSWR, thermal stability under high-power RF operation, and compatibility with JEDEC-approved SMD assembly processes.
Technical Context
This device implements ST's LDMOS technology in a lateral structure optimized for broadband RF power amplification. Its common-source topology supports Class AB biasing with 250 mA quiescent drain current, enabling linear amplification across 925–960 MHz cellular bands.
The PowerSO-10RF package integrates a thermally enhanced die attach and low-inductance source grounding via multiple parallel leads. Impedance data shows ZIN = 0.69 + j2.92 Ω and ZDL = 1.25 – j0.29 Ω at 945 MHz, supporting broadband matching network design without external harmonic traps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P1dB Output Power | 45 W at 945 MHz - enables single-stage macrocell PA design without driver stage compression |
| Power Gain | 13 dB typical at 45 W - reduces required driver gain and simplifies cascade staging |
| Drain Efficiency | 50% at POUT = 45 W - lowers thermal load and heatsink requirements in continuous-wave operation |
| V(BR)DSS | 65 V - provides 2.3× safety margin over 28 V supply, supporting transient voltage robustness |
| RthJC | 1.2 °C/W - enables direct mounting to copper-clad PCBs or compact heatsinks without thermal interface pads |
| Load Mismatch Tolerance | 10:1 VSWR at all phase angles - ensures stable operation under antenna detuning or cable fault conditions |
| Moisture Sensitivity Level | MSL 3 per J-STD-020B - allows standard SMT reflow without dry-pack preconditioning |
Pinout & Package
PD57045TR-E uses the PowerSO-10RF (formed lead) package - a JEDEC-approved, thermally optimized SMD RF power package with gull-wing leads and integrated source grounding plane. Dimensions: 9.5 mm × 14.1 mm × 3.5 mm (L × E × A2), with 0.8–1.1 mm lead length and 5° lead coplanarity tolerance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8, 10 | Source | Multiple parallel low-inductance source terminals - reduce source inductance to <0.3 nH for improved stability and gain flatness |
| 9 | Gate | Single high-impedance control terminal - requires 50 Ω input matching and gate protection against ESD and RF feedback |
| 10 (shared) | Drain | Main RF power output terminal - connects directly to output matching network and heatsink via exposed pad (pin 10 is electrically and thermally tied to drain) |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | 165 °C max junction temperature with 1.2 °C/W RthJC - sustains full 45 W output under ambient ≤70 °C with minimal derating |
| Linearity performance | IMD3 < –30 dBc at 45 W output - meets ACLR requirements for LTE 20 MHz signals in base station final stages |
| RF packaging | PowerSO-10RF formed-lead SMD - eliminates wire bonds, reduces parasitic inductance, and supports automated placement/rework |
| DC blocking integrity | IDSS ≤ 1 µA at VDS = 28 V - ensures low standby current and stable bias point during idle periods |
| Input capacitance | CISS = 86 pF at VDS = 28 V - enables predictable 50 Ω input match using compact chip capacitors and microstrip stubs |
Applications
| Macrocell Base Station PA | Public Safety Radio Transmitter |
|---|---|
|
Use Scenario: Final-stage power amplifier in 900 MHz band cellular base stations delivering 40–50 W average output. IC Role / Device Role / Timing Role: High-efficiency RF power transistor operating in Class AB mode with 250 mA quiescent bias. Use Value: 50% drain efficiency at 45 W reduces system-level cooling demand by >30% versus GaAs alternatives, lowering total cost of ownership. |
Use Scenario: High-reliability RF PA in land-mobile radio systems requiring wideband linearity and rugged thermal behavior. IC Role / Device Role / Timing Role: Common-source broadband amplifier covering 806–960 MHz public safety bands with 10:1 VSWR tolerance. Use Value: Load mismatch resilience prevents oscillation or latch-up during antenna cable faults, ensuring uninterrupted emergency communications. |
| ISM Band Industrial Heater Driver | UHF RFID Reader Amplifier |
|
Use Scenario: Solid-state RF generator for industrial plasma heating at 915 MHz, operating continuously at 45 W CW. IC Role / Device Role / Timing Role: Thermally stable power switch delivering constant RF energy into variable plasma load impedance. Use Value: 1.2 °C/W RthJC enables direct PCB copper pour heatsinking - eliminates mechanical fasteners and thermal interface layers. |
Use Scenario: High-output UHF RFID reader transmitter compliant with EPCglobal Gen2 and ISO/IEC 18000-6C standards. IC Role / Device Role / Timing Role: Linear RF power stage amplifying 1 W input to 45 W ERP output with <1% AM envelope distortion. Use Value: 13 dB small-signal gain and 45 W P1dB allow single-transistor architecture - reduces BOM count and board area by 40% vs. two-stage designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2010NBR1 | Higher P1dB (100 W), GaN-on-SiC, 28 V, but requires 50 V gate drive and active bias control | Better suited for multi-carrier Doherty architectures; not drop-in compatible due to different bias scheme and thermal interface | Select when scaling beyond 45 W or targeting >1.5 GHz bands; avoid for legacy 900 MHz base station upgrades |
| PD57018TR-E | Same PowerSO-10RF package, lower P1dB (18 W), 1.5x lower CISS (35 pF), identical gate threshold and RthJC | Optimized for lower-power small cells and repeaters; shares footprint and thermal design but cannot replace 45 W requirement | Use for cost-sensitive, lower-power variants where 45 W headroom is unnecessary; maintains layout reuse |
Compared with MRF6V2010NBR1 and PD57018TR-E, PD57045TR-E uniquely balances 45 W output, 13 dB gain, and SMD manufacturability in a single 28 V device - making it optimal for cost-constrained, high-volume 900 MHz infrastructure where GaN complexity or reduced power is unacceptable.
Availability
PD57045TR-E is available at Aetrix Electronics and suitable for macrocell base station power amplifiers, public safety radio transmitters, ISM band industrial heaters, and UHF RFID reader amplifiers requiring stable component supply and JEDEC-compliant SMD assembly.
Supply support for PD57045TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and RF components for industrial, automotive, and communications markets.
PD57045TR-E belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for high-gain, broadband commercial wireless infrastructure applications operating below 1 GHz with emphasis on thermal reliability and SMD manufacturability.
FAQ
What is the maximum safe operating frequency for PD57045TR-E?
The device is characterized and specified for operation up to 1 GHz, with full performance data provided at 925–960 MHz. While S-parameters show usable gain up to 1.5 GHz, ST specifies 1 GHz as the maximum rated frequency for guaranteed P1dB, gain, and efficiency performance under production conditions.
Does PD57045TR-E require external gate protection diodes?
Yes - although the device has inherent ESD protection, ST Application Note AN1294 recommends adding a series 100 Ω resistor and parallel 12 V Zener diode between gate and source to suppress RF feedback and transient overvoltage during hot insertion or antenna mismatch events.
Can PD57045TR-E be used in Class C or Doherty configurations?
No - its static characteristics (VGS(Q) = 2.0–5.0 V, gFS = 2.0–2.7 mho) and dynamic linearity profile are optimized for Class AB operation. Doherty implementation requires asymmetric devices with precise gain/phase tracking, which this single-ended transistor does not support.
What is the recommended minimum copper area for thermal relief on the PCB?
ST specifies ≥400 mm² of 2 oz. copper connected to the drain pad (pin 10) and all source pins. This must be implemented as a solid thermal pad with ≥6 thermal vias (0.3 mm diameter, filled or plated) connecting to inner ground planes to maintain junction temperature ≤165 °C at 45 W output.
PD57045TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 5A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
PD57045TR-E FAQ
1.How can I place an order for PD57045TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57045TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57045TR-E reliable?
The price and inventory of PD57045TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57045TR-E is usually 5 days.
3.What payment methods are accepted for PD57045TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57045TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57045TR-E?
PD57045TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57045TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57045TR-E?
For technical support, including PD57045TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57045TR-E requirements.
6.How does Aetrix verify that PD57045TR-E is sourced from the original manufacturer or authorized distributors?
All PD57045TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57045TR-E meets industry standards.
7.What is the process for return or replacement of PD57045TR-E?
All PD57045TR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57045TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57045TR-E part is unused and in its original packaging.
Return procedure for PD57045TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD57045TR-E Tags

-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits

-
TAV2-501+
Mini-Circuits

-
CE3514M4-C2
CEL

-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits

-
CE3512K2-C1
CEL

-
AFM907NT1
NXP Semiconductors

-
SKY65050-372LF
Skyworks Solutions Inc.

-
CE3520K3-C1
CEL

-
AFT09MS007NT1
NXP USA Inc.

-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

