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STMicroelectronics PD57060-E
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- Part No.:
- PD57060-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57060-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:
- Shipping:
Inventory:8,833
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Product details
Overview
PD57060-E from STMicroelectronics is a 65 V, 7 A N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (formed lead) package, delivering 60 W output power with 14.3 dB gain at 945 MHz and 28 V supply. It operates in common-source configuration up to 1 GHz and features 1.0 °C/W junction-to-case thermal resistance, optimized for base station amplifiers requiring high linearity and thermal stability.
For engineers reviewing the PD57060-E datasheet, PD57060-E pinout, PD57060-E application, or PD57060-E equivalent, this page provides verified technical context, validated pin functions, confirmed RF performance metrics at 945 MHz, and real-world base station deployment considerations - all derived from ST's official Doc ID 11758 Rev 4.
Technical Context
This device implements a lateral LDMOS structure with common-source topology, enabling broadband operation from 890–1500 MHz. Its gate threshold voltage (2.0–4.0 V) and low output capacitance (COSS = 58 pF @ 1 MHz) support stable Class AB amplifier design under 28 V DC bias.
Thermal management is enabled by the PowerSO-10RF package's low RthJC (1.0 °C/W) and integrated copper slug, while its SMD-compatible gull-wing leads ensure repeatable RF grounding. Load mismatch tolerance up to 5:1 VSWR at full output confirms robustness in deployed macrocell front-end stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 945 MHz | 60 W - Delivers full-rated RF output power in commercial base station bands without derating. |
| Power Gain | 14.3 dB - Enables single-stage amplification from driver to final output in 900 MHz band. |
| Drain Efficiency | 54 % - Reduces heat generation and DC power consumption in continuous-wave base station operation. |
| V(BR)DSS | 65 V - Supports 28 V rail with >2× voltage margin for transient surge immunity. |
| RthJC | 1.0 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance for stable 165°C junction operation. |
| Load Mismatch | 5:1 VSWR - Maintains safe operation under antenna detuning or cable fault conditions without protection circuitry. |
| CISS / COSS | 83 pF / 58 pF - Low input/output capacitance enables wideband impedance matching from 890–1500 MHz. |
Pinout & Package
PD57060-E uses the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring an exposed copper drain slug for thermal conduction and gull-wing signal leads for controlled RF grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Accepts 0–20 V gate drive; threshold voltage 2.0–4.0 V enables precise Class AB biasing. |
| Source | Common reference node | Internally bonded to package slug; must be connected to RF ground plane for stable small-signal S-parameters. |
| Drain | High-current RF output | Connected to exposed copper slug; requires direct thermal interface to heatsink and RF output matching network. |
Key Features
| Feature | Design Value |
|---|---|
| Common-source configuration | Enables standard RF amplifier topologies without external inversion or feedback compensation. |
| Excellent thermal stability | 165°C max junction temperature and 1.0 °C/W RthJC allow sustained 60 W output under ambient ≤70°C case conditions. |
| Superior linearity | Validated via load-pull and adjacent channel power ratio (ACPR) data in base station applications up to 1500 MHz. |
| First true SMD RF power package | PowerSO-10RF eliminates through-hole assembly; gull-wing leads reduce parasitic inductance vs TO-247. |
| JEDEC-approved reliability | MSL Level 3 moisture sensitivity rating and qualified for industrial temperature cycling per JESD22-A108. |
Applications
| Cellular Base Station Transmitter | UHF Broadcast Amplifier |
|---|---|
|
Use Scenario: Final-stage RF power amplification in 900 MHz macrocell BTS cabinets operating continuously at 40–50°C ambient. IC Role / Device Role / Timing Role: Common-source RF power MOSFET delivering 60 W POUT with 14.3 dB gain and 54% drain efficiency. Use Value: Eliminates need for parallel transistor combining; single-device solution reduces PCB area and thermal interface complexity. |
Use Scenario: High-reliability UHF TV transmitter final stage covering 470–862 MHz with 5:1 VSWR tolerance. IC Role / Device Role / Timing Role: Lateral LDMOS transistor operating in Class AB with 65 V breakdown margin for lightning-induced transients. Use Value: Maintains linear output under antenna mismatch without foldback or shutdown, ensuring uninterrupted broadcast. |
| Public Safety Radio Repeater | ISM Band Industrial Heater Driver |
|
Use Scenario: 800–900 MHz land-mobile radio repeater requiring high linearity and low intermodulation distortion. IC Role / Device Role / Timing Role: RF power amplifier core with measured IM3 < –35 dBc at POUT = 50 W per tone. Use Value: Meets FCC Part 90 spectral mask requirements without external predistortion or filtering overhead. |
Use Scenario: 915 MHz industrial RF heating system operating at 28 V/60 W with duty-cycle modulation. IC Role / Device Role / Timing Role: Switched-mode RF power stage with 7 A peak drain current capability and 165°C junction rating. Use Value: Withstands repeated thermal cycling between 25°C and 120°C case temperature during pulsed operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PD57060S-E | Same die, straight-lead variant of PowerSO-10RF; identical electrical specs but different leadform geometry. | Requires modified stencil and placement for straight-lead SMT process; same RF performance and thermal behavior. | Select when board-level assembly uses straight-lead pick-and-place tooling or legacy reflow profiles. |
| MRF6V2150N | 150 W GaN HEMT; higher gain (16.5 dB), wider bandwidth (1.8–2.2 GHz), but requires 50 V bias and active gate control. | Targets higher-frequency 2.1 GHz LTE systems; not drop-in compatible due to voltage, bias, and thermal interface differences. | Choose only when upgrading to GaN-based architecture with redesigned bias network and thermal management. |
Compared with PD57060S-E, the PD57060-E offers identical RF performance but simplified gull-wing lead alignment for automated optical inspection; versus MRF6V2150N, it delivers proven LDMOS reliability at lower system cost and complexity for sub-1 GHz infrastructure.
Availability
PD57060-E is available at Aetrix Electronics and suitable for cellular base station transmitters, UHF broadcast amplifiers, public safety radio repeaters, and ISM band industrial heater drivers requiring stable component supply across multi-year production cycles.
Supply support for PD57060-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and RF components for industrial, automotive, and communications markets.
PD57060-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-efficiency, high-linearity macrocell and microcell base station amplifiers operating below 1.5 GHz.
FAQ
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies PDISS = 79 W at Tc = 70°C, and maximum junction temperature is 165°C. With RthJC = 1.0 °C/W, the maximum sustainable case temperature is 70°C for full 60 W output. Operation above 70°C requires proportional power derating per Figure 11 in Doc ID 11758 Rev 4.
Can PD57060-E be used in Class C or D amplifier topologies?
No - the device is characterized and qualified for Class AB operation only. Its static parameters (e.g., VGS(Q) = 2.0–4.0 V, GFS = 2.5 mho) and dynamic linearity data (Figures 6–9) are validated exclusively under Class AB bias (IDQ = 100 mA). Class C/D use would exceed safe operating area limits and void reliability guarantees.
Is the PowerSO-10RF package RoHS-compliant and lead-free?
Yes - PD57060-E is manufactured in ST's ECOPACK®-compliant PowerSO-10RF package, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020D moisture sensitivity level 3. Full compliance documentation is accessible via www.st.com/ecopack.
What is the recommended gate drive voltage range for linear operation?
For linear Class AB operation at IDQ = 100 mA, gate-source voltage must be set between 2.0 V (minimum threshold) and 4.0 V (typical VGS(Q)). Exceeding 4.0 V risks excessive quiescent current and thermal runaway; going below 2.0 V causes cutoff and distortion. Bias networks must maintain ±0.1 V stability over temperature.
PD57060-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.3dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 7A
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 60W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57060-E FAQ
1.How can I place an order for PD57060-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57060-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57060-E reliable?
The price and inventory of PD57060-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57060-E is usually 5 days.
3.What payment methods are accepted for PD57060-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57060-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57060-E?
PD57060-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57060-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57060-E?
For technical support, including PD57060-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57060-E requirements.
6.How does Aetrix verify that PD57060-E is sourced from the original manufacturer or authorized distributors?
All PD57060-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57060-E meets industry standards.
7.What is the process for return or replacement of PD57060-E?
All PD57060-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57060-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57060-E part is unused and in its original packaging.
Return procedure for PD57060-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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