STMicroelectronics PD57060S-E

Overview

PD57060S-E from STMicroelectronics is a 60 W N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (straight lead) package, operating at 28 V in common-source configuration with 14.3 dB gain at 945 MHz. It features 65 V drain-source breakdown voltage, 1.0 °C/W junction-to-case thermal resistance, and 54% drain efficiency at 60 W output. Designed for base station amplifiers requiring broadband linearity and thermal stability up to 1 GHz.

For engineers reviewing the PD57060S-E datasheet, PD57060S-E pinout, PD57060S-E application, or PD57060S-E equivalent, key selection criteria include RF output power capability at 945 MHz, load mismatch tolerance (5:1 VSWR), gate-source threshold voltage range (2.0–4.0 V), thermal performance under 70°C case temperature, and compatibility with SMD assembly in PowerSO-10RF footprint.

Technical Context

This device implements a common-source, enhancement-mode lateral LDMOS architecture optimized for high-gain, broadband RF power amplification. Its design targets commercial and industrial base station transmitters operating between 890–1500 MHz, with static and dynamic characterization validated at 28 V drain supply and 100 mA quiescent drain current.

Thermal management is integral: the PowerSO-10RF package delivers 1.0 °C/W R_thJC, enabling stable 60 W P_OUT operation without forced cooling at T_CASE ≤ 70°C. Impedance data (e.g., Z_IN = 0.705 + j0.692 Ω at 945 MHz) supports broadband matching network design for minimal input return loss across cellular bands.

Key Specifications

Pinout & Package

PD57060S-E uses the PowerSO-10RF (straight lead) plastic package - ST's JEDEC-approved, high-power SMD RF package optimized for thermal dissipation and RF performance. Dimensions include overall width 15.15–15.65 mm (E), length 9.4–9.6 mm (D), and 10-terminal gull-wing/straight-lead configuration with exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD57060-E (formed lead), PD57060S-E offers identical RF performance but simplified SMT placement with straight leads; versus MRF6V2150N, it trades peak power and frequency for lower system cost, proven reliability at 28 V, and seamless integration into existing 900 MHz base station designs.

Availability

PD57060S-E is available at Aetrix Electronics and suitable for macrocell base station amplifiers, public safety radio transmitters, and ISM-band industrial RF heating systems requiring stable component supply and long-term lifecycle support.

Supply support for PD57060S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for industrial, automotive, and communications markets.

PD57060S-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-efficiency, broadband cellular infrastructure applications demanding ruggedness, linearity, and manufacturability in SMD packages.

FAQ

What is the maximum recommended case temperature for continuous 60 W operation?

The datasheet specifies P_DISS = 79 W at T_CASE = 70°C. For continuous 60 W RF output at 28 V, junction temperature remains within 165°C limit only if case temperature is maintained ≤ 70°C using appropriate heatsinking per AN1294 mounting guidelines.

Does PD57060S-E require external gate protection diodes?

Yes - although V_GS rating is ±20 V, real-world RF PA layouts expose the gate to ESD and transient coupling. ST recommends discrete TVS diodes (e.g., SM712) between gate and source, as detailed in application note AN1294 for PowerSO-10RF layout best practices.

Can PD57060S-E be used in push-pull configuration?

No - the device is characterized and qualified exclusively for common-source operation. Push-pull use would violate biasing assumptions, invalidate thermal models, and risk asymmetry-induced distortion or failure due to lack of matched pair characterization or complementary device availability.

What is the gate charge (Q_G) value for PD57060S-E?

Q_G is not specified in the provided datasheet (Doc ID 11758 Rev 4). Gate charge must be derived from C_ISS (83 pF), C_OSS (58 pF), and C_RSS (3 pF) under defined V_GS sweep conditions; ST does not publish Q_G for this part, and design should rely on measured S-parameters and gate drive simulation instead.