STMicroelectronics PD57060STR-E

Overview

PD57060STR-E from STMicroelectronics is a 60 W N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (straight lead) package, operating at 28 V in common-source configuration up to 1 GHz. It delivers 14.3 dB gain and 54% drain efficiency at 945 MHz with 100 mA quiescent drain current, optimized for base station power amplifiers requiring high linearity and thermal stability.

For engineers reviewing the PD57060STR-E datasheet, PD57060STR-E pinout, PD57060STR-E application, or PD57060STR-E equivalent, this device is selected for broadband RF power amplifier stages in commercial and industrial wireless infrastructure where POUT ≥ 60 W, gain flatness across 890–960 MHz, and load mismatch tolerance (5:1 VSWR) are critical design requirements.

Technical Context

This LDMOS transistor uses a common-source configuration with gate-source voltage threshold of 2.0–4.0 V and exhibits low input/output capacitance (CISS = 83 pF, COSS = 58 pF) enabling stable broadband matching. Its 1.0 °C/W junction-to-case thermal resistance supports high-power operation under forced-air or heatsink-cooled conditions.

Dynamic performance is characterized at 28 V drain supply and 100 mA IDQ, delivering 60 W output power with 14.3 dB power gain and 54% drain efficiency at 945 MHz - key metrics validated across 890–1500 MHz via S-parameter tables under multiple bias conditions (IDS = 150 mA, 1.5 A, and 75 mA).

Key Specifications

Pinout & Package

PD57060STR-E is housed in PowerSO-10RF (straight lead) package - ST's JEDEC-approved surface-mount RF power package with integrated source-tab thermal path and optimized RF parasitics. Dimensions: 9.4–9.6 mm × 15.15–15.65 mm × 3.4–3.6 mm height; lead pitch 0.8–1.1 mm; gull-wing leads replaced by straight leads for improved mechanical robustness and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD57060S-E and PD57060TR-E, the PD57060STR-E offers identical RF performance and thermal capability while optimizing for high-yield automated assembly via straight-lead geometry and tape-and-reel delivery - reducing placement skew and improving solder joint reliability in volume manufacturing.

Availability

PD57060STR-E is available at Aetrix Electronics and suitable for cellular base station transmitters, public safety radio amplifiers, ISM band industrial heaters, and wireless infrastructure test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PD57060STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

PD57060STR-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial wireless infrastructure applications demanding reliability, linearity, and thermal robustness.

FAQ

What is the recommended gate drive voltage range for PD57060STR-E?

The gate-source voltage (VGS) must remain within ±20 V absolute maximum rating. For linear Class AB operation, typical VGS(Q) is 2.0–4.0 V at ID = 100 mA. Gate drive should be AC-coupled with series resistance (≥10 Ω) to suppress parasitic oscillation, and clamped with back-to-back Zener diodes to prevent exceeding ±20 V during transients.

Can PD57060STR-E operate reliably at 1 GHz?

Yes - the datasheet specifies operation up to 1 GHz in common-source mode at 28 V. Measured S-parameters confirm usable gain (≥0.34 dB |S21|) and stable input match (|S11| ≤ 0.979) through 1500 MHz at multiple bias points, with full characterization provided from 150 MHz to 1500 MHz.

Is thermal derating required above 70°C case temperature?

Yes - the 79 W maximum power dissipation rating applies only at TCASE = 70°C. Above that, linear derating applies: PDISS = 79 W − [(TCASE − 70°C) × 1.0 W/°C], based on RthJC = 1.0 °C/W. At 100°C case temperature, maximum allowable dissipation drops to 49 W.

Does PD57060STR-E require external matching components?

Yes - it is not internally matched. The device requires external input/output matching networks to transform 50 Ω system impedance to its complex ZIN (e.g., 0.705 + j0.692 Ω at 945 MHz) and ZDL (1.278 − j1.935 Ω). Application note AN1294 provides layout guidelines and matching topology recommendations for PowerSO-10RF packages.