STMicroelectronics PD57060TR-E

Overview

PD57060TR-E from STMicroelectronics is a 60 W N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (formed lead) package, operating at 28 V in common-source configuration up to 1 GHz. It delivers 14.3 dB gain and 54% drain efficiency at 945 MHz with 100 mA quiescent bias, optimized for base station amplifiers requiring high linearity and thermal stability.

For engineers reviewing the PD57060TR-E datasheet, PD57060TR-E pinout, PD57060TR-E application, or PD57060TR-E equivalent, this device is selected for broadband RF power amplification in commercial and industrial infrastructure where gain flatness, load mismatch tolerance (5:1 VSWR), and SMD manufacturability are critical design requirements.

Technical Context

This LDMOS transistor uses ST's proprietary lateral MOSFET architecture with optimized gate layout and thermal path design to achieve stable RF performance across temperature and process variation. Its common-source configuration supports broadband matching from 890–1500 MHz, with S-parameters validated at 28 V/1.5 A and 28 V/150 mA bias points.

The device integrates into RF power stages requiring high output power density and low thermal resistance (R_thJC = 1.0 °C/W). Its PowerSO-10RF package features JEDEC-approved SMD footprint with formed leads, enabling automated assembly while maintaining RF integrity via controlled impedance transmission lines and ground plane integration.

Key Specifications

Pinout & Package

PD57060TR-E is housed in the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring integrated source grounding, optimized leadframe geometry for minimal parasitic inductance, and thermal pad for direct PCB heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD57060S-E, PD57060TR-E offers identical RF performance in tape-and-reel format for high-volume SMT production, while MRF6V2010N represents a technology shift to GaN with trade-offs in power level, thermal management, and system-level redesign requirements.

Availability

PD57060TR-E is available at Aetrix Electronics and suitable for cellular infrastructure, public safety radios, ISM heating systems, and broadband wireless access equipment requiring stable component supply and long-term manufacturing continuity.

Supply support for PD57060TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

PD57060TR-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial base station amplifiers operating up to 1 GHz with emphasis on manufacturability, thermal reliability, and linearity.

FAQ

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies P_DISS = 79 W at T_CASE = 70°C, and the absolute maximum junction temperature is 165°C. With R_thJC = 1.0 °C/W, sustained operation at full 60 W output requires maintaining case temperature ≤70°C via adequate heatsinking or PCB copper area, verified using thermal simulation or IR measurement.

Does PD57060TR-E require external gate protection diodes?

No - the device includes integrated gate protection structures. The absolute maximum V_GS rating is ±20 V, and typical gate leakage (I_GSS) is ≤1 µA at 20 V. External clamping is unnecessary if gate drive remains within specified limits and PCB layout avoids ESD-prone traces near the gate pad.

Can PD57060TR-E be operated at frequencies above 1 GHz?

Electrical characterization extends to 1500 MHz, with validated S-parameters up to that frequency. However, output power and gain degrade significantly beyond 1 GHz - e.g., P_OUT drops to ~25 W at 1200 MHz. Operation above 1 GHz is feasible only in applications accepting reduced power and efficiency, not for full-rated performance.

How does the PowerSO-10RF package differ from standard SO-10 packages?

PowerSO-10RF is mechanically and thermally optimized for RF power: it features an exposed thermal pad, shortened internal bond wires, gull-wing or straight leads with controlled impedance geometry, and JEDEC-qualified reflow profile. Standard SO-10 lacks thermal pad, has higher parasitic inductance, and is not rated for >1 W RF dissipation.