STMicroelectronics PD57070-E

Overview

PD57070-E from STMicroelectronics is a N-channel enhancement-mode lateral RF power MOSFET in PowerSO-10RF (formed lead) package, designed for common-source broadband amplification at up to 1 GHz. It delivers 70 W output power with 14.7 dB gain at 945 MHz under 28 V supply and 250 mA quiescent drain current, targeting base station transmitter stages requiring high linearity and thermal stability.

For engineers reviewing the PD57070-E datasheet, PD57070-E pinout, PD57070-E application, or PD57070-E equivalent, this device is selected for RF final-stage amplifiers in 900 MHz cellular infrastructure where P1dB, efficiency, and load mismatch tolerance (5:1 VSWR) are critical design constraints.

Technical Context

This LDMOS transistor operates in common-source configuration with fixed 28 V drain supply and adjustable gate bias. Its lateral structure enables superior thermal stability and high reliability in continuous-wave and modulated signal applications up to 1 GHz.

Designed for base station power amplifiers, it features low input/output capacitance (CISS = 91 pF, COSS = 58 pF), high transconductance (GFS = 2.5 mho), and robust 5:1 VSWR tolerance across full output power range - enabling simplified matching network design and improved system ruggedness.

Key Specifications

Pinout & Package

PD57070-E uses the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for thermal conduction and RF performance. The package features an exposed drain pad for direct thermal attachment and gull-wing leads for surface-mount assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6V2150N and PD57018-E, PD57070-E uniquely balances 70 W output, SMD manufacturability, and 5:1 VSWR tolerance - making it optimal for mid-tier macrocell and hardened outdoor repeater designs where thermal density and assembly yield are critical.

Availability

PD57070-E is available at Aetrix Electronics and suitable for cellular base station PA, ISM band amplifiers, public safety radio transmitters, and wireless infrastructure repeaters requiring stable component supply and long-term industrial availability.

Supply support for PD57070-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontrollers - with over 40 years of RF power device innovation.

PD57070-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial base station amplifiers operating up to 1 GHz with emphasis on linearity, reliability, and thermal robustness.

FAQ

What is the recommended gate bias voltage for PD57070-E in Class AB operation?

The typical gate-source voltage for 250 mA quiescent drain current is 2.0–5.0 V (VGS(Q)), with 3.5 V commonly used in reference designs. Bias must be stabilized using a low-temperature-coefficient resistor network and decoupled with RF chokes to prevent oscillation and ensure thermal stability across -40°C to +85°C ambient.

Can PD57070-E operate reliably at 1000 MHz?

Yes - datasheet Table 5 confirms 70 W POUT and 13 dB gain at 1000 MHz under 28 V/250 mA conditions. S-parameter data (Table 9) shows |S21| ≥ 0.35 up to 1500 MHz, confirming usable gain beyond 1 GHz, though output power rolls off above 960 MHz per Figure 6.

Is the PowerSO-10RF package lead-free and RoHS compliant?

Yes - PD57070-E carries ECOPACK® compliance certification per ST's environmental program. The PowerSO-10RF package meets RoHS Directive 2011/65/EU and is halogen-free, with MSL 3 rating confirmed in Table 6 per J-STD-020B.

How does PD57070-E handle load mismatch during transmission bursts?

It maintains safe operation under 5:1 VSWR at all phase angles while delivering full 70 W output (Table 5), verified by ST's internal ruggedness testing. This eliminates need for external protection circuits in base station applications where antenna VSWR varies dynamically during beamforming or environmental changes.