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STMicroelectronics PD57070S
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- Part No.:
- PD57070S
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57070S.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO10
- Quantity:
- Payment:
- Shipping:
Inventory:8,019
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Product details
Overview
PD57070S from STMicroelectronics is a 70 W N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF straight-lead package, operating at 28 V in common-source configuration up to 1 GHz. It delivers 14.7 dB gain and 50% drain efficiency at 945 MHz with 250 mA quiescent bias, optimized for base station amplifiers requiring high linearity and thermal stability.
For engineers reviewing the PD57070S datasheet, PD57070S pinout, PD57070S application, or PD57070S equivalent, this device is selected for 900–960 MHz cellular infrastructure power amplification where gain flatness, VSWR tolerance (5:1), and SMD manufacturability in JEDEC-approved PowerSO-10RF are critical design requirements.
Technical Context
This LDMOS transistor uses ST's proprietary lateral structure for improved thermal stability and linearity versus vertical MOSFETs. Its common-source topology supports broadband matching from 890–1500 MHz, with gate-source voltage tuning (2.0–5.0 V) enabling precise bias control across temperature.
The device integrates into Class AB amplifier stages with DC blocking and RF matching networks, leveraging its low input impedance (e.g., 0.37 + j0.60 Ω at 900 MHz) and stable output load impedance (1.7 − j0.50 Ω). Thermal resistance of 1.0 °C/W enables high-power operation with standard heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 70 W at 945 MHz, 28 V, 250 mA - sufficient for macrocell PA final stage in GSM/UMTS bands |
| Power Gain | 14.7 dB typical at 945 MHz - enables single-stage amplification without cascaded drivers |
| Drain Efficiency | 50% at POUT = 70 W - reduces thermal load and DC power consumption in continuous-wave operation |
| Junction-to-Case Rth | 1.0 °C/W - allows 95 W dissipation at 70°C case temperature, supporting compact thermal design |
| VSWR Tolerance | 5:1 at all phase angles - ensures rugged operation under antenna mismatch in outdoor base stations |
| Input Capacitance (CISS) | 91 pF at 28 V - defines matching network component values and bandwidth limitations |
| Gate Threshold Voltage | 2.0–5.0 V - enables stable Class AB biasing with minimal drift over temperature |
Pinout & Package
PD57070S is housed in PowerSO-10RF straight-lead plastic package (JEDEC MO-235 compliant), featuring exposed drain pad for thermal conduction and three dedicated terminals: Gate, Source, Drain. The package supports surface-mount assembly with 0.8–1.1 mm lead length and 9.4–9.6 mm width.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GATE | Control electrode | Accepts DC bias (2–5 V) and RF drive signal; requires external gate resistor for stability |
| SOURCE | Common reference node | Connected to RF ground plane; serves as return path for both DC and RF currents |
| DRAIN | Power output terminal | High-current RF output node; mounted to heatsink via exposed copper pad for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Common-source configuration | Enables direct integration into standard RF PA topologies without level-shifting or inversion |
| PowerSO-10RF SMD package | First ST JEDEC-approved high-power RF plastic package, enabling automated assembly and repeatable thermal performance |
| Excellent thermal stability | Normalized VGS drift < ±2% from −25°C to +100°C at ID = 2–6 A - maintains bias point under ambient variation |
| High linearity | IMD3 < −30 dBc at 70 W output - meets spectral mask requirements for multi-carrier UMTS/LTE signals |
| Robust VSWR handling | Operates safely at 5:1 VSWR across full phase range - eliminates need for circulators in remote radio heads |
Applications
| Cellular Base Station PA | ISM Band Amplifier |
|---|---|
Use Scenario: Final-stage power amplifier in 900 MHz macrocell BTS supporting 4-carrier GSM. IC Role / Device Role / Timing Role: High-efficiency RF power transistor delivering 70 W saturated output with 14.7 dB small-signal gain. Use Value: Enables single-transistor final stage design, reducing BOM count and PCB area versus hybrid solutions. |
Use Scenario: 915 MHz industrial heating amplifier requiring 50+ W CW output. IC Role / Device Role / Timing Role: Linear RF power device biased in Class AB for stable continuous-wave operation. Use Value: 50% drain efficiency minimizes heatsink size and cooling system cost in enclosed enclosures. |
| Public Safety Radio | Wireless Infrastructure Repeater |
Use Scenario: 890–960 MHz land-mobile radio repeater PA with stringent reliability requirements. IC Role / Device Role / Timing Role: Ruggedized RF transistor rated for 165°C junction temperature and 5:1 VSWR tolerance. Use Value: Eliminates field failures due to antenna detuning or environmental stress without external protection circuits. |
Use Scenario: In-building distributed antenna system (DAS) booster operating at 945 MHz. IC Role / Device Role / Timing Role: Broadband linear amplifier with flat gain (±0.5 dB) from 890–960 MHz. Use Value: Maintains EVM < 3.5% for QPSK signals across band, ensuring compliance with FCC Part 90 emission limits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2750N | 75 W @ 2.14 GHz, GaN HEMT, Rth(j-c) = 0.75 °C/W, VDS(max) = 50 V | Higher frequency (2.14 GHz), lower supply voltage (28 V → 28 V), higher thermal conductivity | Select for LTE-A 2.1 GHz macrocells needing >70 W above 1.8 GHz; not drop-in for 900 MHz due to impedance shift |
| PD57018 | 18 W @ 945 MHz, same PowerSO-10RF package, Rth(j-c) = 1.0 °C/W, ID(max) = 3.5 A | Lower power rating, identical footprint and bias scheme, reduced CISS (42 pF) | Choose for mid-power DAS nodes or lab validation boards where thermal margin exceeds requirement |
Compared with MRF6V2750N, PD57070S offers superior low-frequency gain flatness and proven reliability in 900 MHz base station deployments; compared with PD57018, it provides 3.9× higher output power while maintaining identical thermal interface and PCB layout compatibility.
Availability
PD57070S is available at Aetrix Electronics and suitable for cellular infrastructure, public safety radio, ISM band systems, and wireless repeaters requiring stable component supply and long-term manufacturing continuity.
Supply support for PD57070S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF technologies for industrial, automotive, and communications markets.
PD57070S belongs to ST's LdmoST Plastic family of RF power transistors, engineered specifically for high-reliability, high-efficiency cellular infrastructure amplifiers operating below 1.5 GHz.
FAQ
What is the maximum safe operating frequency for PD57070S?
The PD57070S is characterized and specified up to 1500 MHz, with verified performance including S-parameters and power gain down to that frequency. At 1500 MHz, typical output power drops to ~22 W at 28 V, but the device remains electrically stable and thermally manageable within absolute maximum ratings.
Can PD57070S be used in Class C or D amplifier configurations?
No - PD57070S is optimized for Class AB operation with 250 mA quiescent drain current. Its lateral LDMOS structure and gate threshold characteristics are not suited for switching-mode (Class C/D) use; attempting such operation risks thermal runaway and parametric shift due to lack of body diode clamping and limited dV/dt immunity.
Is the PowerSO-10RF package RoHS-compliant and lead-free?
Yes - PD57070S conforms to RoHS Directive 2011/65/EU and is manufactured with lead-free terminations and halogen-free molding compound. The straight-lead variant (PD57070S) uses matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).
What is the recommended gate resistor value for stability in 900 MHz operation?
ST recommends a 120 Ω non-inductive surface-mount resistor (R3 in test circuit schematic) between driver output and gate terminal. This value suppresses VHF/UHF oscillations while preserving gain flatness; values below 100 Ω risk instability, and above 150 Ω degrade gain by >0.8 dB at 945 MHz.
PD57070S Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.7dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 7A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 70W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD57070S FAQ
1.How can I place an order for PD57070S through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57070S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57070S reliable?
The price and inventory of PD57070S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57070S is usually 5 days.
3.What payment methods are accepted for PD57070S?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57070S transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57070S?
PD57070S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57070S order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57070S?
For technical support, including PD57070S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57070S requirements.
6.How does Aetrix verify that PD57070S is sourced from the original manufacturer or authorized distributors?
All PD57070S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57070S meets industry standards.
7.What is the process for return or replacement of PD57070S?
All PD57070S units undergo pre-shipment inspection (PSI). If there is an issue with PD57070S, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57070S part is unused and in its original packaging.
Return procedure for PD57070S:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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