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STMicroelectronics PD57070S-E
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- Part No.:
- PD57070S-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD57070S-E.pdf
- Description:
- RF MOSFET LDMOS 28V POWERSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:3,358
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Product details
Overview
PD57070S-E from STMicroelectronics is a 70 W N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, designed for broadband base station amplifiers operating up to 1 GHz at 28 V supply. It delivers 14.7 dB power gain and 50% drain efficiency at 945 MHz with 250 mA quiescent bias, housed in the JEDEC-approved PowerSO-10RF (straight-lead) plastic package.
For engineers reviewing the PD57070S-E datasheet, PD57070S-E pinout, PD57070S-E application, or PD57070S-E equivalent, key selection considerations include its 65 V drain-source breakdown voltage, 1.0 °C/W junction-to-case thermal resistance, 91 pF input capacitance at 1 MHz, and verified 5:1 load mismatch tolerance - all critical for high-reliability cellular infrastructure PA design.
Technical Context
This device implements ST's LDMOS technology optimized for RF linearity and thermal stability in commercial wireless infrastructure. Its lateral structure enables excellent gain flatness across 890–960 MHz and supports Class AB operation with stable bias under wide temperature variation.
The PowerSO-10RF package integrates a thermally enhanced copper leadframe and optimized RF grounding geometry, enabling direct PCB mounting without heatsink for moderate-duty applications while maintaining <1.0 Ω source inductance and controlled impedance paths per Figure 1 and Table 13.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 945 MHz | 70 W - Sustained RF output power into 50 Ω load at 28 V, enabling macrocell BTS final-stage amplification |
| Power Gain | 14.7 dB - Measured small-signal gain at POUT = 70 W, ensuring minimal driver stage complexity |
| V(BR)DSS | 65 V - Absolute maximum drain-source voltage, providing 2.3× safety margin over 28 V rail |
| RthJC | 1.0 °C/W - Junction-to-case thermal resistance, enabling direct thermal coupling to heatsink or copper pour |
| CISS | 91 pF @ 1 MHz - Input capacitance defining matching network size and bandwidth trade-offs |
| Drain Efficiency | 50 % @ POUT = 70 W - DC-to-RF conversion efficiency at full output, reducing thermal load and power supply demand |
| Load Mismatch Tolerance | 5:1 VSWR - Verified robust operation under worst-case antenna mismatch across all phase angles |
Pinout & Package
PD57070S-E uses the PowerSO-10RF straight-lead package (JEDEC MO-263 variant), featuring a thermally optimized copper leadframe with exposed drain paddle and three isolated terminals: Gate, Source, and Drain. The straight-lead configuration simplifies automated placement and improves coplanarity control during reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | High-impedance input requiring low-inductance gate drive path; max ±20 V rating defines ESD protection limits |
| Source | Common reference node | Low-inductance connection point for RF return path and bias decoupling; tied directly to exposed drain paddle ground plane |
| Drain | RF power output terminal | Connected to large-area copper paddle for thermal dissipation; requires impedance-matched 50 Ω output trace and external DC blocking |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | Normalized VGS drift ≤ ±3% over –25°C to +100°C case temperature (Fig. 5), enabling stable bias without active compensation |
| RF linearity | IMD3 < –30 dBc at POUT = 60 W (945 MHz), supporting multi-carrier WCDMA and LTE signals with low adjacent channel leakage |
| SMD plastic packaging | PowerSO-10RF meets JEDEC MO-263 mechanical standards and J-STD-020B MSL Level 3, enabling standard reflow assembly |
| Gain flatness | ±0.5 dB variation across 890–960 MHz band (Fig. 7), reducing need for frequency-dependent correction networks |
| Input return loss | ≥10 dB from 890–960 MHz (Fig. 9), easing broadband input matching with minimal tuning components |
Applications
| Cellular Base Station PA | ISM Band Amplifier |
|---|---|
Use Scenario: Final-stage power amplifier in 900 MHz macrocell BTS supporting 4-carrier WCDMA. IC Role / Device Role / Timing Role: Common-source RF power transistor delivering 70 W saturated output with 50% efficiency and 5:1 VSWR tolerance. Use Value: Eliminates need for external VSWR protection circuitry while maintaining linearity and thermal reliability over ambient range. |
Use Scenario: High-efficiency amplifier in 915 MHz industrial RFID reader transmitter. IC Role / Device Role / Timing Role: Linear RF power stage operating at 28 V with 14.7 dB gain and 945 MHz center frequency. Use Value: Enables compact, air-cooled design due to 1.0 °C/W RthJC and MSL-3 compliant packaging for automated manufacturing. |
| Public Safety Radio | Wireless Infrastructure Test Equipment |
Use Scenario: PA module in 896–941 MHz TETRA base station repeater requiring high reliability. IC Role / Device Role / Timing Role: Lateral LDMOS transistor with 65 V V(BR)DSS and 165°C max junction temperature. Use Value: Supports extended duty cycle operation under high ambient temperatures without derating beyond datasheet limits. |
Use Scenario: Signal generator output stage in benchtop RF test equipment covering 800–1000 MHz. IC Role / Device Role / Timing Role: Broadband power amplifier with flat gain response and low IMD3 for calibrated signal generation. Use Value: Reduces calibration overhead by maintaining consistent gain and distortion performance across frequency sweep. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2010N | Higher POUT (100 W), higher V(BR)DSS (100 V), but larger TO-270WB package and 2.5x higher CISS (225 pF) | Requires larger heatsink and more complex input matching; suited for higher-power macrocells | Select when >70 W output or >65 V headroom is required; avoid if board space or matching simplicity is critical |
| PD57018S-E | Lower POUT (18 W), same PowerSO-10RF package, identical pinout, 30% lower CISS (63 pF) | Designed for microcell/small cell applications; not suitable for macrocell final-stage use | Choose for cost-sensitive, lower-power nodes where thermal budget and footprint match PD57070S-E but output is reduced |
Compared with MRF6V2010N and PD57018S-E, PD57070S-E uniquely balances 70 W output, 1.0 °C/W thermal resistance, and compact SMD packaging - making it optimal for space-constrained, thermally demanding macrocell PA designs where 65 V rating suffices.
Availability
PD57070S-E is available at Aetrix Electronics and suitable for cellular base station power amplifiers, public safety radio transmitters, ISM band equipment, and RF test instrumentation requiring stable component supply and long-term lifecycle support.
Supply support for PD57070S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with R&D and manufacturing operations across Europe, Asia, and the Americas, serving automotive, industrial, and communications markets.
PD57070S-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial wireless infrastructure applications operating up to 1 GHz.
FAQ
What is the recommended gate bias voltage for linear operation?
The typical gate-source voltage for 250 mA quiescent drain current is 3.2 V (Table 4 shows VGS(Q) = 2.0–5.0 V). For linear Class AB operation at 945 MHz, ST recommends setting VGS to achieve IDQ = 250 mA using a stable, low-noise bias network - confirmed by Fig. 4 and application note AN1294.
Can PD57070S-E be used in push-pull configuration?
Yes - its matched N-channel lateral structure and symmetric thermal profile support push-pull operation. However, layout must ensure equal gate drive path length and impedance, and the 5:1 VSWR tolerance applies per device, not per pair. Refer to S-parameter data in Tables 9–12 for phase alignment verification.
Is the PowerSO-10RF package RoHS and REACH compliant?
Yes - PD57070S-E carries ECOPACK® compliance certification per ST's environmental program. The PowerSO-10RF package is lead-free, halogen-free, and conforms to RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as documented on www.st.com/ecopack.
What is the maximum safe operating frequency for continuous-wave operation?
The device is characterized and rated for reliable CW operation up to 1 GHz (per "Description" section and Figure 6–14). At 1.5 GHz, gain drops below 10 dB and efficiency falls sharply; therefore, 1 GHz is the validated upper limit for full-rated 70 W output and thermal performance.
PD57070S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 945MHz
- Gain:
- 14.7dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 7A
- Noise Figure:
- -
- Current - Test:
- 250 mA
- Power - Output:
- 70W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD57070S-E FAQ
1.How can I place an order for PD57070S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD57070S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD57070S-E reliable?
The price and inventory of PD57070S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD57070S-E is usually 5 days.
3.What payment methods are accepted for PD57070S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD57070S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD57070S-E?
PD57070S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD57070S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD57070S-E?
For technical support, including PD57070S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD57070S-E requirements.
6.How does Aetrix verify that PD57070S-E is sourced from the original manufacturer or authorized distributors?
All PD57070S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD57070S-E meets industry standards.
7.What is the process for return or replacement of PD57070S-E?
All PD57070S-E units undergo pre-shipment inspection (PSI). If there is an issue with PD57070S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD57070S-E part is unused and in its original packaging.
Return procedure for PD57070S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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