STMicroelectronics PD84006-E

Overview

PD84006-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF plastic package, rated for 25 V drain-source voltage, 5 A continuous drain current, and 59 W power dissipation at 70 °C case temperature. It delivers 6 W output power with 13 dB gain at 870 MHz and features ESD protection per Human Body Model Class 2 and Machine Model Class M3.

For engineers reviewing the PD84006-E datasheet, PD84006-E pinout, PD84006-E application, or PD84006-E equivalent, key selection criteria include broadband RF gain linearity at 7–9.5 V supply, thermal resistance of 1.6 °C/W (junction-to-case), load mismatch tolerance up to 20:1 VSWR, and compatibility with SMD assembly in portable radio and UHF RFID reader front-end stages.

Technical Context

The PD84006-E employs ST's LDMOS technology optimized for high-gain, broadband RF amplification up to 1 GHz in common-source configuration. Its static characteristics include gate threshold voltage of 3.0–4.3 V and on-resistance of 0.34 V at 1 A, while dynamic performance is characterized by 5–6 W P3dB output and 15 dB small-signal gain at 870 MHz.

Designed for 7 V operation in commercial and industrial RF systems, it supports stable performance under wide load mismatch (20:1 VSWR) and exhibits low input capacitance (CISS = 40 pF) and feedback capacitance (CRSS = 1.45 pF), enabling robust impedance matching and harmonic suppression in UHF bands.

Key Specifications

Pinout & Package

PD84006-E is housed in PowerSO-10RF (formed lead, gull-wing) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring an exposed thermal pad and optimized RF layout for minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF158G and PD57003-E, the PD84006-E uniquely balances 6 W output, 7 V operation, SMD manufacturability, and 20:1 VSWR tolerance-making it optimal for space-constrained, battery-aware UHF transmitters where thermal density and assembly yield are critical.

Availability

PD84006-E is available at Aetrix Electronics and suitable for portable radio transmitter modules, UHF RFID reader designs, and industrial wireless sensor hubs requiring stable component supply, JEDEC-compliant SMD packaging, and proven RF reliability in volume production since 2009.

Supply support for PD84006-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and RF solutions for industrial, automotive, and consumer markets.

The PD84006-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for broadband, high-efficiency amplification in portable and infrastructure UHF systems operating below 1 GHz.

FAQ

What is the recommended gate bias voltage for PD84006-E in Class AB operation?

The datasheet specifies VGS(Q) = 3.0–4.3 V at IDQ = 150 mA and VDS = 10 V. For stable Class AB operation at 7.5 V supply, a gate bias network delivering 3.8 V ±0.2 V is recommended to maintain 150 mA quiescent current across temperature and process variation.

Can PD84006-E operate reliably at 9.5 V drain supply?

Yes - the device is characterized up to 9.5 V in load mismatch testing (20:1 VSWR) and delivers 8 W output at that voltage. However, junction temperature must be monitored: at 9.5 V and full P3dB, power dissipation exceeds 59 W unless case temperature is actively maintained below 60 °C.

Is external ESD protection required despite built-in HBM Class 2 rating?

No external ESD protection is required for standard handling and PCB assembly. The integrated protection meets IEC 61000-4-2 Level 2 (4 kV contact), but system-level surge events (e.g., lightning-induced transients) still require board-level TVS diodes at antenna ports or connectors.

How does PowerSO-10RF package compare to traditional TO-247 in RF thermal performance?

PowerSO-10RF achieves 1.6 °C/W RthJC - comparable to TO-247 with mica insulator - but with 60% smaller footprint and no isolation hardware. Its exposed copper pad enables direct thermal interface to PCB copper pours, eliminating thermal interface material in many portable designs.