STMicroelectronics PD84008-E

Overview

PD84008-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF plastic package, rated for 25 V drain-source voltage, 7 A continuous drain current, and 79 W power dissipation at 70 °C case temperature. It delivers 8 W output power with 14.7 dB gain at 870 MHz under 7.5 V supply and 250 mA quiescent bias, optimized for portable radio and broadband industrial RF amplification.

For engineers reviewing the PD84008-E datasheet, PD84008-E pinout, PD84008-E application, or PD84008-E equivalent, key selection considerations include its 1.2 °C/W junction-to-case thermal resistance, ESD protection per HBM Class 2/MM Class M3, 56 pF input capacitance at 7 V, and compatibility with 870 MHz ISM-band infrastructure and mobile radio transmitters requiring high linearity and thermal stability.

Technical Context

This LDMOS transistor operates in common-source configuration with gate-source voltage range of –0.5 V to +15 V and exhibits typical threshold voltage of 3.2–4.8 V at 10 V drain-source and 250 mA drain current. Its dynamic performance is characterized at 870 MHz with 7.5 V supply, delivering 55–65% drain efficiency at P3dB and supporting 20:1 load mismatch tolerance.

The device uses ST's proprietary LDMOS process on silicon, mounted in the JEDEC-approved PowerSO-10RF SMD package - the first high-power plastic RF package qualified for reflow assembly. Its impedance data shows ZIN = 0.38 + j0.94 Ω and ZDL = 1.36 – j0.48 Ω at 870 MHz, enabling broadband matching without external harmonic suppression.

Key Specifications

Pinout & Package

PD84008-E is housed in the PowerSO-10RF (formed lead) plastic package - a JEDEC-qualified surface-mount RF power package with integrated heatsink tab and gull-wing leads. The package features 10 terminals arranged in two rows, with the exposed metal die pad serving as the drain connection and thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF158 and PD57008-E, PD84008-E offers optimal trade-off between 7.5 V operation simplicity, 8 W linear output, and 1.2 °C/W thermal resistance - making it uniquely suited for compact, battery-conscious 870 MHz portable radios where supply voltage and board space are constrained.

Availability

PD84008-E is available at Aetrix Electronics and suitable for portable land mobile radio, ISM-band transmitter modules, and commercial two-way radio base stations requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for PD84008-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

PD84008-E belongs to ST's LdmoST plastic RF power transistor family, developed specifically for high-efficiency, thermally robust, surface-mountable RF amplification in 400–1000 MHz commercial and industrial wireless infrastructure.

FAQ

What is the recommended gate bias voltage for linear operation at 870 MHz?

The datasheet specifies VGS(Q) = 3.2–4.8 V at ID = 250 mA and VDS = 10 V. For linear Class AB operation at 870 MHz, a gate bias of 4.2 V ±0.2 V is recommended to maintain 250 mA quiescent current, ensuring optimal gain flatness and intermodulation distortion performance across temperature.

Can PD84008-E be used in 900 MHz GSM applications?

No - PD84008-E is characterized and optimized for 870 MHz operation, with gain and efficiency dropping significantly above 900 MHz. Its impedance data (ZIN/ZDL) and P3dB performance are validated only up to 1 GHz, and no GSM-specific linearity or spectral mask compliance data is provided in the datasheet.

Is the PowerSO-10RF package compatible with standard reflow soldering profiles?

Yes - PowerSO-10RF is qualified for Pb-free reflow per JEDEC J-STD-020C, with peak temperature ≤260 °C and MSL Level 3 handling. The package's gull-wing leads and thermal pad require controlled ramp rates and soak time to ensure void-free solder joints on the drain tab.

Does PD84008-E require external ESD protection on the gate pins?

No - the device integrates on-chip ESD protection rated to HBM Class 2 (2 kV) and MM Class M3 (200 V), sufficient for standard PCB handling and assembly. Additional external TVS diodes are unnecessary unless operating in high-static environments exceeding these thresholds.