STMicroelectronics PD84008S-E

Overview

PD84008S-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF straight-lead package, delivering 8 W output power with 14.7 dB gain at 870 MHz under 7.5 V supply and 250 mA quiescent drain current. It features ESD protection (HBM Class 2, MM Class M3), 25 V drain-source breakdown voltage, and 1.2 °C/W junction-to-case thermal resistance. Designed for portable radio transmitters requiring broadband linearity and thermal stability up to 1 GHz.

For engineers reviewing the PD84008S-E datasheet, PD84008S-E pinout, PD84008S-E application, or PD84008S-E equivalent, this page provides verified electrical specifications, thermal performance data, RF impedance values at 870 MHz, PowerSO-10RF mechanical dimensions, and validated alternative LDMOS transistors for portable radio and industrial RF amplifier designs.

Technical Context

This device operates in common-source configuration with gate-controlled enhancement-mode conduction, optimized for broadband RF amplification up to 1 GHz. Its lateral LDMOS structure enables high gain (13–16.2 dB) and efficiency (55–65% at P3dB) at 870 MHz while maintaining stable DC bias points across temperature.

The PowerSO-10RF straight-lead package integrates thermal vias and copper-exposed drain pad for low R_thJC (1.2 °C/W), enabling reliable 79 W power dissipation at T_CASE = 70 °C. Input/output impedance matching is supported by documented Z_IN = 0.38 + j0.94 Ω and Z_DL = 1.36 – j0.48 Ω at 870 MHz.

Key Specifications

Pinout & Package

PD84008S-E uses the PowerSO-10RF straight-lead plastic package (JEDEC-compliant SMD RF power package), featuring exposed drain pad for thermal conduction and three formed terminals: Gate, Source, and Drain. The straight-lead variant simplifies automated placement and eliminates gull-wing reflow concerns in high-frequency PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD84008-E and MRF300AN, PD84008S-E offers identical RF performance with simplified SMT placement, lower thermal resistance than MRF300AN, and tighter gain consistency across production lots due to ST's lateral LDMOS process control.

Availability

PD84008S-E is available at Aetrix Electronics and suitable for portable FM transceivers, land mobile radio base stations, and UHF RFID readers requiring stable component supply, JEDEC-compliant SMD packaging, and proven 870 MHz RF power performance.

Supply support for PD84008S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power transistors, sensors, and analog ICs for industrial, automotive, and consumer markets.

PD84008S-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for high-linearity, thermally robust broadband amplification in portable and infrastructure radio equipment.

FAQ

What is the recommended gate bias voltage for PD84008S-E in Class AB operation?

The datasheet specifies V_GS(Q) = 3.2–4.8 V at I_D = 250 mA and V_DS = 10 V. For stable Class AB operation at 7.5 V drain supply, a fixed 4.2 V gate bias with series resistor and bypass capacitor is recommended to maintain 250 mA quiescent current across temperature.

Can PD84008S-E operate reliably at 13.6 V drain supply?

Yes - the absolute maximum V_(BR)DSS is 25 V, and the device is characterized for operation at 13.6 V in common-source mode per the datasheet description. At this voltage, output power increases beyond 8 W, but thermal management must be verified using R_thJC = 1.2 °C/W and derated P_DISS.

How does the straight-lead PowerSO-10RF differ electrically from the formed-lead version?

There is no electrical difference: PD84008S-E and PD84008-E share identical die, silicon process, and RF specifications. The straight-lead variant only modifies lead geometry for improved placement accuracy and reduced reflow-induced stress on the package body.

Is PD84008S-E compliant with RoHS and REACH regulations?

Yes - the device carries ECOPACK® environmental compliance certification per ST's public documentation. It meets 2002/95/EC (RoHS) and subsequent EU directives, with lead-free terminations and halogen-free molding compound confirmed in ST's official product change notices.