My Inquiry
My Account
STMicroelectronics PD84010-E
- Part No.:
- PD84010-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
PD84010-E.pdf
- Description:
- RF MOSFET LDMOS 7.5V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:9,185
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD84010-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1 GHz. It delivers 10 W output power with 14.3 dB gain at 870 MHz under 7.5 V supply, features ESD protection, and uses PowerSO-10RF plastic SMD packaging optimized for RF performance and thermal stability.
For engineers reviewing the PD84010-E datasheet, PD84010-E pinout, PD84010-E application, or PD84010-E equivalent, this device is selected for portable radio transmitters, base station driver stages, and broadband RF amplifiers where high linearity, thermal reliability, and SMD manufacturability are required at 700–960 MHz bands.
Technical Context
The PD84010-E operates in common-source configuration with gate-controlled enhancement-mode conduction, supporting DC–1 GHz operation. Its LDMOS structure enables high gain (15–16.3 dB), high efficiency (60–73% at P3dB), and robust load mismatch tolerance (20:1 VSWR) at 870 MHz.
Thermal design is enabled by low junction-to-case resistance (1.0 °C/W) and maximum junction temperature of 165 °C. The PowerSO-10RF package integrates formed leads for mechanical stability and RF-optimized leadframe geometry to minimize parasitic inductance and improve impedance matching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 870 MHz | 10 W typical - sufficient for Class AB driver-stage amplification in UHF portable radios |
| Gain @ 870 MHz | 14.3 dB - enables single-stage amplification without cascaded gain blocks |
| VDS(max) | 40 V - supports safe operation with 7.5 V supply and transient voltage margins |
| RthJC | 1.0 °C/W - allows 95 W power dissipation at 70 °C case temperature |
| CISS / COSS / CRSS | 77 / 54 / 2.3 pF @ 7 V - defines input/output capacitance and feedback behavior for impedance matching networks |
| ESD Class | HBM Class 2, MM Class M3 - provides handling robustness during PCB assembly |
| Frequency Range | DC to 1 GHz - covers GSM, DCS, PCS, and ISM 868/915 MHz bands |
Pinout & Package
PD84010-E is housed in the PowerSO-10RF plastic SMD package with formed gull-wing leads. This JEDEC-approved high-power RF package features optimized leadframe geometry, low-inductance source grounding, and resin-molded construction rated MSL 3 per J-STD-020B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Input terminal for RF signal drive; requires external DC blocking and bias network |
| Source | Common reference node | Low-impedance RF ground return path; multiple pins connected internally for thermal and current handling |
| Drain | Power output node | High-current RF output terminal; connects to output matching network and heatsink via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | 165 °C max junction temperature + 1.0 °C/W RthJC enables sustained 10 W operation with passive heatsinking |
| RF linearity | 73% drain efficiency at P3dB ensures low distortion in AM/FM and digital modulation schemes |
| Load mismatch tolerance | 20:1 VSWR survivability at full power prevents failure in antenna detuning events |
| SMD manufacturability | PowerSO-10RF gull-wing leads support automated reflow assembly and optical inspection |
Applications
| Portable Radio Transmitter | UHF Base Station Driver |
|---|---|
Use Scenario: Handheld two-way radios operating in 869–894 MHz band requiring compact, battery-efficient RF power amplification. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 10 W POUT with high gain and linearity. Use Value: Enables extended battery life and reliable voice transmission under varying antenna conditions due to 20:1 VSWR tolerance and 73% efficiency. | Use Scenario: Low-tier cellular infrastructure repeaters and distributed antenna systems needing cost-effective, surface-mountable driver amplifiers. IC Role / Device Role / Timing Role: Driver-stage amplifier preceding final GaN or LDMOS PA, operating at 7.5 V supply. Use Value: Reduces bill-of-materials count by eliminating discrete bias networks and simplifies thermal management with integrated source grounding. |
| ISM Band Amplifier | Land Mobile Radio (LMR) |
Use Scenario: Industrial telemetry and remote monitoring equipment using 902–928 MHz ISM band with FCC Part 15 compliance requirements. IC Role / Device Role / Timing Role: Linear RF power stage ensuring spectral purity and adjacent channel leakage ratio (ACLR) compliance. Use Value: Achieves >60% efficiency and <−45 dBc harmonic suppression without external linearization circuitry. | Use Scenario: Public safety radio systems (e.g., TETRA, P25) requiring rugged, field-deployable transceivers with wide temperature range operation. IC Role / Device Role / Timing Role: High-reliability RF PA core operating across −40 °C to +85 °C ambient with stable gain flatness. Use Value: Maintains 14.3 dB gain ±0.5 dB over temperature due to LDMOS process uniformity and thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6P21140HR5 | Higher POUT (140 W), 28 V operation, TO-270WB package - requires different biasing and heatsinking | Targeted at macro base station final PA, not portable or driver-stage use | Select only when >10 W output and 28 V architecture are mandatory; incompatible with 7.5 V designs |
| PD57018-E | Same PowerSO-10RF package, 18 W POUT at 945 MHz, higher VDD (28 V), improved efficiency (75%) | Designed for higher-frequency LTE bands; less suitable below 800 MHz due to gain roll-off | Prefer for 900 MHz+ infrastructure upgrades; verify impedance match at 870 MHz before substitution |
Compared with MRF6P21140HR5 and PD57018-E, PD84010-E offers optimal trade-off of size, 7.5 V compatibility, and 10 W capability for portable and driver-stage roles-where lower voltage, compact footprint, and thermal manageability outweigh raw power scaling.
Availability
PD84010-E is available at Aetrix Electronics and suitable for portable radio transmitters, UHF base station drivers, and ISM band amplifiers requiring stable component supply, long-term lifecycle support, and JEDEC-compliant SMD packaging.
Supply support for PD84010-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF solutions for industrial, automotive, and communications markets.
PD84010-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for high-linearity, thermally robust, surface-mountable amplification in commercial wireless infrastructure and portable radio equipment.
FAQ
What is the recommended gate bias voltage for PD84010-E in Class AB operation?
The datasheet specifies VGS(Q) = 3.4–4.6 V at ID = 250 mA and VDS = 10 V. For stable Class AB operation at IDQ = 300 mA, a gate bias of 4.2 V is recommended using a resistive divider or active bias circuit to maintain quiescent current across temperature.
Can PD84010-E be used at 28 V supply for higher output power?
No. Absolute maximum VDS is 40 V, but the device is characterized and optimized for 7.5 V operation. At 28 V, gate oxide stress, thermal runaway risk, and gain compression increase significantly. ST does not specify performance above 9.5 V, and doing so voids reliability guarantees.
Is the PowerSO-10RF package lead-free and RoHS compliant?
Yes. PD84010-E is manufactured in ST's ECOPACK®-compliant PowerSO-10RF package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries the "ECOPACK2" designation, indicating halogen-free molding compound and lead-free terminations.
How is thermal management implemented on the PD84010-E PCB layout?
The PowerSO-10RF package features an exposed drain pad that must be soldered to a large copper thermal pad (≥200 mm²) connected to internal ground planes via ≥6 thermal vias (0.3 mm diameter). This achieves the specified 1.0 °C/W RthJC and prevents junction temperature exceedance at full 10 W output.
PD84010-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 870MHz
- Gain:
- 16.3dB
- Voltage - Test:
- 7.5 V
- Current Rating (Amps):
- 8A
- Noise Figure:
- -
- Current - Test:
- 300 mA
- Power - Output:
- 2W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
PD84010-E FAQ
1.How can I place an order for PD84010-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD84010-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD84010-E reliable?
The price and inventory of PD84010-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD84010-E is usually 5 days.
3.What payment methods are accepted for PD84010-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD84010-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD84010-E?
PD84010-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD84010-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD84010-E?
For technical support, including PD84010-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD84010-E requirements.
6.How does Aetrix verify that PD84010-E is sourced from the original manufacturer or authorized distributors?
All PD84010-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD84010-E meets industry standards.
7.What is the process for return or replacement of PD84010-E?
All PD84010-E units undergo pre-shipment inspection (PSI). If there is an issue with PD84010-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD84010-E part is unused and in its original packaging.
Return procedure for PD84010-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD84010-E Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
