Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics PD84010S-E

Part No.:
PD84010S-E
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
PowerSO-10 Exposed Bottom Pad
Datasheet:
AetrixPD84010S-E.pdf
Description:
RF MOSFET LDMOS 7.5V PWRSO-10RF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,320

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PD84010S-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1 GHz. It delivers 10 W output power with 14.3 dB gain at 870 MHz under 7.5 V supply, features ESD protection (HBM Class 2, MM Class M3), and operates with excellent thermal stability in the PowerSO-10RF plastic package.

For engineers reviewing the PD84010S-E datasheet, PD84010S-E pinout, PD84010S-E application, or PD84010S-E equivalent, this device is selected for portable radio transmitters, base station driver stages, and broadband amplifier designs requiring high linearity, stable gain, and SMD-compatible high-power RF packaging.

Technical Context

This LDMOS transistor uses lateral structure for improved thermal distribution and gain flatness across 870 MHz–1 GHz. Its common-source configuration supports single-ended push-pull or driver-stage topologies with DC bias at IDQ = 300 mA and VDD = 7.5 V.

Designed for RF power amplification, it exhibits low input/output impedance (ZIN = 0.35 + j1.1 Ω, ZDL = 1.53 – j0.23 Ω at 870 MHz), high efficiency (60–73% at P3dB), and robust load mismatch tolerance (20:1 VSWR survivability).

Key Specifications

Parameter Value and Actual Design Meaning
Output Power (P3dB) 10–12 W at 870 MHz: enables Class AB linear amplification for 10 W RF output stage without compression.
Small-Signal Gain 15–16.3 dB at 870 MHz: provides sufficient voltage gain for driver-level amplification before final PA stage.
Drain-Source Voltage (V(BR)DSS) 40 V: supports operation up to 13.6 V supply with margin for transient spikes in RF switching environments.
Junction-to-Case Thermal Resistance 1.0 °C/W: enables 95 W power dissipation at TCASE = 70 °C - critical for compact heatsink integration.
Input Capacitance (CISS) 77 pF at VDS = 7 V: defines matching network complexity and gate drive requirements at UHF frequencies.
ESD Rating HBM Class 2 (≥2 kV), MM Class M3: ensures handling robustness during SMT assembly and board-level testing.
Operating Frequency Range DC to 1 GHz: validated performance up to 870 MHz with usable gain extension into low-UHF band.

Pinout & Package

The PD84010S-E is housed in the PowerSO-10RF plastic package - ST's JEDEC-approved, high-power SMD RF package with gull-wing formed leads. It features integrated thermal pad on underside for direct PCB copper thermal coupling.

Pin/Terminal Circuit Role Design Meaning
Gate (G) Control electrode High-impedance input requiring DC blocking and gate bias network; sensitive to ESD per HBM Class 2 spec.
Source (S) Common reference node Connected to RF ground plane; serves as return path for drain current and thermal conduction path via exposed pad.
Drain (D) Power output terminal High-current RF output node; requires low-inductance layout and external matching network for 50 Ω system interface.

Key Features

Feature Design Value
Plastic SMD RF package PowerSO-10RF enables automated assembly, eliminates lead-frame thermal bottlenecks, and supports >90 W thermal dissipation with proper PCB copper area.
Linearity performance 73% drain efficiency at P3dB and low intermodulation distortion make it suitable for narrowband FM/PM portable radio transmitters.
Thermal stability Positive temperature coefficient of gain and low RthJC (1.0 °C/W) minimize thermal runaway risk in continuous-wave operation.
Load mismatch tolerance Survives 20:1 VSWR at all phase angles under 20 W output - critical for antenna-coupled systems without circulators.

Applications

Portable Radio Transmitter UHF Base Station Driver

Use Scenario: Handheld two-way radios operating in 860–870 MHz ISM band requiring compact, battery-efficient 10 W RF output.

IC Role / Device Role / Timing Role: Final-stage RF power amplifier in Class AB configuration, driven by low-power pre-driver IC.

Use Value: Delivers 14.3 dB gain and 73% efficiency at 870 MHz, reducing heat generation and extending battery life vs. older GaAs alternatives.

Use Scenario: Driver amplifier in multi-carrier UHF base station subsystems where linearity and gain flatness across 850–900 MHz are required.

IC Role / Device Role / Timing Role: Medium-power RF driver stage preceding GaN final PA, configured in common-source topology with fixed 300 mA quiescent bias.

Use Value: Maintains ≥15 dB small-signal gain across 870 MHz with <0.5 dB variation, simplifying broadband matching network design.

Industrial Wireless Sensor Hub ISM Band Repeater Module

Use Scenario: High-reliability wireless sensor gateway transmitting telemetry over 868 MHz European ISM band in factory automation environments.

IC Role / Device Role / Timing Role: Linear RF PA supporting 16-QAM modulation with ACPR < –35 dBc, mounted directly on thermally enhanced 4-layer PCB.

Use Value: ESD-hardened gate and 20:1 VSWR tolerance ensure field robustness against antenna detuning and ESD events during maintenance.

Use Scenario: Bidirectional repeater for 869–870 MHz public safety communications, requiring symmetric uplink/downlink amplification with minimal added noise.

IC Role / Device Role / Timing Role: Duplex-capable driver amplifier in TDD configuration, leveraging low CISS (77 pF) and fast turn-on/off characteristics.

Use Value: Input/output impedance data (ZIN/ZDL) provided at 870 MHz enables precise 50 Ω microstrip matching for <0.3 dB insertion loss in repeater front-end.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
MRF158G Higher V(BR)DSS (65 V), lower gain (12.5 dB @ 870 MHz), TO-220FP package Requires through-hole mounting and larger heatsink; better suited for 28 V base station applications Select when higher supply voltage headroom or legacy through-hole assembly is required.
PD57018-E Newer ST LDMOS, 18 W P3dB, 16.5 dB gain @ 870 MHz, same PowerSO-10RF package Higher output capability but increased bias current (IDQ = 500 mA); needs revised thermal layout Select when system requires >10 W output with minimal footprint change and compatible PCB land pattern.

Compared with MRF158G and PD57018-E, PD84010S-E offers optimal balance of 10 W output, 14.3 dB gain, and SMD manufacturability - making it preferred for cost-sensitive, space-constrained portable radio designs where 7.5 V operation and thermal efficiency are prioritized.

Availability

PD84010S-E is available at Aetrix Electronics and suitable for portable radio transmitters, UHF base station drivers, and industrial wireless sensor hubs requiring stable component supply and long-term production continuity.

Supply support for PD84010S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF solutions for industrial, automotive, and communications markets.

PD84010S-E belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for high-gain, broadband commercial and industrial amplifiers operating up to 1 GHz with SMD reliability.

FAQ

What is the recommended gate bias voltage for linear operation at 870 MHz?

The datasheet specifies VGS(Q) = 3.4–4.6 V at ID = 250 mA and VDS = 10 V. For linear Class AB operation at IDQ = 300 mA and VDD = 7.5 V, a gate bias of 4.2 V ±0.2 V is recommended, implemented via resistive divider with bypass capacitor to suppress RF feedback.

Can PD84010S-E be used in push-pull configuration?

Yes - its common-source architecture and matched gain/phase characteristics support push-pull implementation. The PowerSO-10RF package allows symmetrical PCB layout, and thermal resistance uniformity ensures balanced channel loading. Bias networks must be independently tuned per device to maintain amplitude/phase balance.

Is the PowerSO-10RF package RoHS-compliant and lead-free?

Yes - PD84010S-E is offered in ECOPACK®-compliant PowerSO-10RF packaging, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020B MSL Level 3 moisture sensitivity requirements. Lead finish is matte tin, and solder reflow profile follows IPC/JEDEC J-STD-020.

What is the maximum safe operating frequency for full-rated output power?

Full 10 W P3dB output is specified at 870 MHz. Performance remains usable up to 1 GHz, but gain drops to ~12 dB and efficiency falls below 60% above 950 MHz. For reliable 10 W operation, limit use to ≤900 MHz with verified matching network and thermal derating.

PD84010S-E Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
PowerSO-10 Exposed Bottom Pad
Packaging:
Tube
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
870MHz
Gain:
16.3dB
Voltage - Test:
7.5 V
Current Rating (Amps):
8A
Noise Figure:
-
Current - Test:
300 mA
Power - Output:
2W
Voltage - Rated:
40 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
PowerSO-10RF (Straight Lead)

PD84010S-E FAQ

1.How can I place an order for PD84010S-E through Aetrix?

Please submit a Request for Quotation (RFQ) for PD84010S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PD84010S-E reliable?

The price and inventory of PD84010S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD84010S-E is usually 5 days.

3.What payment methods are accepted for PD84010S-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD84010S-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PD84010S-E?

PD84010S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PD84010S-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PD84010S-E?

For technical support, including PD84010S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD84010S-E requirements.

6.How does Aetrix verify that PD84010S-E is sourced from the original manufacturer or authorized distributors?

All PD84010S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD84010S-E meets industry standards.

7.What is the process for return or replacement of PD84010S-E?

All PD84010S-E units undergo pre-shipment inspection (PSI). If there is an issue with PD84010S-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PD84010S-E part is unused and in its original packaging.

Return procedure for PD84010S-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PD84010S-E Tags

  • PD84010S-E
  • PD84010S-E PDF
  • PD84010S-E Datasheet
  • PD84010S-E Specifications
  • PD84010S-E Images
  • STMicroelectronics
  • STMicroelectronics PD84010S-E
  • Buy PD84010S-E
  • PD84010S-E Price
  • PD84010S-E Distributor
  • PD84010S-E Supplier
  • PD84010S-E Wholesale
Related Products
3SK294(TE85L,F)
3SK294(TE85L,F)

Toshiba Semiconductor and Storage

SAV-551+
SAV-551+

Mini-Circuits

TAV2-501+
TAV2-501+

Mini-Circuits

CE3514M4-C2
CE3514M4-C2

CEL

AFT05MS004NT1
AFT05MS004NT1

NXP USA Inc.

SAV-541+
SAV-541+

Mini-Circuits

CE3512K2-C1
CE3512K2-C1

CEL

AFM907NT1
AFM907NT1

NXP Semiconductors

SKY65050-372LF
SKY65050-372LF

Skyworks Solutions Inc.

CE3520K3-C1
CE3520K3-C1

CEL

AFT09MS007NT1
AFT09MS007NT1

NXP USA Inc.

AFT09MS015NT1
AFT09MS015NT1

NXP USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER