STMicroelectronics PD84010TR-E

Overview

PD84010TR-E from STMicroelectronics is a N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 40 V drain-source voltage, 8 A continuous drain current, and delivering 10 W output power with 14.3 dB gain at 870 MHz under 7.5 V supply - optimized for portable radio and broadband industrial RF amplifiers.

For engineers reviewing the PD84010TR-E datasheet, PD84010TR-E pinout, PD84010TR-E application, or PD84010TR-E equivalent, this device requires attention to thermal resistance (1.0 °C/W), ESD protection class (HBM 2 / MM M3), gate threshold voltage (3.4–4.6 V), load mismatch tolerance (20:1 VSWR), and PowerSO-10RF package assembly constraints.

Technical Context

This LDMOS transistor operates in enhancement mode with fixed common-source topology, supporting DC–1 GHz frequency range. Its static characteristics include low on-resistance (0.64–0.7 V at 3 A) and tight gate leakage (<1 μA), while dynamic performance centers on high-efficiency P3dB operation (10–12 W) and linearity-critical harmonic suppression.

The device integrates ESD protection per HBM Class 2 and MM Class M3, and uses ST's PowerSO-10RF plastic SMD package - JEDEC-approved, with formed gull-wing leads, optimized for RF impedance matching (ZIN = 0.35 + j1.1 Ω at 870 MHz) and thermal dissipation up to 95 W at TC = 70 °C.

Key Specifications

Pinout & Package

PD84010TR-E is housed in the PowerSO-10RF (formed lead) plastic package - a JEDEC-approved, surface-mount RF power package with gull-wing leads, 9.4–9.6 mm width, 13.85–14.35 mm length, and 3.4–3.6 mm height. It features integrated thermal pad for direct PCB copper pour attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2150HR5 and PD57018-E, PD84010TR-E offers lower-voltage (7.5 V) operation, reduced system complexity, and superior cost-performance balance for sub-12 W portable and industrial RF amplifiers - without requiring GaN-level thermal management or 28 V infrastructure.

Availability

PD84010TR-E is available at Aetrix Electronics and suitable for land mobile radio, industrial RF heating, public safety base stations, and ISM band amplifiers requiring stable component supply, tape-and-reel packaging for automated assembly, and long-term production continuity.

Supply support for PD84010TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF devices for industrial, automotive, and consumer markets.

PD84010TR-E belongs to ST's LdmoST plastic RF power transistor family - engineered specifically for high-gain, broadband commercial and industrial RF amplification up to 1 GHz using cost-effective plastic SMD packaging.

FAQ

What is the recommended gate bias voltage for linear operation at 870 MHz?

The datasheet specifies VGS(Q) = 3.4–4.6 V to set IDQ = 250 mA at VDS = 10 V. For stable linear amplification at 870 MHz, a gate bias of 4.0 V ±0.2 V is recommended to center the quiescent point within the specified range and maintain consistent gain and efficiency across temperature.

Can PD84010TR-E operate safely with a 20:1 VSWR load mismatch?

Yes - the device is explicitly characterized for 20:1 VSWR across all phase angles at 870 MHz with 9.5 V supply and 300 mA quiescent current. This reflects built-in ruggedness from ST's LDMOS process and PowerSO-10RF package thermal design, eliminating need for external circulators or isolators in portable radio front-ends.

Is the PowerSO-10RF package compatible with standard reflow soldering profiles?

Yes - PD84010TR-E has Moisture Sensitivity Level (MSL) 3 per J-STD-020B, allowing use of industry-standard Pb-free reflow profiles (peak 260 °C) without pre-baking, provided humidity exposure time complies with MSL 3 floor life limits (168 hours at ≤30 °C/60% RH).

How does the 1.0 °C/W RthJC value translate to practical heatsinking requirements?

At 95 W power dissipation and 70 °C case temperature, a 1.0 °C/W RthJC implies 95 °C junction-to-case delta, resulting in TJ = 165 °C - the absolute maximum. To maintain TJ ≤ 150 °C, total system thermal resistance (RthJA) must be ≤ 1.26 °C/W, requiring a heatsink with RthSA ≤ 0.26 °C/W when ambient is 50 °C and PCB copper area is optimized.