STMicroelectronics PD85006L-E

Overview

PD85006L-E from STMicroelectronics is a common-source N-channel enhancement-mode LDMOS RF power transistor in PowerFLAT™ 5×5 mm leadless SMD package, delivering 6 W output power with 15 dB gain at 870 MHz under 13.6 V supply and 200 mA quiescent drain current. It features ESD protection (HBM Class 2, MM Class M3), 6 °C/W junction-to-case thermal resistance, and broadband operation up to 1 GHz for mobile radio amplification.

For engineers reviewing the PD85006L-E datasheet, PD85006L-E pinout, PD85006L-E application, or PD85006L-E equivalent, key selection criteria include RF output power capability at 870 MHz, thermal performance in compact SMD layout, linearity under load mismatch (20:1 VSWR tolerance), and compatibility with 13.6 V DC bias networks in commercial land-mobile transmitters.

Technical Context

The PD85006L-E operates in common-source configuration with gate-controlled lateral DMOS channel architecture, optimized for high-gain broadband amplification from 860–960 MHz. Its static characteristics include 4 V gate threshold voltage and 0.27 V on-resistance at 0.25 A, while dynamic RF performance is characterized by 55–63% drain efficiency and <−30 dB harmonic suppression at fundamental frequency.

Thermal design leverages the PowerFLAT™ package's low R_thJC of 6 °C/W and integrated thermal pad for direct PCB copper heat spreading. Impedance data (e.g., Z_GS = 2.66 + j4.28 Ω at 860 MHz) enables precise matching network synthesis using discrete capacitors and transmission lines as validated on the reference demo board.

Key Specifications

Pinout & Package

PD85006L-E uses the PowerFLAT™ 5×5 mm leadless plastic package with exposed thermal pad (EP) on underside for PCB heat sinking. The package complies with JEDEC JESD97 ECOPACK® standards and MSL 3 moisture sensitivity level.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD57006-E and MRF300AN, PD85006L-E offers optimal balance of 6 W output, 13.6 V compatibility, and SMD thermal integration for mobile radio designs where board area and assembly simplicity are prioritized over raw power scaling.

Availability

PD85006L-E is available at Aetrix Electronics and suitable for land-mobile radio transmitters, UHF public safety repeaters, and commercial two-way radio handsets requiring stable component supply, consistent RF performance across production lots, and long-term lifecycle support.

Supply support for PD85006L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and communications markets.

PD85006L-E belongs to ST's LdmoST™ RF power transistor product line, engineered specifically for high-linearity, high-efficiency UHF amplification in compact SMD form factors used in mobile and portable wireless infrastructure.

FAQ

What is the recommended gate bias voltage for linear operation?

The PD85006L-E achieves optimal linearity and 200 mA quiescent drain current at a gate-source voltage of 4 V, as specified in the static characteristics table. This value is measured at V_DS = 13.6 V and is stable across temperature; fixed-bias networks using precision 4.0 V references or resistive dividers from 13.6 V supply are validated in the reference schematic.

Can PD85006L-E operate at frequencies outside the 860–960 MHz range?

Yes - the device maintains usable gain and efficiency from 820 MHz to 1000 MHz, as shown in Figure 7 (Gain vs Frequency) and Figure 6 (P_OUT vs Frequency). At 1 GHz, P_OUT drops to ~4.5 W and gain to ~13 dB, but harmonic suppression remains within specification, making it viable for adjacent-band applications with minor matching adjustments.

Is the exposed thermal pad electrically connected to the source terminal?

Yes - the exposed pad (EP) is internally bonded to the source terminal and must be soldered to a solid PCB ground plane. This dual-purpose connection provides both thermal conduction (accounting for the 6 °C/W R_thJC) and RF grounding, and failure to connect it results in thermal runaway and degraded RF performance per Figure 17 footprint guidelines.

What is the maximum safe operating drain voltage?

The absolute maximum drain-source voltage is 40 V, but the device is characterized and qualified for continuous operation at 13.6 V DC supply. Exceeding 13.6 V without adjusting bias conditions risks exceeding the 2 A absolute maximum drain current rating and violating the 20.8 W power dissipation limit, especially under mismatched load conditions.