STMicroelectronics PD85015S-E

Overview

PD85015S-E from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF straight-lead plastic package. It delivers 15 W output power with 16 dB gain at 870 MHz under 13.6 V supply, features ESD protection (HBM Class 2, MM Class M3), and operates up to 1 GHz for broadband industrial and commercial RF amplification - notably in car radio final stages.

For engineers reviewing the PD85015S-E datasheet, PD85015S-E pinout, PD85015S-E application, or PD85015S-E equivalent, key selection criteria include its 1.6 °C/W junction-to-case thermal resistance, 40 V drain-source breakdown voltage, 5 A continuous drain current rating, linearity performance at P3dB, and compatibility with SMD assembly in high-reliability RF power designs.

Technical Context

The PD85015S-E employs ST's LDMOS technology optimized for RF power amplification in common-source configuration. Its static characteristics include VGS(Q) = 3.0–4.3 V at ID = 150 mA and low RDS(ON) of 0.34 V at VGS = 10 V/ID = 1 A, enabling efficient biasing and switching control.

Dynamically, it achieves 15–20 W P3dB output at 870 MHz with 16 dB power gain and 60–70% drain efficiency. Input/output impedance data (e.g., ZIN = 0.651 + j1.512 Ω at 800 MHz) supports broadband matching network design without external harmonic suppression.

Key Specifications

Pinout & Package

PD85015S-E uses the PowerSO-10RF straight-lead plastic package - JEDEC-approved, surface-mountable, and optimized for RF thermal and electrical performance. Dimensions include overall width L = 0.8–1.1 mm, lead pitch E = 15.15–15.65 mm, and case height A2 = 3.4–3.6 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD85015-E and PD85015TR-E, the PD85015S-E offers identical RF performance and thermal behavior but differs only in lead form (straight vs. gull-wing) and packaging (tube vs. tape-and-reel), making it suitable for manual prototyping or selective soldering processes where formed leads are incompatible.

Availability

PD85015S-E is available at Aetrix Electronics and suitable for car radio final amplifiers, land-mobile radio transmitters, and broadband industrial RF amplifiers requiring stable component supply, JEDEC-compliant SMD packaging, and proven thermal reliability in uncooled environments.

Supply support for PD85015S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The PD85015S-E belongs to ST's LdmoST plastic RF power transistor family - engineered specifically for high-gain, high-linearity, broadband amplification in cost-sensitive commercial and industrial RF systems operating up to 1 GHz.

FAQ

What is the maximum operating frequency of the PD85015S-E?

The PD85015S-E is characterized for operation up to 1 GHz, with full RF performance data (gain, P3dB, efficiency) specified at 870 MHz. Its impedance and capacitance parameters remain stable across 500–1000 MHz, supporting broadband matching networks without performance degradation.

Does PD85015S-E require external gate protection?

No - the device integrates on-chip ESD protection rated Class 2 HBM and Class M3 MM, eliminating the need for external gate-series resistors or TVS diodes in typical RF amplifier layouts. Gate drive circuits should still maintain clean DC bias and avoid floating conditions during power-up.

How does the PowerSO-10RF package improve thermal performance?

The PowerSO-10RF package provides direct thermal conduction from the drain die attach to the exposed copper slug on the package underside, achieving RthJC = 1.6 °C/W. This allows 59 W power dissipation at TC = 70 °C with minimal heatsink mass - critical for space-constrained automotive and portable RF modules.

Can PD85015S-E be used in Class AB amplifier configurations?

Yes - its 150 mA quiescent drain current (IDQ) at VGS = 3.0–4.3 V and low VDS(ON) of 0.34 V enable stable Class AB biasing. The device maintains linearity and efficiency across output power levels from 1 W to 15 W, supporting both high-efficiency and low-distortion operating points.