STMicroelectronics PD85015STR-E

Overview

PD85015STR-E from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF (straight lead) package. It delivers 15 W RF output power with 16 dB gain at 870 MHz and 13.6 V supply, features ESD protection, and targets high-linearity broadband amplification in automotive car radios and industrial transmitters.

For engineers reviewing the PD85015STR-E datasheet, PD85015STR-E pinout, PD85015STR-E application, or PD85015STR-E equivalent, key selection criteria include its 1.6 °C/W junction-to-case thermal resistance, 40 V drain-source breakdown voltage, 5 A continuous drain current rating, and verified 870 MHz small-signal gain performance under 13.6 V bias.

Technical Context

This LDMOS device operates in common-source configuration with gate-controlled enhancement-mode conduction. Its static parameters include VGS(Q) = 3.0–4.3 V at ID = 150 mA and VDS(ON) = 0.34 V at VGS = 10 V/ID = 1 A, supporting stable Class AB biasing.

Dynamically, it achieves P3dB = 15–20 W and GP = 16 dB at 870 MHz with 13.6 V supply and 150 mA quiescent drain current. Its impedance profile (e.g., ZIN = 0.651 + j1.512 Ω at 800 MHz) enables broadband matching up to 1 GHz.

Key Specifications

Pinout & Package

PD85015STR-E uses the PowerSO-10RF straight-lead plastic package - JEDEC-approved, surface-mountable, and optimized for RF thermal and electrical performance. The package features integrated heatsink pad and gull-wing–compatible lead geometry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF454B and PD57015-E, PD85015STR-E uniquely balances 15 W broadband output, 16 dB gain at 870 MHz, and SMD-compatible thermal performance in a JEDEC-qualified plastic package - making it optimal for cost-sensitive, space-constrained automotive and portable RF designs.

Availability

PD85015STR-E is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial UHF telemetry transmitters, and commercial FM broadcast boosters requiring stable component supply and long-term production continuity.

Supply support for PD85015STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

PD85015STR-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for high-efficiency, high-linearity amplification in commercial and automotive broadcast applications up to 1 GHz.

FAQ

What is the maximum safe operating drain voltage for PD85015STR-E?

The absolute maximum drain-source voltage is 40 V, but recommended DC operating voltage is 13.6 V per datasheet test conditions. Exceeding 13.6 V requires rigorous thermal validation due to reduced safe operating area above this point, especially at high ambient temperatures or with poor heatsinking.

Can PD85015STR-E be used in Class C amplifier configurations?

No - PD85015STR-E is characterized and qualified only for Class AB operation. Its VGS(Q) threshold and transconductance curve are optimized for linear biasing at 150 mA IDQ; Class C operation risks thermal runaway and violates the device's specified safe operating area limits.

Is the PowerSO-10RF package RoHS-compliant and halogen-free?

Yes - PD85015STR-E carries ECOPACK®2 certification, confirming full compliance with RoHS Directive 2011/65/EU and halogen-free resin formulation (Br < 900 ppm, Cl < 900 ppm). Full material declarations are available in ST's ECOPACK® database.

Does PD85015STR-E require external gate resistors for stability?

Yes - the datasheet specifies inclusion of a 10 Ω non-inductive gate resistor in series with the RF drive path to dampen potential VHF/UHF oscillations. Omission may cause instability above 300 MHz, particularly under mismatched load conditions.