STMicroelectronics PD85015TR-E

Overview

PD85015TR-E from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF plastic package. It delivers 15 W output power with 16 dB gain at 870 MHz under 13.6 V supply, features ESD protection, and targets high-reliability RF final-stage amplification in commercial and industrial transmitters.

For engineers reviewing the PD85015TR-E datasheet, PD85015TR-E pinout, PD85015TR-E application, or PD85015TR-E equivalent, key selection criteria include its 1.6 °C/W junction-to-case thermal resistance, 40 V drain-source breakdown voltage, 5 A continuous drain current rating, and verified 870 MHz small-signal gain performance in automotive radio and broadband base station front-end designs.

Technical Context

This LDMOS device operates in common-source configuration with gate threshold voltage of 3.0–4.3 V and low on-resistance (0.34 V at V_GS = 10 V, I_D = 1 A). Its dynamic performance is characterized at 13.6 V DC bias and 150 mA quiescent drain current, supporting P_3dB output up to 20 W across 500–1000 MHz.

Thermal design is enabled by the JEDEC-approved PowerSO-10RF package, which provides 1.6 °C/W R_thJC and supports stable operation up to 165 °C junction temperature. Input/output impedance data (e.g., Z_IN = 0.651 + j1.512 Ω at 800 MHz) are provided for matching network synthesis.

Key Specifications

Pinout & Package

PD85015TR-E uses the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for thermal dissipation and RF performance with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF158G and PD57015-E, PD85015TR-E offers optimal balance of thermal performance (1.6 °C/W), proven reliability in automotive environments, and cost-effective SMD manufacturability - making it preferred for volume UHF transmitter modules where 15 W output and 16 dB gain are sufficient.

Availability

PD85015TR-E is available at Aetrix Electronics and suitable for automotive radio transmitters, UHF wireless microphones, ISM-band remote controls, and broadband base station drivers requiring stable component supply and JEDEC-compliant SMD packaging.

Supply support for PD85015TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, mixed-signal, power, and RF devices for industrial, automotive, and consumer markets.

PD85015TR-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband amplification in commercial and industrial transmitters operating up to 1 GHz.

FAQ

What is the maximum recommended DC supply voltage for PD85015TR-E?

The absolute maximum drain-source voltage (V(BR)DSS) is 40 V, but the device is characterized and optimized for 13.6 V operation in common-source configuration. Operating above 13.6 V increases thermal stress and reduces reliability margin without proportional RF output improvement; ST specifies 13.6 V as the nominal DC supply for all published gain and power data.

Does PD85015TR-E require external ESD protection in PCB layout?

No - PD85015TR-E integrates on-chip ESD protection rated to HBM Class 2 (2 kV), validated per JEDEC JS-001. External TVS diodes or series resistors are unnecessary for handling or reflow unless the end application faces extreme electrostatic environments beyond standard manufacturing conditions.

Can PD85015TR-E be used in Class C amplifier configurations?

While possible, ST characterizes and guarantees performance only in Class AB operation at 150 mA quiescent drain current. Class C use would require custom biasing, invalidate gain/linearity specs, and risk exceeding junction temperature limits due to reduced conduction angle and increased harmonic content - not supported in the official datasheet.

What is the minimum recommended heatsink thermal resistance for continuous 15 W operation?

With R_thJC = 1.6 °C/W and max T_J = 165 °C, assuming 70 °C case temperature (T_C), the allowable ΔT is 95 °C. For 59 W max dissipation, required R_thCS + R_thSA ≤ 1.6 °C/W. For 15 W RF output (≈25 W DC input), R_thCS + R_thSA ≤ 3.8 °C/W is sufficient - a 2.2 °C/W heatsink meets this with margin.