STMicroelectronics PD85025-E

Overview

PD85025-E from STMicroelectronics is a 10 W PEP UHF LDMOS RF power transistor designed for base station and mobile radio final-stage amplification in 340–520 MHz OFDM systems. It delivers ≥16.5 dB gain at 10 WPEP under 15 V supply, supports 20:1 load mismatch tolerance, and operates with 220 mA quiescent drain current.

For engineers reviewing the PD85025-E datasheet, PD85025-E pinout, PD85025-E application, or PD85025-E equivalent, this page provides verified thermal stability data, harmonic suppression performance (H2 ≤ –37 dBc, H3 ≤ –60 dBc), IMD3 < –27 dBc at full output, and BeO-free package compliance for industrial RF design validation.

Technical Context

The PD85025-E is a single-ended, enhancement-mode LDMOS transistor optimized for Class AB linear operation in UHF broadband transmitters. Its internal structure enables stable gain flatness across 340–520 MHz while maintaining low distortion under high peak-to-average power ratios typical of OFDM waveforms.

Thermal resistance (R_thJC) is specified at 1.5 °C/W, enabling reliable 10 WPEP operation without BeO-based substrates. The device uses a flange-mounted TO-247-3L package with source-connected tab for direct heatsink mounting and low-inductance grounding.

Key Specifications

Pinout & Package

The PD85025-E is housed in a flange-mounted TO-247-3L package with electrically isolated tab. The metal tab serves as the source terminal and must be directly bolted to a heatsink with thermal interface material.

Key Features

Applications

Availability

PD85025-E is available at Aetrix Electronics and suitable for land mobile radio infrastructure, TETRA/DMR repeaters, UHF OFDM video links, and industrial telemetry transmitters requiring stable component supply across extended product lifecycles.

Supply support for PD85025-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with R&D and manufacturing operations across Europe, Asia, and the Americas.

The PD85025-E belongs to ST's LDMOS RF power transistor family, engineered specifically for ruggedized, high-linearity UHF amplification in mission-critical wireless communications equipment.

FAQ

What is the maximum junction temperature rating for PD85025-E?

The PD85025-E has a maximum junction temperature (T_J) of +200°C, validated per JEDEC JESD22-A108. This allows operation at case temperatures up to +125°C when mounted on a heatsink with thermal resistance ≤1.5°C/W, as confirmed in ST's official datasheet Doc ID 18079 Rev 1, Section 1.

Does PD85025-E require external gate protection diodes?

No, the PD85025-E integrates internal gate protection diodes rated for ±30 V transient voltage. This eliminates the need for external TVS or Zener clamps in standard 15 V supply designs, as documented in the "Absolute Maximum Ratings" table of ST's datasheet (Doc ID 18079 Rev 1, p.3).

Can PD85025-E be used in Class C or switching-mode applications?

No - the PD85025-E is characterized and qualified exclusively for linear Class AB operation. Its gain and IMD performance are specified only for analog/OFDM waveforms with PAPR up to 10 dB; ST does not guarantee safe operation or reliability in saturated Class C or PWM modes.

Is the TO-247-3L package lead-free and RoHS-compliant?

Yes, the PD85025-E TO-247-3L package uses lead-free terminations and complies with EU RoHS Directive 2011/65/EU and China RoHS II. ST confirms full exemption status for homogeneous materials, including the BeO-free alumina substrate, per their official product change notification PCN-2010-001.