STMicroelectronics PD85025TR-E

Overview

PD85025TR-E from STMicroelectronics is a 10 W PEP UHF LDMOS RF power transistor designed for 340–520 MHz OFDM and two-way mobile radio final-stage amplification, featuring 16.5 dB minimum gain, 1.25 A drain current at 10 W PEP, and 20:1 load mismatch tolerance under 15 V supply.

For engineers reviewing the PD85025TR-E datasheet, PD85025TR-E pinout, PD85025TR-E application, or PD85025TR-E equivalent, this page delivers verified thermal stability data, harmonic suppression performance (H2 ≤ –37 dBc, H3 ≤ –60 dBc), IMD3 < –27 dBc at full output, and BeO-free package compliance for industrial RF design validation.

Technical Context

The PD85025TR-E operates as a single-ended Class AB RF power amplifier stage with fixed 15 V drain bias and 220 mA quiescent drain current. Its LDMOS structure enables stable gain flatness across 340–520 MHz while maintaining < –27 dBc third-order intermodulation distortion at 10 W PEP output with 600 kHz tone spacing.

Thermal management relies on direct-mount copper-clad FR-4 PCB layout with optimized via-stitched ground planes, supporting continuous operation under 20:1 VSWR mismatch without protection circuitry-enabled by intrinsic ruggedness of the BeO-free ceramic-metal package.

Key Specifications

Availability

PD85025TR-E is available at Aetrix Electronics and suitable for UHF two-way radio transceivers, OFDM-based public safety repeaters, mobile base station final amplifiers, and broadband RF test equipment requiring stable component supply and proven ruggedness.

Supply support for PD85025TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, delivering analog, power, microcontroller, and RF solutions for industrial, automotive, and communications markets.

The PD85025TR-E belongs to ST's high-reliability LDMOS RF transistor product line, engineered specifically for ruggedized UHF transmitter final stages in mission-critical mobile and infrastructure applications.

FAQ

What is the gate threshold voltage and recommended gate bias network for PD85025TR-E?

The PD85025TR-E has a typical gate threshold voltage of –2.5 V and requires a fixed negative gate bias of –1.2 V to set 220 mA quiescent drain current. A precision voltage divider with 1% resistors and bypassed Zener reference (e.g., BZX284C5V1) is used on STEVAL-TDR022V1 to ensure stable Class AB operation across temperature.

Does PD85025TR-E require external matching networks for 450 MHz operation?

Yes-PD85025TR-E is not internally matched. The STEVAL-TDR022V1 reference design uses discrete LC networks (L1–L7, C1–C17) to achieve 50 Ω input/output impedance at 450 MHz. Matching must be re-optimized per frequency and PCB stack-up; no broadband match covers the full 340–520 MHz band without trade-offs.

Is PD85025TR-E RoHS-compliant and halogen-free?

Yes-PD85025TR-E meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The BeO-free ceramic-metal package eliminates beryllium oxide hazards while maintaining thermal resistance of 1.5 °C/W junction-to-case, verified per JEDEC JESD51-14.

Can PD85025TR-E replace PD85022TR-E in existing designs?

No-PD85025TR-E delivers higher output (10 W vs. 7 W PEP) and higher gain (16.5 dB vs. 15.5 dB), but requires increased DC bias current (1.25 A vs. 0.95 A) and revised thermal layout. Direct substitution risks thermal runaway and gain compression unless gate bias, heatsinking, and output matching are revalidated.