STMicroelectronics PD85035-E

Overview

PD85035-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 35 W POUT at 870 MHz with 14.9 dB gain and 60–72% drain efficiency at 13.6 V supply. It features 40 V V(BR)DSS, 8 A ID max, 1.0 °C/W RthJC, and ESD protection per HBM Class 2. Designed for car mobile radio amplifiers requiring broadband linearity and thermal stability up to 1 GHz.

For engineers reviewing the PD85035-E datasheet, PD85035-E pinout, PD85035-E application, or PD85035-E equivalent, this page delivers verified electrical specs, PowerSO-10RF package details, thermal performance data, and real-world use cases in mobile RF power stages - all grounded in ST's official Doc ID 13597 Rev 3.

Technical Context

The PD85035-E operates as a single-ended, common-source RF amplifier with fixed gate bias (VGS(Q) = 3.4–4.6 V), optimized for 870 MHz commercial band operation. Its LDMOS structure delivers high transconductance and low output capacitance (COSS = 45 pF), enabling stable broadband matching across 10–1000 MHz.

Thermal design centers on the PowerSO-10RF package's 1.0 °C/W junction-to-case resistance and 165 °C max junction temperature, supporting continuous-wave operation at 35 W with appropriate heatsinking. ESD robustness (HBM Class 2) and moisture sensitivity level MSL 3 ensure manufacturability in standard SMT lines.

Key Specifications

Pinout & Package

PD85035-E uses the PowerSO-10RF plastic package - ST's first JEDEC-approved high-power SMD RF package - with formed leads (gull wing). The package provides low-inductance source grounding and optimized RF port geometry for minimal parasitic coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6P20140HR5 and PD57003-E, PD85035-E uniquely balances 35 W output, 13.6 V compatibility, and PowerSO-10RF manufacturability - making it optimal for cost-sensitive, thermally constrained mobile radio final stages.

Availability

PD85035-E is available at Aetrix Electronics and suitable for car mobile radio amplifiers, FM broadcast transmitters, and industrial UHF repeaters requiring stable component supply, JEDEC-compliant SMD packaging, and proven RF linearity at 870 MHz.

Supply support for PD85035-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

PD85035-E belongs to ST's LdmoST plastic family of RF power transistors - engineered specifically for high-efficiency, broadband mobile and industrial radio amplifiers operating below 1 GHz.

FAQ

What is the recommended gate bias voltage for PD85035-E in Class AB operation?

The datasheet specifies VGS(Q) = 3.4–4.6 V at ID = 250 mA and VDS = 10 V. For stable Class AB operation at IDQ = 350 mA, a gate bias of 4.2 V ±0.2 V is recommended, verified by Figure 7 and Table 4. This setting achieves optimal gain-efficiency trade-off at 870 MHz with 13.6 V supply.

Can PD85035-E be used at frequencies above 1 GHz?

No - the device is characterized and guaranteed only up to 1 GHz. Gain drops sharply beyond 950 MHz (Figure 9 shows <10 dB at 1 GHz), and load mismatch tolerance degrades. ST explicitly rates it for "up to 1 GHz" in the description, and no performance data is provided above that frequency.

Is the PowerSO-10RF package lead-free and RoHS compliant?

Yes - PD85035-E is offered in ECOPACK®-compliant versions. ST's documentation confirms compliance with Directive 2002/95/EC (RoHS), and the PowerSO-10RF package uses lead-free terminations. MSL 3 rating (per J-STD-020B) further confirms suitability for Pb-free reflow processes.

Does PD85035-E require external ESD protection in the circuit?

No - the device integrates on-chip ESD protection rated to HBM Class 2 (2 kV), as confirmed in Table 6. No external TVS diodes or series resistors are required for handling or board-level ESD immunity, though good RF layout practices (grounding, decoupling) remain essential for signal integrity.