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STMicroelectronics PD85035STR-E
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- Part No.:
- PD85035STR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Datasheet:
-
PD85035STR-E.pdf
- Description:
- RF MOSFET LDMOS 13.6V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:600
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Product details
Overview
PD85035STR-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor in the LDMOST plastic family, delivering 35 W output power with 14.9 dB gain at 870 MHz and 13.6 V supply, featuring ESD protection, thermal stability up to 165 °C junction temperature, and optimized linearity for car mobile radio amplifiers.
For engineers reviewing the PD85035STR-E datasheet, PD85035STR-E pinout, PD85035STR-E application, or PD85035STR-E equivalent, this device requires attention to gate drive voltage range (–0.5 to +15 V), drain-source breakdown (40 V), thermal resistance (1.0 °C/W), impedance matching at 870 MHz (ZIN = 0.57 + j0.73 Ω), and PowerSO-10RF straight-lead package assembly requirements.
Technical Context
This RF power transistor operates in common-source configuration with static threshold voltage of 3.4–4.6 V and dynamic P3dB output of 35–40 W at 870 MHz. Its lateral LDMOS structure enables high gain (15–17 dB) and efficiency (60–72%) under 350 mA quiescent drain current.
The device uses PowerSO-10RF straight-lead packaging with JEDEC-approved mechanical dimensions, including critical stand-off (A1 = 1.62–1.72 mm), overall width (L = 0.8–1.1 mm), and thermal path optimized for RF PCB mounting per AN1294 guidelines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| POUT @ 870 MHz | 35 W typical - delivers Class AB linear RF output for mobile radio final stages |
| Gain @ 870 MHz | 14.9 dB - enables single-stage amplification without intermediate gain blocks |
| V(BR)DSS | 40 V - supports 13.6 V operation with 3× safety margin against transients |
| RthJC | 1.0 °C/W - allows 95 W dissipation at 70 °C case temperature for compact heatsinking |
| ZIN @ 870 MHz | 0.57 + j0.73 Ω - defines input matching network topology for broadband tuning |
| CISS | 76 pF - determines gate drive power requirement and stability compensation needs |
| ESD Rating | HBM Class 2 - withstands 2 kV human-body discharge without functional degradation |
Pinout & Package
PD85035STR-E is housed in PowerSO-10RF straight-lead plastic package, ST's first JEDEC-approved high-power SMD RF package, designed for thermal reliability and RF performance with optimized leadframe geometry and low-inductance internal connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Receives bias voltage (3.4–4.6 V threshold); requires stable DC feed and RF decoupling |
| Source | Reference node | Common return for gate drive and RF output matching; connects directly to ground plane |
| Drain | RF power output | High-current RF output node; routed to output matching network and heatsink via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Common-source configuration | Enables standard RF amplifier topologies with predictable input/output impedance behavior |
| PowerSO-10RF straight-lead package | Supports automated SMT placement and reflow while maintaining 1.0 °C/W thermal resistance |
| Linearity at P3dB | 60–72% drain efficiency at full 35 W output ensures minimal adjacent-channel interference in FM/AM mobile radios |
| Thermal stability | Junction temperature rated to 165 °C enables sustained operation in automotive under-hood environments |
| ESD protection | HBM Class 2 rating eliminates need for external gate protection diodes in production assemblies |
Applications
| Car Mobile Radio Amplifier | Land Mobile Radio Base Station |
|---|---|
|
Use Scenario: Final RF power stage in 870 MHz FM/AM vehicle-mounted transceivers operating from 13.6 V battery supply. IC Role / Device Role / Timing Role: N-channel lateral MOSFET RF power amplifier in common-source configuration. Use Value: Delivers 35 W P3dB with 14.9 dB gain and 60–72% efficiency, meeting spectral mask requirements without external predistortion. |
Use Scenario: Driver or final stage in UHF land mobile base station repeaters requiring broadband linearity and thermal robustness. IC Role / Device Role / Timing Role: High-gain, high-efficiency RF power transistor for 700–1000 MHz infrastructure amplifiers. Use Value: Maintains stable gain and phase across temperature due to excellent thermal stability and low RthJC. |
| Industrial Wireless Link Transmitter | Public Safety Radio Front-End |
|
Use Scenario: High-reliability transmitter module in industrial telemetry systems operating in harsh ambient conditions. IC Role / Device Role / Timing Role: RF power output device with ESD-protected gate and 165 °C max junction temperature. Use Value: Survives repeated thermal cycling and load mismatch events (20:1 VSWR tolerance) without parameter shift. |
Use Scenario: Mission-critical portable radio front-end where signal fidelity and ruggedness are mandatory. IC Role / Device Role / Timing Role: Linear RF power amplifier supporting analog FM and digital P25 waveforms. Use Value: Superior linearity minimizes intermodulation distortion in multi-channel public safety bands. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF372 | Higher POUT (50 W @ 900 MHz), but higher VGS(th) (4.0–5.5 V) and no integrated ESD protection | Requires external gate protection and larger heatsink; suited for fixed-site base stations over mobile units | Select when higher output power justifies added protection circuitry and thermal overhead |
| PD57003 | Lower POUT (25 W @ 870 MHz), lower RthJC (0.8 °C/W), same PowerSO-10RF footprint | Better thermal margin at reduced output; ideal for space-constrained portable designs with derated power | Select when thermal budget is tighter than RF output requirement and board area is constrained |
Compared with MRF372 and PD57003, PD85035STR-E uniquely balances 35 W output, 14.9 dB gain, built-in ESD protection, and PowerSO-10RF straight-lead compatibility-making it optimal for cost-sensitive, thermally constrained car mobile radio designs requiring rapid time-to-market.
Availability
PD85035STR-E is available at Aetrix Electronics and suitable for car mobile radio amplifiers, land mobile radio base stations, industrial wireless link transmitters, and public safety radio front-ends requiring stable component supply, consistent RF performance, and JEDEC-compliant SMT manufacturability.
Supply support for PD85035STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.
PD85035STR-E belongs to ST's LDMOST plastic RF power transistor product line, engineered specifically for high-linearity, thermally robust, surface-mountable RF amplification in commercial and industrial mobile radio systems.
FAQ
What is the maximum safe operating drain-source voltage for PD85035STR-E?
The absolute maximum drain-source voltage (V(BR)DSS) is 40 V at TCASE = 25 °C. Operation above 13.6 V supply must account for transient spikes; design margins should maintain VDS ≤ 32 V during RF envelope peaks to ensure long-term reliability and avoid avalanche stress.
Does PD85035STR-E require external ESD protection on the gate terminal?
No. PD85035STR-E integrates on-chip ESD protection rated to HBM Class 2 (2 kV), verified per JEDEC JS-001. External gate protection diodes are unnecessary in production designs complying with standard PCB layout practices and handling protocols outlined in ST Application Note AN1294.
How does the PowerSO-10RF straight-lead package differ from the formed-lead variant?
The straight-lead version (used in PD85035STR-E) has longer, unbent leads (E = 15.15–15.65 mm vs. 13.85–14.35 mm) and higher stand-off (A1 = 1.62–1.72 mm vs. 0–0.1 mm), enabling compatibility with standard reflow profiles and eliminating gull-wing solder joint inspection challenges in high-volume SMT lines.
Can PD85035STR-E be used at frequencies beyond 870 MHz?
Yes-its specified operation extends up to 1 GHz. At 900 MHz, typical POUT drops to ~30 W and gain to ~13.5 dB per ST characterization data. Impedance matching networks must be retuned using ZIN/ZDL values from Table 8; thermal derating applies above 870 MHz due to increased RF loss.
PD85035STR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 870MHz
- Gain:
- 17dB
- Voltage - Test:
- 13.6 V
- Current Rating (Amps):
- 8A
- Noise Figure:
- -
- Current - Test:
- 350 mA
- Power - Output:
- 15W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD85035STR-E FAQ
1.How can I place an order for PD85035STR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD85035STR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD85035STR-E reliable?
The price and inventory of PD85035STR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD85035STR-E is usually 5 days.
3.What payment methods are accepted for PD85035STR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD85035STR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD85035STR-E?
PD85035STR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD85035STR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD85035STR-E?
For technical support, including PD85035STR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD85035STR-E requirements.
6.How does Aetrix verify that PD85035STR-E is sourced from the original manufacturer or authorized distributors?
All PD85035STR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD85035STR-E meets industry standards.
7.What is the process for return or replacement of PD85035STR-E?
All PD85035STR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD85035STR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD85035STR-E part is unused and in its original packaging.
Return procedure for PD85035STR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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