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STMicroelectronics PD85035TR-E
- Part No.:
- PD85035TR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
-
PD85035TR-E.pdf
- Description:
- RF MOSFET LDMOS 13.6V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:8,030
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Product details
Overview
PD85035TR-E from STMicroelectronics is a N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, delivering 35 W output power with 14.9 dB gain at 870 MHz and 13.6 V supply, featuring ESD protection and optimized for car mobile radio amplification.
For engineers reviewing the PD85035TR-E datasheet, PD85035TR-E pinout, PD85035TR-E application, or PD85035TR-E equivalent, this device requires attention to thermal resistance (1.0 °C/W), drain-source voltage rating (40 V), gate-source voltage range (–0.5 to +15 V), P3dB performance (35–40 W), and PowerSO-10RF package mounting constraints.
Technical Context
This LDMOS transistor operates in common-source mode up to 1 GHz with fixed 13.6 V bias, supporting broadband commercial and industrial RF amplification. Its static characteristics include VGS(Q) = 3.4–4.6 V at ID = 250 mA and low on-resistance (VDS(ON) = 0.64–0.7 V at ID = 3 A).
Dynamic performance is defined at 870 MHz: P3dB = 35–40 W, power gain = 15–17 dB, drain efficiency = 60–72%, and load mismatch tolerance up to 20:1 VSWR. Impedance data shows ZIN = 0.57 + j0.73 Ω and ZDL = 1.73 – j0.15 Ω at 870 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P3dB Output Power | 35–40 W at 870 MHz, 13.6 V, IDQ = 350 mA - defines usable saturated RF output before compression |
| Power Gain | 15–17 dB under POUT = 15 W condition - determines small-signal amplification capability in linear region |
| Junction-to-Case Thermal Resistance | 1.0 °C/W - enables high-power operation with minimal temperature rise when mounted on heatsink |
| Drain-Source Voltage Rating | 40 V - sets maximum safe DC supply swing and RF peak voltage margin |
| Gate-Source Voltage Range | –0.5 to +15 V - constrains bias network design and ESD protection requirements |
| Input Capacitance (CISS) | 76 pF at VDS = 12.5 V - impacts input matching network component sizing and bandwidth |
| ESD Protection Class | HBM Class 2, MM Class M3 - specifies minimum handling precautions during assembly |
Pinout & Package
PD85035TR-E uses the PowerSO-10RF (formed lead) plastic SMD package - ST's first JEDEC-approved high-power RF SMD package, optimized for thermal dissipation and RF performance with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Receives bias voltage (VGS) to modulate channel conduction; requires stable, low-noise DC supply and RF decoupling |
| Source | Reference node | Common return path for gate and drain currents; must be low-inductance RF ground for stability |
| Drain | RF output terminal | Delivers amplified RF power; connects to output matching network and heat-spreading copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | 165 °C max junction temperature with 1.0 °C/W RthJC - supports continuous high-power operation without thermal runaway |
| Linearity performance | 60–72% drain efficiency at P3dB - reduces distortion in FM/AM car radio transmission paths |
| ESD robustness | HBM Class 2 (≥2 kV), MM Class M3 - eliminates need for external transient suppressors in PCB layout |
| Package reliability | PowerSO-10RF formed-lead JEDEC-compliant SMD - enables automated reflow assembly while maintaining RF integrity |
| Impedance match readiness | ZIN = 0.57 + j0.73 Ω at 870 MHz - simplifies input matching network design with fewer components |
Applications
| Car Mobile Radio Transmitter | UHF Land Mobile Radio Base Station |
|---|---|
Use Scenario: Amplifying FM/AM broadcast signals in vehicle-mounted two-way radios operating near 870 MHz. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in common-source configuration driving antenna interface. Use Value: Delivers 35 W P3dB with 14.9 dB gain and 20:1 VSWR tolerance, ensuring reliable transmission under antenna detuning conditions. |
Use Scenario: Medium-power RF amplification in fixed-site UHF land mobile infrastructure equipment. IC Role / Device Role / Timing Role: High-efficiency broadband driver stage for repeater or base station transmitter chains. Use Value: Achieves 60–72% drain efficiency at full output, reducing thermal load and power supply demand in enclosed cabinets. |
| Commercial Broadcast Auxiliary Link | Industrial Wireless Telemetry Transmitter |
Use Scenario: Point-to-point audio/video relay links used by broadcasters for remote studio feeds. IC Role / Device Role / Timing Role: Linear RF PA stage requiring low intermodulation distortion across 800–900 MHz band. Use Value: Superior linearity from ST's LDMOS process ensures clean spectral emission meeting FCC Part 74 mask requirements. |
Use Scenario: Remote sensor network transmitters in oil/gas or utility monitoring systems operating at 870 MHz. IC Role / Device Role / Timing Role: Robust final amplifier in battery-backed or solar-powered telemetry nodes. Use Value: 165 °C junction rating and –65 to +150 °C storage range support deployment in uncontrolled outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6P21190HR5 | Higher P3dB (190 W), GaN-on-SiC, 28 V operation, RthJC = 0.45 °C/W | Requires redesigned bias network, heatsink, and matching circuits; suited for higher-power base stations | Select when >100 W output and >2 GHz bandwidth needed; not drop-in compatible |
| PD57018-E | LDMOS, 18 W P3dB, same PowerSO-10RF package, 13.6 V, RthJC = 1.2 °C/W | Lower power, identical footprint and pinout - direct replacement where 35 W is excessive | Choose for cost-sensitive or thermally constrained designs needing <20 W output |
Compared with MRF6P21190HR5 and PD57018-E, PD85035TR-E provides optimal balance of 35 W output, 1.0 °C/W thermal resistance, and drop-in compatibility with existing PowerSO-10RF layouts - making it ideal for mid-power mobile radio upgrades without board redesign.
Availability
PD85035TR-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile base stations, and commercial broadcast auxiliary links requiring stable component supply and tape-and-reel delivery for SMT production.
Supply support for PD85035TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.
PD85035TR-E belongs to ST's LdmoST plastic RF power transistor family - engineered specifically for high-gain, broadband amplification in mobile and infrastructure radio systems up to 1 GHz.
FAQ
What is the recommended gate bias voltage for linear operation?
The datasheet specifies VGS(Q) = 3.4–4.6 V at ID = 250 mA for quiescent biasing. For linear Class AB operation at IDQ = 350 mA, typical gate voltage is 4.2 V with 13.6 V drain supply. This setting balances gain, efficiency, and IMD3 performance per Figure 9 and Table 4.
Can PD85035TR-E operate at frequencies above 870 MHz?
Yes - the device is rated for operation up to 1 GHz in common-source mode. Performance degrades gradually beyond 870 MHz: gain drops to ~12 dB and P3dB falls to ~25 W at 950 MHz per Figure 10. Matching networks must be retuned for optimal results above 870 MHz.
Is the PowerSO-10RF package lead-free and RoHS compliant?
Yes - PD85035TR-E carries ECOPACK® compliance per ST's environmental program. It meets RoHS Directive 2011/65/EU and is halogen-free. The "E" suffix in the part number explicitly denotes RoHS-compliant packaging per ST's ordering nomenclature.
How does the 20:1 VSWR tolerance impact system design?
This rating means the transistor survives indefinite operation into extreme load mismatches (e.g., open or short circuit) at 50 W output without damage. It eliminates need for external circulators or VSWR protection circuits in mobile radio front-ends, simplifying antenna interface design and improving field reliability.
PD85035TR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 870MHz
- Gain:
- 17dB
- Voltage - Test:
- 13.6 V
- Current Rating (Amps):
- 8A
- Noise Figure:
- -
- Current - Test:
- 350 mA
- Power - Output:
- 15W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Formed Lead)
PD85035TR-E FAQ
1.How can I place an order for PD85035TR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD85035TR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD85035TR-E reliable?
The price and inventory of PD85035TR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD85035TR-E is usually 5 days.
3.What payment methods are accepted for PD85035TR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD85035TR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD85035TR-E?
PD85035TR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD85035TR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD85035TR-E?
For technical support, including PD85035TR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD85035TR-E requirements.
6.How does Aetrix verify that PD85035TR-E is sourced from the original manufacturer or authorized distributors?
All PD85035TR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD85035TR-E meets industry standards.
7.What is the process for return or replacement of PD85035TR-E?
All PD85035TR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD85035TR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD85035TR-E part is unused and in its original packaging.
Return procedure for PD85035TR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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