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NXP Semiconductors PDTA113EM,315
- Part No.:
- PDTA113EM,315
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- -
- Datasheet:
-
PDTA113EM,315.pdf
- Description:
- TRANS PREBIAS PNP 250MW SOT883
- Quantity:
- Payment:
- Shipping:
Inventory:120,000
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Product details
Overview
PDTA113EM,315 from Nexperia is a PNP resistor-equipped transistor (RET) with integrated bias resistors R1 = 1 kΩ and R2 = 1 kΩ, designed for compact DC switching and level-shifting in space-constrained PCBs. It delivers −100 mA output current, −50 V collector-emitter voltage rating, and operates reliably up to 150 °C junction temperature in ultra-small SOT883 (SC-101) package measuring 1.0 × 0.6 × 0.5 mm.
For engineers reviewing the PDTA113EM,315 datasheet, PDTA113EM,315 pinout, PDTA113EM,315 application, or PDTA113EM,315 equivalent, key selection criteria include built-in resistor ratio tolerance (0.8–1.2), low VCEsat (−150 mV at IC = −30 mA/IB = −1.5 mA), off-state input voltage (−1.3 to −0.5 V), thermal resistance (500 K/W), and compatibility with reflow-only soldering per SOT883 mounting guidelines.
Technical Context
This device integrates two precision silicon resistors (R1 = 1 kΩ, R2/R1 = 1 ± 0.2) directly into a PNP bipolar transistor die, eliminating external base bias components. Its internal resistor network enables direct logic-level drive from 3.3 V or 5 V microcontrollers without external pull-up/down networks.
The SOT883 package uses leadless 3-solder-land construction with 0.5 mm pitch, requiring controlled reflow profiles per JEDEC J-STD-020. Electrical behavior is characterized at Tamb = 25 °C with derating above 25 °C based on Rth(j-a) = 500 K/W and Ptot = 250 mW maximum.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage under open-base conditions; defines high-side switch headroom in 24 V industrial systems. |
| IO (DC) | −100 mA: Continuous output current capability; supports driving LEDs, small relays, or logic buffers without heatsinking. |
| R1 | 1 kΩ (0.7–1.3 kΩ): Input bias resistor value; sets base current for predictable turn-on with standard CMOS/TTL logic levels. |
| R2/R1 | 1.0 ± 0.2: Ratio tolerance ensures stable current gain (hFE ≥ 30) across process variation; critical for consistent saturation behavior. |
| VCEsat | −150 mV @ IC = −30 mA / IB = −1.5 mA: Low saturation voltage minimizes power loss and self-heating in high-duty-cycle switching. |
| Ptot | 250 mW @ Tamb ≤ 25 °C: Total power dissipation limit; requires thermal derating above ambient - e.g., ~125 mW at 75 °C. |
| Cc | 2 pF @ VCB = −10 V / f = 1 MHz: Collector capacitance impacts high-frequency response; suitable for <10 MHz digital switching. |
Pinout & Package
SOT883 (SC-101) is a leadless ultra-small plastic package with 3 solder lands, body dimensions 1.0 × 0.6 × 0.5 mm, optimized for high-density automated assembly and reflow-only processing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connected internally to R1 and R2 network; accepts logic-level control signal; no external base resistor required. |
| 2 | GND (emitter) | Emitter terminal tied to system ground reference; serves as common return path for load current and bias network. |
| 3 | output (collector) | Switched high-side output node; connects to load anode (for PNP high-side switch) or pull-down path in inverter configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors R1 and R2 | Eliminates two external 1 kΩ resistors, reducing BOM count and PCB area by >1.5 mm² in typical logic interface layouts. |
| Low VCEsat (−150 mV) | Reduces conduction loss to <4.5 mW at 30 mA, enabling thermally efficient operation in sealed enclosures or stacked modules. |
| Wide operating temperature range | Junction temperature support up to +150 °C allows deployment in under-hood automotive modules or industrial motor controllers. |
| Reflow-compatible SOT883 package | Leadless 0.5 mm pitch footprint supports IPC Class 3 assembly standards and eliminates through-hole drilling or wave soldering steps. |
| Controlled VI(off) and VI(on) | Off-state input voltage (−1.3 to −0.5 V) and on-state input voltage (−2 to −1.7 V) ensure noise-immune switching with 3.3 V GPIO. |
Applications
| LED Driver Circuit | Microcontroller I/O Expander |
|---|---|
Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU GPIO pins in portable medical devices. IC Role / Device Role / Timing Role: High-side PNP switch controlling LED anode connection to 3.3 V rail; provides inverted logic control with minimal external parts. Use Value: Built-in R1/R2 enables direct GPIO drive without level-shifting or discrete resistor networks, saving 2.1 mm² PCB area per channel. |
Use Scenario: Adding active-low enable outputs to an ARM Cortex-M0+ design with limited GPIO availability. IC Role / Device Role / Timing Role: Logic-level translator and current amplifier; converts weak MCU output into robust −100 mA sink/source for peripheral reset lines. Use Value: −150 mV VCEsat ensures <3.3 mW power loss during sustained enable assertion, supporting battery life >5 years in always-on IoT nodes. |
| Industrial Sensor Interface | Power Supply Sequencing |
Use Scenario: Level-shifting and buffering analog sensor outputs (e.g., 0–5 V pressure transducer) before ADC sampling in PLC backplanes. IC Role / Device Role / Timing Role: Inverting buffer stage isolating noisy 24 V field wiring from sensitive 3.3 V measurement circuitry. Use Value: −50 V VCEO rating withstands induced transients on industrial I/O lines; R2/R1 tolerance maintains consistent gain across temperature. |
Use Scenario: Controlling power-up sequence of dual-rail FPGA core/I/O supplies using a single timing controller. IC Role / Device Role / Timing Role: Precision-delayed enable switch that activates secondary 1.2 V rail only after primary 3.3 V rail stabilizes. Use Value: Tight VI(off)/VI(on) window (−1.3 V to −1.7 V) enables accurate threshold detection with RC timing networks, achieving ±5 % sequencing accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC113EM | NPN complement with identical R1/R2 values, SOT883 package, and matching pinout (1=base, 2=emitter, 3=collector). | Requires inverted logic drive and low-side switching topology instead of high-side; not interchangeable without circuit redesign. | Select when load must be switched to ground rather than supply rail, or when interfacing with open-collector drivers. |
| NSV113EMXV6T1G | ON Semiconductor PNP RET in SOT883; R1 = 10 kΩ, R2 = 10 kΩ - 10× higher bias resistance limits drive strength to ~10 mA max. | Lower output current capability restricts use to signal-level switching only; unsuitable for >20 mA loads like relays or multi-LED strings. | Choose only for ultra-low-power wake-up circuits where <1 µA standby current outweighs output performance requirements. |
Compared with PDTC113EM, PDTA113EM,315 offers native high-side switching with −100 mA capability and tighter R2/R1 tolerance (±20 % vs ±30 %), while NSV113EMXV6T1G trades current drive for lower quiescent consumption - making PDTA113EM,315 optimal for general-purpose industrial interface loads.
Availability
PDTA113EM,315 is available at Aetrix Electronics and suitable for industrial sensor interfaces, microcontroller I/O expansion, LED driver circuits, and power supply sequencing requiring stable component supply and long-term production continuity.
Supply support for PDTA113EM,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, and consumer markets.
The PDTA113E series belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to reduce component count and simplify PCB layout in cost-sensitive, high-volume digital interface applications.
FAQ
What is the recommended soldering method for PDTA113EM,315?
Reflow soldering is the only recommended method per Nexperia's datasheet. The SOT883 package is not suitable for wave or hand soldering due to its leadless construction and thermal sensitivity. Profile must comply with JEDEC J-STD-020, peak temperature ≤ 260 °C, and time above 217 °C limited to 60–150 seconds.
Can PDTA113EM,315 replace a discrete PNP transistor plus two resistors?
Yes - it replaces a PNP transistor (e.g., BC807) and two 1 kΩ resistors in standard bias configurations. Pinout matches common SOT883 layouts, and R1/R2 values are trimmed to 1 kΩ ±30 % with ratio tolerance ±20 %, ensuring predictable hFE and VCEsat without manual resistor selection or placement.
What is the meaning of marking code 'G4' on PDTA113EM,315?
'G4' is the top-side laser marking code identifying the PDTA113EM variant per Nexperia's ordering table. It appears on the package surface alongside date code and factory identifier, and corresponds uniquely to the SOT883 (SC-101) version with R1 = R2 = 1 kΩ - distinct from '16' (SOT416) or '17' (SOT346) variants.
Does PDTA113EM,315 support operation at 125 °C ambient temperature?
Yes - with appropriate derating. At Tamb = 125 °C, maximum allowable power dissipation drops to ~125 mW (based on Rth(j-a) = 500 K/W and Tj(max) = 150 °C). This supports −60 mA continuous output at VCEsat, sufficient for most logic interface and low-power switching tasks in harsh environments.
PDTA113EM,315 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Resistor - Base (R1):
- -
- Resistor - Emitter Base (R2):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- Frequency - Transition:
- -
- Power - Max:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
PDTA113EM,315 FAQ
1.How can I place an order for PDTA113EM,315 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA113EM,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA113EM,315 reliable?
The price and inventory of PDTA113EM,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA113EM,315 is usually 5 days.
3.What payment methods are accepted for PDTA113EM,315?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA113EM,315 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTA113EM,315?
PDTA113EM,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTA113EM,315 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTA113EM,315?
For technical support, including PDTA113EM,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA113EM,315 requirements.
6.How does Aetrix verify that PDTA113EM,315 is sourced from the original manufacturer or authorized distributors?
All PDTA113EM,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA113EM,315 meets industry standards.
7.What is the process for return or replacement of PDTA113EM,315?
All PDTA113EM,315 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA113EM,315, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA113EM,315 part is unused and in its original packaging.
Return procedure for PDTA113EM,315:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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