NXP Semiconductors PDTA113EMB,315

Overview

PDTA113EMB from Nexperia is a PNP resistor-equipped transistor (RET) in a leadless DFN1006B-3 (SOT883B) package, designed for digital switching in space-constrained applications. It integrates 1 kΩ input bias resistor (R1) and 1 kΩ emitter feedback resistor (R2), delivers −100 mA output current, features −50 V V_CEO, and is AEC-Q101 qualified for automotive use.

For engineers reviewing the PDTA113EMB datasheet, PDTA113EMB pinout, PDTA113EMB application, or PDTA113EMB equivalent, this device serves as a drop-in replacement for discrete base-resistor transistor configurations in low-power logic interfacing, peripheral control, and mobile I/O buffering where board area and assembly cost are critical.

Technical Context

This PNP RET integrates matched on-chip resistors (R1 = 1 kΩ, R2/R1 = 1.0 ±0.2) to eliminate external bias components and ensure stable saturation under varying temperature and process conditions. Its −150 mV V_CEsat at −30 mA/−1.5 mA enables efficient low-voltage switching in 1.8 V–5 V digital systems.

The device operates with −1.7 V typical V_I(on) and −0.9 V typical V_I(off), supporting TTL- and CMOS-compatible input thresholds. Its 2 pF collector capacitance and 180 MHz f_T support fast edge transitions in signal routing and enable/disable functions up to ~10 MHz.

Key Specifications

Pinout & Package

DFN1006B-3 (SOT883B) is a 3-terminal, leadless surface-mount package with exposed emitter pad for thermal and electrical grounding. Dimensions: 1.0 mm × 0.6 mm × 0.37 mm height; solder land pitch: 0.4 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Compared with PDTC113EMB and NSV113E1T1G, PDTA113EMB uniquely balances −100 mA drive, −50 V rating, and 1 kΩ/1 kΩ bias ratio in the smallest footprint-making it optimal for space-limited, medium-current automotive and portable digital I/O.

Availability

PDTA113EMB is available at Aetrix Electronics and suitable for automotive interior lighting, portable device power sequencing, and industrial sensor interface applications requiring stable component supply and long-term manufacturability.

Supply support for PDTA113EMB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and consumer markets.

This part belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered to reduce component count and improve assembly yield in digital interface and peripheral driver circuits.

FAQ

What is the maximum continuous junction temperature for PDTA113EMB?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in Table 5 of the datasheet. Operation above this limit risks permanent degradation of the silicon die and integrated resistors. Derating begins at 25 °C ambient, with total power dissipation reduced linearly to zero at 150 °C per the curve in Figure 2.

Can PDTA113EMB replace a standard PNP transistor like BC807 in existing designs?

Yes, but only if the base drive is compatible with its integrated 1 kΩ R1 resistor. Unlike BC807, PDTA113EMB requires no external base resistor - applying 3.3 V directly to Pin 1 yields ~2.3 mA base current. Verify that the target load current and V_CEsat requirements match the RET's −150 mV specification at operating conditions.

Is the DFN1006B-3 package compatible with standard reflow profiles?

Yes - the device is qualified for lead-free reflow soldering only, per Section 10 of the datasheet. Use IPC/JEDEC J-STD-020D-compliant profiles with peak temperatures ≤260 °C. Avoid wave or hand soldering, as the ultra-thin package and thermal pad require controlled heating to prevent delamination or voiding.

How does the R2/R1 ratio affect switching behavior?

The R2/R1 ratio of 0.8–1.2 ensures stable biasing across temperature and process variation, preventing unintended conduction during transient noise events. A ratio near unity maintains consistent V_I(off) (−1.3 to −0.5 V), enabling robust noise immunity in automotive CAN/LIN subsystems where EMI is prevalent.