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NXP Semiconductors PDTA113ZK,115
- Part No.:
- PDTA113ZK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTA113ZK,115.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SMT3
- Quantity:
- Payment:
- Shipping:
Inventory:6,349
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Product details
Overview
PDTA113ZK,115 from NXP Semiconductors is a PNP resistor-equipped transistor in SOT346 (SC-59) package, featuring built-in bias resistors R1 = 1 kΩ and R2/R1 = 10, VCEO = −50 V, IO = −100 mA, and Ptot = 250 mW at Tamb ≤ 25 °C. It serves as a compact, pre-biased switching element in digital logic interfaces and level-shifting circuits.
For engineers reviewing the PDTA113ZK,115 datasheet, PDTA113ZK,115 pinout, PDTA113ZK,115 application, or PDTA113ZK,115 equivalent, this part delivers verified DC current gain (hFE ≥ 35 at IC = −5 mA), low VCEsat (≤ −150 mV), and off-state input voltage (VI(off) ≤ −0.3 V) - critical for reliable low-power switching in space-constrained PCB layouts.
Technical Context
The PDTA113ZK,115 integrates two precision on-die resistors (R1 = 1 kΩ ±30 %, R2/R1 = 8–12) to form a fixed-base bias network, eliminating external components required for standard PNP transistor switching. Its internal topology connects R1 between base and input, and R2 between base and emitter, enabling direct TTL/CMOS-compatible drive without pull-up or pull-down networks.
This configuration supports fast turn-on/turn-off transitions with typical collector capacitance Cc = 2 pF and guaranteed operation across −40 °C to +150 °C junction temperature. The device is rated for reflow soldering only and exhibits stable hFE over temperature, maintaining ≥35 at IC = −5 mA and VCE = −5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V - Maximum allowable collector-emitter voltage with base open; defines safe blocking capability in high-side switch applications. |
| IO (DC) | −100 mA - Continuous output current rating; sets maximum load drive capacity for relay drivers or LED sinks. |
| R1 | 1 kΩ (0.7–1.3 kΩ) - Input bias resistor value; determines base current magnitude and enables direct logic-level control without external resistors. |
| R2/R1 | 10 (8–12) - Fixed resistor ratio defining internal feedback; ensures predictable saturation behavior and stable switching thresholds. |
| VCEsat | ≤ −150 mV at IC = −10 mA, IB = −0.5 mA - Low saturation voltage minimizes power loss and heat generation in active-switching mode. |
| hFE | ≥ 35 at VCE = −5 V, IC = −5 mA - Minimum DC current gain; guarantees sufficient current amplification for reliable signal inversion or buffering. |
| Ptot | 250 mW at Tamb ≤ 25 °C - Total power dissipation limit in SOT346 package; constrains thermal design for continuous operation. |
Pinout & Package
SOT346 (SC-59) plastic surface-mounted package; 3 leads; body dimensions 3.1 × 1.7 × 1.3 mm; recommended for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | input (base) | Connection point for external control signal; internally tied to R1 and R2 node - accepts logic-high (≤ −0.3 V) to disable or logic-low (≤ −2.5 V) to enable conduction. |
| 2 | GND (emitter) | Emitter terminal connected to system ground or low-side reference; serves as current return path and bias reference for R2. |
| 3 | output (collector) | Switched output node; sinks up to −100 mA when enabled; used for driving loads such as LEDs, small relays, or logic inputs. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors | Eliminates need for two external resistors, reducing BOM count and PCB footprint by ~2.5 mm² per instance. |
| Pre-biased PNP topology | Enables direct interface with 3.3 V or 5 V CMOS/TTL outputs without level translation or additional drive circuitry. |
| Low VCEsat | ≤ −150 mV ensures <15 mW conduction loss at 100 mA, improving efficiency in battery-powered or thermally constrained systems. |
| Wide operating temperature | Junction range −65 °C to +150 °C supports automotive under-hood, industrial control, and outdoor equipment deployment. |
| Reflow-solder compatible | Qualified for lead-free reflow per J-STD-020; no wave soldering or hand-soldering recommended due to thermal sensitivity. |
Applications
| Logic Level Translation | LED Driver Circuit |
|---|---|
|
Use Scenario: Converting 3.3 V microcontroller GPIO output to drive a 5 V logic input requiring active-low assertion. IC Role / Device Role / Timing Role: PNP switch configured as inverter with grounded emitter and collector pulled up to 5 V rail. Use Value: Eliminates discrete resistor network while maintaining VI(on) ≤ −0.95 V and VI(off) ≥ −0.3 V for clean logic threshold margins. |
Use Scenario: Driving a common-anode RGB LED segment from a 3.3 V MCU with current limiting via external series resistor. IC Role / Device Role / Timing Role: High-side current sink where collector connects to LED cathode and emitter ties to GND. Use Value: Delivers consistent −100 mA sink capability with VCEsat ≤ −150 mV, minimizing voltage drop and thermal rise in LED string control. |
| Relay Driver Interface | Power Rail Enable Switch |
|
Use Scenario: Controlling a 12 V, 40 mA coil relay using a 3.3 V ARM Cortex-M0+ output pin. IC Role / Device Role / Timing Role: Digital switch placed between relay coil and 12 V supply, with emitter grounded and collector connected to coil. Use Value: Provides guaranteed hFE ≥ 35 and IO = −100 mA margin, ensuring full relay actuation even at elevated ambient temperatures. |
Use Scenario: Enabling/disabling a 3.3 V auxiliary power rail in a multi-rail embedded system based on system state signals. IC Role / Device Role / Timing Role: Low-side enable switch where collector connects to rail GND return path and emitter ties to main system ground. Use Value: Achieves <10 µA leakage (ICEO ≤ −1 µA) in off-state and <150 mV dropout in on-state, preserving rail accuracy and efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP pre-biased transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC113ZK | NPN complement with identical R1/R2 values, SOT346 package, and matching VCEO/IO ratings. | Requires inverted logic drive and high-side load placement; unsuitable for direct replacement in PNP-configured circuits. | Select PDTC113ZK only when redesigning for NPN-based topology or complementary push-pull stages. |
| NSV113ZK | Same R1/R2 values and SOT346 package but specified for automotive AEC-Q101 qualification and extended −40 °C to +150 °C operation. | Validated for under-hood automotive use; includes enhanced ESD robustness (HBM > 8 kV) and tighter R1 tolerance (±10 %). | Choose NSV113ZK for automotive-grade reliability; PDTA113ZK,115 remains optimal for cost-sensitive industrial or consumer designs. |
Compared with PDTC113ZK and NSV113ZK, the PDTA113ZK,115 offers the lowest unit cost and broadest commercial availability while retaining identical bias network performance and SOT346 mechanical compatibility - making it ideal for non-automotive volume production where AEC-Q101 is not mandated.
Availability
PDTA113ZK,115 is available at Aetrix Electronics and suitable for LED driver circuits, logic level translators, relay interfaces, and power rail enable switches requiring stable component supply and long-term manufacturability.
Supply support for PDTA113ZK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTA113ZK,115 belongs to NXP's resistor-equipped transistor (RET) product line, designed specifically to simplify digital interface design by integrating precision bias networks into compact surface-mount packages for high-volume consumer and industrial electronics.
FAQ
What is the maximum continuous collector current rating for PDTA113ZK,115?
The PDTA113ZK,115 has a maximum continuous DC output current (IO) of −100 mA, as specified in Table 2 and Table 6 of the NXP datasheet. This rating applies under standard mounting conditions at Tamb ≤ 25 °C and assumes proper PCB thermal relief. Exceeding this current may cause thermal runaway or permanent degradation of the PDTA113ZK,115.
Does PDTA113ZK,115 support lead-free reflow soldering?
Yes, PDTA113ZK,115 is qualified for lead-free reflow soldering per J-STD-020, with peak temperature tolerance up to 260 °C. The datasheet explicitly states "reflow soldering is the only recommended soldering method" and prohibits wave or hand soldering due to thermal stress risks. Proper profile adherence ensures long-term reliability of the PDTA113ZK,115.
What is the function of the built-in resistors R1 and R2 in PDTA113ZK,115?
In PDTA113ZK,115, R1 (1 kΩ) connects the input pin to the internal base node, and R2 (10 kΩ) connects the base to the emitter. This forms a fixed-current bias network that eliminates external resistors, enabling direct logic-level drive. The R2/R1 ratio of 10 ensures stable saturation and predictable VI(on)/VI(off) thresholds - a core functional feature of the PDTA113ZK,115.
Can PDTA113ZK,115 be used as a direct replacement for a standard PNP transistor like BC807?
No, PDTA113ZK,115 is not a drop-in replacement for discrete PNP transistors such as BC807 because it integrates internal bias resistors and uses a different pinout (input/base on pin 1, emitter/GND on pin 2, collector/output on pin 3). Substituting PDTA113ZK,115 requires circuit redesign to remove external base resistors and verify logic polarity compatibility - the PDTA113ZK,115 functions as a complete switching module, not a bare transistor.
What is the storage temperature range for PDTA113ZK,115?
The PDTA113ZK,115 has a specified storage temperature range of −65 °C to +150 °C, as defined in Table 6 (Limiting Values) of the NXP datasheet. This range applies to unpowered devices stored in dry, non-condensing environments and ensures parametric stability during long-term inventory holding - a key specification for supply chain resilience of the PDTA113ZK,115.
PDTA113ZK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 1 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 35 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PDTA113ZK,115 FAQ
1.How can I place an order for PDTA113ZK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA113ZK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA113ZK,115 reliable?
The price and inventory of PDTA113ZK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA113ZK,115 is usually 5 days.
3.What payment methods are accepted for PDTA113ZK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA113ZK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTA113ZK,115?
PDTA113ZK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTA113ZK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTA113ZK,115?
For technical support, including PDTA113ZK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA113ZK,115 requirements.
6.How does Aetrix verify that PDTA113ZK,115 is sourced from the original manufacturer or authorized distributors?
All PDTA113ZK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA113ZK,115 meets industry standards.
7.What is the process for return or replacement of PDTA113ZK,115?
All PDTA113ZK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA113ZK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA113ZK,115 part is unused and in its original packaging.
Return procedure for PDTA113ZK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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