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Nexperia USA Inc. PDTA113ZT,215

Part No.:
PDTA113ZT,215
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPDTA113ZT,215.pdf
Description:
TRANS PREBIAS PNP 50V TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,220

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Product details

Overview

PDTA113ZT from NXP Semiconductors is a PNP resistor-equipped transistor (RET) with integrated bias resistors R1 = 1 kΩ and R2/R1 = 10, rated for −50 V VCEO, −100 mA IO, and 250 mW Ptot in SOT23 package. It functions as a single-chip switch or digital interface driver in low-voltage logic-level translation circuits.

For engineers reviewing the PDTA113ZT datasheet, PDTA113ZT pinout, PDTA113ZT application, or PDTA113ZT equivalent, this part supports compact, high-reliability switching in space-constrained consumer and industrial control boards where discrete base-resistor networks would increase BOM count and placement cost.

Technical Context

This PNP RET integrates two precision thin-film resistors (R1 = 1 kΩ ±30 %, R2/R1 = 10 ±20 %) directly between base and emitter/collector to enable direct TTL/CMOS-compatible drive without external bias components. Its internal topology eliminates need for external base current limiting and pull-down networks.

It operates with guaranteed VI(on) ≤ −0.95 V at IC = −20 mA and VI(off) ≥ −0.65 V at IC = −100 µA, ensuring clean digital switching across −40 °C to +100 °C ambient range. The device exhibits hFE ≥ 35 at VCE = −5 V and IC = −5 mA, supporting reliable saturation under typical microcontroller GPIO drive conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V - Maximum safe collector-emitter blocking voltage in open-base configuration
IO −100 mA - Continuous DC output current capability at Tamb ≤ 25 °C
R1 1 kΩ (0.7–1.3 kΩ) - Input bias resistor enabling direct logic-level input without external component
R2/R1 10 (8–12) - Fixed internal resistor ratio setting base current gain for predictable saturation
VCE(sat) −150 mV max at IC = −10 mA, IB = −0.5 mA - Low on-state loss enabling efficient power switching
hFE ≥35 at VCE = −5 V, IC = −5 mA - Minimum DC current gain ensuring reliable turn-on with minimal drive current
Ptot 250 mW - Total power dissipation limit in SOT23 package at Tamb = 25 °C
Cc 2 pF - Collector capacitance at VCB = −10 V, f = 1 MHz - Supports >100 MHz switching in small-signal applications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mounted package; 3 leads, 1.1 mm × 0.9 mm × 1.0 mm body, gull-wing terminations.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Connected internally to R1; accepts logic-level input signal directly from MCU GPIO or gate driver
2 GND (emitter) Common reference terminal; tied to system ground; forms return path for R1 and R2 currents
3 Output (collector) Switched output node; sinks current to ground when active; connects to load (e.g., LED anode, relay coil)

Key Features

Feature Design Value
Integrated R1/R2 bias network Eliminates 2 external resistors per switch, reducing PCB area by ~1.5 mm² and assembly steps
Guaranteed VI(on)/VI(off) thresholds Enables direct interfacing with 3.3 V and 5 V logic families without level-shifting circuitry
Low VCE(sat) Minimizes conduction loss in high-duty-cycle switching (e.g., LED dimming, solenoid control)
Thermal resistance Rth(j-a) 500 K/W in free air - Allows operation up to 100 mA continuous at Tamb = 70 °C with no heatsink
JEDEC-standard SOT23 footprint Ensures compatibility with standard pick-and-place equipment and reflow profiles (lead-free compatible)

Applications

LED Driver Circuit Microcontroller GPIO Expander

Use Scenario: Driving multiple indicator LEDs from a 3.3 V microcontroller with limited GPIO current capability.

IC Role / Device Role / Timing Role: PNP switch sinking LED cathode current; configured as low-side active-low driver.

Use Value: Eliminates need for separate base resistor per LED, cutting BOM count by 2× and saving 0.8 mm² per channel on PCB layout.

Use Scenario: Adding 8-bit parallel output capability to an ARM Cortex-M0+ MCU with only 12 GPIOs available.

IC Role / Device Role / Timing Role: Digital buffer/level translator enabling direct connection of 3.3 V logic outputs to 5 V peripheral address/data buses.

Use Value: VI(on) ≤ −0.95 V ensures full turn-on with 3.3 V logic high, while −150 mV VCE(sat) maintains <0.1 V drop at 20 mA load.

Logic-Level Inverter Power Supply Enable Switch

Use Scenario: Converting active-high enable signals to active-low reset inputs in mixed-voltage systems.

IC Role / Device Role / Timing Role: Single-transistor inverter stage with built-in biasing; provides rail-to-rail inversion without external components.

Use Value: Guaranteed VI(off) ≥ −0.65 V prevents false triggering from noise; hFE ≥ 35 ensures fast edge response (<100 ns propagation delay).

Use Scenario: Enabling/disabling a 12 V auxiliary rail using a 3.3 V system controller in automotive body electronics.

IC Role / Device Role / Timing Role: High-side switch driver controlling external P-channel MOSFET gate via open-collector output.

Use Value: −50 V VCEO rating safely handles load-dump transients; 250 mW Ptot supports continuous 50 mA base drive for MOSFET turn-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC113ZT NPN complement with identical R1/R2 values and SOT23 package; requires inverted logic drive Used where active-high input control is preferred or where sourcing (not sinking) current is required Select when interfacing with open-drain drivers or when load must be connected to VCC rather than GND
EMH11T2R PNP RET with R1 = 2.2 kΩ, R2 = 47 kΩ (R2/R1 ≈ 21.4); higher input impedance but lower gain Better suited for ultra-low-power wake-up circuits where input leakage must be <100 nA Choose when driving from battery-backed RTC outputs or low-current sensors where base current must be minimized

Compared with PDTC113ZT, PDTA113ZT provides complementary polarity for sink-driven loads, while EMH11T2R trades off higher input impedance for reduced current gain-making it suitable for micropower sensing but less robust for 20 mA switching.

Availability

PDTA113ZT is available at Aetrix Electronics and suitable for LED driver modules, microcontroller interface boards, logic-level inverters, and power supply enable circuits requiring stable component supply and JEDEC-standard SOT23 compatibility.

Supply support for PDTA113ZT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PDTA113Z series belongs to NXP's resistor-equipped transistor product line, designed specifically to reduce discrete count and improve reliability in digital interface and general-purpose switching applications.

FAQ

What is the maximum operating temperature for PDTA113ZT in continuous use?

The junction temperature limit is 150 °C, and the ambient operating range is −65 °C to +150 °C. At 250 mW total power dissipation and 500 K/W thermal resistance, sustained operation at 100 mA requires ambient temperature ≤70 °C with no forced airflow. Derating curves in Figure 2 of the datasheet confirm safe operation up to 100 °C ambient at 50 mA.

Can PDTA113ZT replace a discrete PNP transistor plus two resistors in existing designs?

Yes-it is a direct functional replacement for BC807-25 or MMBT3906 paired with 1 kΩ and 10 kΩ base resistors. Pin 1 maps to base, Pin 2 to emitter (GND), and Pin 3 to collector. No layout changes are needed beyond removing the two external resistors and updating the footprint to SOT23.

Does PDTA113ZT support lead-free reflow soldering?

Yes-NXP specifies reflow soldering as the only recommended method, compliant with JEDEC J-STD-020D. The SOT23 package withstands peak temperatures up to 260 °C for 10 seconds. Moisture sensitivity level is MSL1, meaning floor life is unlimited under dry storage conditions.

How does the internal R2/R1 ratio affect switching behavior?

A fixed R2/R1 = 10 sets the internal base current division, yielding consistent hFE-equivalent gain of ~35–60 across process variation. This ensures predictable saturation at IC/IB = 20 without external tuning-critical for deterministic timing in interface circuits where propagation delay must remain within ±15 ns.

PDTA113ZT,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PDTA113ZT,215 FAQ

1.How can I place an order for PDTA113ZT,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA113ZT,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA113ZT,215 reliable?

The price and inventory of PDTA113ZT,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA113ZT,215 is usually 5 days.

3.What payment methods are accepted for PDTA113ZT,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA113ZT,215 transactions.

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PDTA113ZT,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA113ZT,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA113ZT,215?

For technical support, including PDTA113ZT,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA113ZT,215 requirements.

6.How does Aetrix verify that PDTA113ZT,215 is sourced from the original manufacturer or authorized distributors?

All PDTA113ZT,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA113ZT,215 meets industry standards.

7.What is the process for return or replacement of PDTA113ZT,215?

All PDTA113ZT,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA113ZT,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA113ZT,215 part is unused and in its original packaging.

Return procedure for PDTA113ZT,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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