NXP Semiconductors PDTA114EEAF
- Part No.:
- PDTA114EEAF
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- SC-75, SOT-416
- Datasheet:
-
PDTA114EEAF.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SC75
- Quantity:
- Payment:

- Shipping:

Inventory:7,951
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PDTA114EEAF from NXP Semiconductors is a PNP resistor-equipped transistor (RET) in SOT416 (SC-75) package, designed for digital switching applications with built-in bias resistors R1 = 10 kΩ and R2 = 10 kΩ, −50 V VCEO, −100 mA IO, and AEC-Q101 qualification for automotive use.
For engineers reviewing the PDTA114EEAF datasheet, PDTA114EEAF pinout, PDTA114EEAF application, or PDTA114EEAF equivalent, key selection criteria include its integrated base resistors, PNP polarity, −50 V collector-emitter breakdown voltage, −100 mA output current capability, and suitability for IC input control and load switching in space-constrained automotive and industrial PCBs.
Technical Context
This device integrates a PNP bipolar transistor with two monolithic silicon resistors (R1 and R2) on a single die, eliminating external bias components. Its internal resistor ratio R2/R1 is tightly controlled at 0.8–1.2, enabling predictable saturation behavior under defined drive conditions.
The PDTA114EEAF operates as a single-stage digital switch with fixed gain characteristics: hFE ≥ 30 at VCE = −5 V and IC = −5 mA, VCE(sat) ≤ −150 mV at IC = −10 mA/IB = −0.5 mA, and VI(on)/VI(off) thresholds of −2.5 V to −1.8 V and −1.1 V to −0.8 V respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum allowable collector-emitter voltage before breakdown; defines safe operating range for automotive 12 V/24 V rail switching. |
| IO | −100 mA: Continuous DC output current rating; supports medium-current digital loads like LED drivers or logic-level translators. |
| R1 | 10 kΩ ±30%: Input bias resistor value; sets base current for predictable turn-on without external component placement. |
| R2/R1 | 1.0 ±0.2: Ratio tolerance ensures stable saturation and consistent switching threshold across temperature and process variation. |
| VCE(sat) | ≤ −150 mV at IC = −10 mA/IB = −0.5 mA: Low saturation voltage minimizes power loss and heat generation during conduction. |
| AEC-Q101 | Qualified: Meets automotive-grade stress test requirements for discrete semiconductors, supporting under-hood and infotainment system deployment. |
| Package | SOT416 (SC-75): Ultra-small 3-pin surface-mount package (1.8 × 1.4 × 0.9 mm) enabling high-density PCB layouts. |
Pinout & Package
SOT416 (SC-75) plastic surface-mounted package with 3 leads; body dimensions 1.8 mm × 1.4 mm × 0.9 mm; standard footprint for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Input (base) | Connected internally to R1 and R2; accepts TTL/CMOS-compatible logic-level drive signals. |
| 2 | GND (emitter) | Emitter terminal tied to system ground reference; serves as common return path for switched current. |
| 3 | Output (collector) | Switched output node; sinks current from load to emitter when active, enabling high-side or low-side switching configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated R1 + R2 bias network | Eliminates two external resistors, reducing BOM count and PCB area while improving assembly yield. |
| −100 mA output current capability | Supports direct driving of moderate-power digital loads such as small relays, LEDs, or logic inputs without external amplification. |
| AEC-Q101 qualification | Validated for automotive environments including extended temperature cycling, humidity, and mechanical shock per industry standard. |
| Low VCE(sat) (≤ −150 mV) | Reduces conduction losses and thermal stress in battery-powered or thermally constrained systems. |
| Cost-saving alternative to BC847/857 series | Enables drop-in replacement in digital switching circuits while lowering total system cost through reduced component count and placement steps. |
Applications
| Automotive Body Control Module | Industrial Sensor Interface |
|---|---|
Use Scenario: Switching 12 V solenoid valves and indicator LEDs in door lock actuators and lighting control units. IC Role / Device Role / Timing Role: PNP digital switch providing level-shifted, current-sinking control of loads referenced to battery rail. Use Value: Integrated bias resistors eliminate layout sensitivity to trace parasitics and reduce risk of oscillation in noisy vehicle electrical environments. | Use Scenario: Interfacing microcontroller GPIO pins to 24 V industrial sensors and PLC input modules. IC Role / Device Role / Timing Role: Logic-level translator and current buffer isolating MCU from higher-voltage field-side circuitry. Use Value: −50 V VCEO rating provides margin against inductive kickback and supply transients common in factory automation wiring. |
| Consumer Appliance Power Sequencing | Medical Diagnostic Equipment Signal Conditioning |
Use Scenario: Enabling/disabling auxiliary power rails and status indicators in smart home hubs and HVAC controllers. IC Role / Device Role / Timing Role: Digital enable switch controlling power delivery to downstream subsystems based on firmware state. Use Value: SOT416 footprint allows dense integration near microcontrollers, minimizing routing length and EMI susceptibility. | Use Scenario: Isolating analog front-end signal paths from digital control logic in portable ultrasound and patient monitoring devices. IC Role / Device Role / Timing Role: Low-noise, low-leakage switch decoupling sensitive analog sections during standby or calibration modes. Use Value: ICEO ≤ −1 µA at 25 °C and ≤ −5 µA at 150 °C ensures minimal leakage-induced offset drift in precision measurement circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC114EE | NPN complement with identical R1/R2 values and SOT416 package; requires inverted logic drive and different load referencing. | Suitable where load must be connected to VCC rather than GND; not interchangeable without schematic revision. | Select PDTC114EE only when NPN topology aligns with system-level current direction and control logic polarity. |
| BC857B,115 | Discrete PNP BJT without integrated resistors; requires two external bias resistors and occupies more board area. | Offers higher hFE (200–450) but increases design complexity and component count for basic switching. | Choose BC857B,115 only if adjustable bias or higher gain is required; otherwise PDTA114EEAF reduces cost and improves reliability. |
Compared with PDTC114EE and BC857B,115, the PDTA114EEAF delivers optimized trade-offs for automotive and industrial digital switching: it eliminates external resistors like the BC857B but maintains PNP polarity unlike the PDTC114EE, enabling direct replacement in existing PNP-based schematics while reducing bill-of-materials and assembly steps.
Availability
PDTA114EEAF is available at Aetrix Electronics and suitable for automotive body control, industrial sensor interface, consumer appliance power sequencing, and medical diagnostic equipment requiring stable component supply and long-term lifecycle support.
Supply support for PDTA114EEAF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTA114EEAF belongs to NXP's resistor-equipped transistor (RET) family, engineered specifically to simplify digital switching designs in space- and cost-sensitive automotive and industrial electronics by integrating precision bias networks into ultra-small packages.
FAQ
What is the maximum collector-emitter voltage rating for PDTA114EEAF?
The PDTA114EEAF has a maximum collector-emitter voltage (VCEO) rating of −50 V under open-base conditions. This specification ensures reliable operation in 24 V automotive and industrial systems with transient overvoltage margins. The −50 V rating is confirmed in Table 2 (Quick reference data) and Table 6 (Limiting values) of the official NXP product data sheet Rev. 10.
Does PDTA114EEAF require external base resistors?
No, the PDTA114EEAF does not require external base resistors because it integrates R1 = 10 kΩ and R2 = 10 kΩ monolithically. These built-in resistors provide fixed biasing for predictable switching behavior, reducing component count and PCB area. This feature is explicitly stated in the General description and Quick reference data sections of the NXP PDTA114E_SER datasheet.
Is PDTA114EEAF qualified for automotive applications?
Yes, the PDTA114EEAF is AEC-Q101 qualified, as documented in Section 8.1 (Quality information) of the NXP product data sheet. This qualification confirms compliance with stress test requirements for discrete semiconductors used in automotive environments, including temperature cycling, humidity, and mechanical robustness testing.
What package type is used for PDTA114EEAF?
The PDTA114EEAF uses the SOT416 package, also known as SC-75, a 3-lead ultra-small surface-mount plastic package measuring 1.8 mm × 1.4 mm × 0.9 mm. This is confirmed in Table 1 (Product overview), Table 4 (Ordering information), and Figure 12 (Package outline) of the NXP PDTA114E_SER datasheet.
What is the typical DC current gain (hFE) of PDTA114EEAF?
The PDTA114EEAF has a minimum DC current gain (hFE) of 30 at VCE = −5 V and IC = −5 mA, as specified in Table 8 (Characteristics). This gain value reflects the performance of the internal PNP transistor and is sufficient for reliable digital switching applications where precise linear amplification is not required.
PDTA114EEAF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 10 kOhms
- Resistor - Emitter Base (R2):
- 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- 180 MHz
- Power - Max:
- 150 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-75
PDTA114EEAF FAQ
1.How can I place an order for PDTA114EEAF through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA114EEAF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA114EEAF reliable?
The price and inventory of PDTA114EEAF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA114EEAF is usually 5 days.
3.What payment methods are accepted for PDTA114EEAF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA114EEAF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTA114EEAF?
PDTA114EEAF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTA114EEAF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTA114EEAF?
For technical support, including PDTA114EEAF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA114EEAF requirements.
6.How does Aetrix verify that PDTA114EEAF is sourced from the original manufacturer or authorized distributors?
All PDTA114EEAF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA114EEAF meets industry standards.
7.What is the process for return or replacement of PDTA114EEAF?
All PDTA114EEAF units undergo pre-shipment inspection (PSI). If there is an issue with PDTA114EEAF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA114EEAF part is unused and in its original packaging.
Return procedure for PDTA114EEAF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PDTA114EEAF Tags

-
MUN5211T1G
onsemi

-
DTC043ZEBTL
Rohm Semiconductor

-
DTC114EKAT146
Rohm Semiconductor

-
DDTD113ZC-7-F
Diodes Incorporated

-
DRDNB16W-7
Diodes Incorporated

-
PDTC114ET,215
Nexperia USA Inc.

-
PDTC143ZT,215
Nexperia USA Inc.

-
PDTC143ET,215
Nexperia USA Inc.

-
PDTC143XT,215
Nexperia USA Inc.

-
MMUN2211LT1G
onsemi

-
PDTC144ET,215
Nexperia USA Inc.

-
PDTC124ET,215
Nexperia USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

