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NXP Semiconductors PDTA114EK,115

Part No.:
PDTA114EK,115
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPDTA114EK,115.pdf
Description:
TRANS PREBIAS PNP 50V 0.1A SMT3
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,299

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Product details

Overview

PDTA114EK,115 from Nexperia (formerly Philips Semiconductors) is a PNP resistor-equipped transistor with integrated 10 kΩ base bias resistors (R1 = R2 = 10 kΩ), designed for simplified switching in low-power digital interface circuits. It features −50 V VCEO, −100 mA IO, and SOT346 (SC-59) surface-mount package, commonly used in level-shifting and logic buffer applications.

For engineers reviewing the PDTA114EK,115 datasheet, PDTA114EK,115 pinout, PDTA114EK,115 application, or PDTA114EK,115 equivalent, key selection criteria include its built-in bias network, guaranteed −1.8 V Vi(on) threshold, −150 mV VCE(sat) at −10 mA/−0.5 mA drive, and compatibility with reflow-only assembly per JEDEC J-STD-020.

Technical Context

This device integrates two precision 10 kΩ resistors (R1 between base and input, R2 between base and emitter) to form a single-transistor digital switch with fixed current-limiting and turn-on/off control. Its PNP topology enables active-low signal inversion and high-side switching without external bias components.

Designed for DC-coupled logic interfacing, it operates reliably across −65 °C to +150 °C ambient, supports ≤−100 mA peak collector current, and delivers consistent hFE ≥30 at −5 mA IC, enabling predictable gain in saturated-switch mode.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V - Maximum safe collector-emitter voltage under open-base condition; defines off-state blocking capability in high-side switch configurations.
IO (DC)−100 mA - Continuous output current rating; sets maximum load drive capacity in steady-state switching applications.
R1 / R210 kΩ ±30% - Matched internal bias resistors; eliminates need for external pull-up/pull-down networks in GPIO interface circuits.
VCE(sat)−150 mV max at IC = −10 mA, IB = −0.5 mA - Low saturation voltage ensures minimal power loss and heat generation during on-state operation.
Vi(on)−2.5 V to −1.8 V - Input voltage range guaranteeing reliable turn-on; enables direct connection to 3.3 V or 5 V logic outputs without level translation.
Ptot250 mW at Tamb ≤25 °C - Total power dissipation limit in SOT346 package; determines thermal derating requirements in compact PCB layouts.

Pinout & Package

Package: SOT346 (TO-236, SC-59), plastic surface-mounted, 3-lead package with standard lead pitch of 1.9 mm and body dimensions 2.9 × 1.3 × 1.0 mm.

Pin/TerminalCircuit RoleDesign Meaning
1BaseInternal node connecting R1 (input) and R2 (emitter feedback); no external base connection required for standard switching use.
2EmitterCommon reference terminal for bias network and output current return path; tied to system ground or negative rail in high-side configurations.
3CollectorMain switched output terminal; connects to load and positive supply in high-side switch topologies or to pull-up in inverter stages.

Key Features

FeatureDesign Value
Integrated R1/R2 bias networkEliminates two external resistors per switch, reducing BOM count and PCB area by ~1.5 mm² in typical 3.3 V logic interface designs.
Guaranteed Vi(on) windowEnsures robust turn-on with standard CMOS/TTL outputs (e.g., 74LVC, ARM GPIO), avoiding marginal switching near logic thresholds.
Low VCE(sat)Reduces conduction loss to <0.15 mW at 10 mA, critical for battery-powered sensor nodes and always-on status indicators.
Reflow-solder compatibleQualified for lead-free reflow per JEDEC J-STD-020, supporting automated SMT assembly without wave soldering constraints.

Applications

Logic Level TranslationHigh-Side Load Switch

Use Scenario: Interfacing 3.3 V microcontroller GPIO to 5 V peripheral enable lines.

IC Role / Device Role / Timing Role: PNP digital switch providing active-low level shift with no external components.

Use Value: Enables direct connection without voltage dividers or dedicated level translators, saving board space and cost in mixed-voltage systems.

Use Scenario: Controlling power to an LED string or small solenoid from a microcontroller output.

IC Role / Device Role / Timing Role: High-side switch with built-in current limiting and fast turn-off via R2 feedback.

Use Value: Delivers <150 mV dropout at 10 mA, minimizing wasted power and thermal rise in space-constrained IoT end nodes.

Inverter CircuitGPIO Current Amplifier

Use Scenario: Converting active-high sensor alert signals to active-low interrupt inputs on legacy MCUs.

IC Role / Device Role / Timing Role: Single-transistor inverter with defined hFE ≥30 and sub-µs propagation delay.

Use Value: Provides clean signal polarity reversal with predictable timing and no additional gate delays from logic ICs.

Use Scenario: Driving higher-current optocouplers or relay coils from low-drive MCU pins.

IC Role / Device Role / Timing Role: Current-gain stage with −100 mA IO rating and integrated base bias stability.

Use Value: Allows safe operation at full rated output without risk of base overdrive or thermal runaway due to resistor matching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP digital transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
PDTC114EKNPN complement with identical R1/R2 values, SOT346 package, and matching VCEO/IO ratings.Requires inverted logic drive (active-high input) and low-side switching topology instead of high-side.Select PDTC114EK when circuit architecture uses grounded-load configuration and active-high control signals.
NSV11201T1GPNP RET with R1 = 10 kΩ, R2 = 10 kΩ, but rated for −60 V VCEO and −200 mA IO; SOT-23 package.Higher voltage/current capability and smaller footprint, but requires layout revision due to different pinout (1=Emitter, 2=Base, 3=Collector).Choose NSV11201T1G for enhanced ruggedness in industrial controls where >−50 V transients occur or where board area is constrained.

Compared with PDTC114EK and NSV11201T1G, PDTA114EK,115 provides optimal balance of proven reliability, standardized SOT346 pinout for legacy designs, and precise −1.8 V Vi(on) for seamless integration with modern low-voltage logic families.

Availability

PDTA114EK,115 is available at Aetrix Electronics and suitable for logic interface design, high-side switching, and inverter circuits requiring stable component supply, long-term obsolescence management, and traceable sourcing for automotive infotainment modules, industrial PLC I/O cards, and consumer appliance control boards.

Supply support for PDTA114EK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions, spun off from Philips Semiconductors in 2017 and headquartered in Nijmegen, Netherlands.

The PDTA114EK,115 belongs to Nexperia's Resistor-Equipped Transistor (RET) product line, engineered specifically for reducing component count and improving assembly yield in digital signal conditioning and power switching applications across consumer, industrial, and automotive markets.

FAQ

What is the pin configuration of PDTA114EK,115?

The PDTA114EK,115 uses SOT346 package with pin 1 = Base, pin 2 = Emitter, pin 3 = Collector. This configuration is confirmed in the "Simplified outline, symbol and pinning" section of the official datasheet and matches the standard pinout for all PDTA114E-series variants in SOT346. No external base connection is needed due to internal R1/R2 network.

Does PDTA114EK,115 support lead-free reflow soldering?

Yes, PDTA114EK,115 is qualified for lead-free reflow soldering per JEDEC J-STD-020. The datasheet explicitly states "Reflow soldering is the only recommended soldering method" and specifies thermal profiles compatible with standard Pb-free processes. This makes PDTA114EK,115 suitable for RoHS-compliant manufacturing lines without requiring special handling.

What is the typical Vi(on) for PDTA114EK,115 and how does it affect logic interfacing?

The typical Vi(on) for PDTA114EK,115 is −1.8 V, with a guaranteed range of −2.5 V to −1.8 V at IC = −10 mA and VCE = −0.3 V. This ensures reliable turn-on when driven by 3.3 V or 5 V logic outputs, as the input sees sufficient reverse bias across R1 to activate the PNP junction without requiring additional pull-down resistors or level shifters in the PDTA114EK,115 circuit.

Can PDTA114EK,115 replace a discrete PNP transistor plus two resistors?

Yes, PDTA114EK,115 is functionally designed to replace a discrete PNP transistor (e.g., BC807) plus two 10 kΩ bias resistors. Its integrated R1 and R2 match the specified values within ±30%, and its electrical characteristics-including hFE ≥30, VCE(sat) ≤−150 mV, and VCEO = −50 V-are aligned with common general-purpose PNP devices. Using PDTA114EK,115 reduces component count, placement time, and potential mismatch errors in production.

What is the maximum operating temperature for PDTA114EK,115?

The maximum junction temperature (Tj) for PDTA114EK,115 is +150 °C, and the operating ambient temperature range is −65 °C to +150 °C. These limits are specified in the "Limiting Values" table of the datasheet and apply under standard mounting conditions. Thermal resistance from junction to ambient (Rth j-a) is 500 K/W for the SOT346 package, so proper PCB copper area must be provided to maintain Tj within spec at full 250 mW dissipation.

PDTA114EK,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMT3; MPAK

PDTA114EK,115 FAQ

1.How can I place an order for PDTA114EK,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA114EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA114EK,115 reliable?

The price and inventory of PDTA114EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA114EK,115 is usually 5 days.

3.What payment methods are accepted for PDTA114EK,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA114EK,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA114EK,115?

PDTA114EK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA114EK,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA114EK,115?

For technical support, including PDTA114EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA114EK,115 requirements.

6.How does Aetrix verify that PDTA114EK,115 is sourced from the original manufacturer or authorized distributors?

All PDTA114EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA114EK,115 meets industry standards.

7.What is the process for return or replacement of PDTA114EK,115?

All PDTA114EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA114EK,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA114EK,115 part is unused and in its original packaging.

Return procedure for PDTA114EK,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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