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NXP Semiconductors PDTA114TK,135

Part No.:
PDTA114TK,135
Manufacturer:
NXP Semiconductors
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPDTA114TK,135.pdf
Description:
TRANS PREBIAS PNP 50V 0.1A SMT3
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,539

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Product details

Overview

PDTA114TK from Nexperia is a PNP resistor-equipped transistor (RET) in SOT346 (SC-59A/TO-236) package, designed for digital switching applications with built-in 10 kΩ input bias resistor (R1), −50 V collector-emitter voltage rating, −100 mA output current capability, and −150 mV saturation voltage at IC = −10 mA/IB = −0.5 mA. It serves as a cost-saving alternative to BC857-series transistors in low-current peripheral driver and IC input control circuits.

For engineers reviewing the PDTA114TK datasheet, PDTA114TK pinout, PDTA114TK application, or PDTA114TK equivalent, this page delivers verified technical context, validated pin functions, real-world use cases in digital logic interfacing and level translation, and confirmed alternatives with documented functional and packaging differences.

Technical Context

The PDTA114TK integrates a single PNP bipolar junction transistor with one external-base bias resistor (R1 = 10 kΩ nominal, 7–13 kΩ range) and an open R2 terminal-no second resistor connected. Its internal configuration eliminates discrete base resistors in digital interface circuits, reducing component count and PCB area.

It operates as a saturated switch with guaranteed hFE ≥ 200 at IC = −1 mA/VCE = −5 V, supports ambient temperatures from −65 °C to +150 °C, and exhibits ≤ 3 pF collector capacitance at VCB = −10 V/f = 1 MHz-enabling reliable performance in high-speed digital signal routing and low-power logic buffering.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V: Maximum safe collector-emitter voltage with base open; defines absolute maximum blocking capability in switching applications.
IO −100 mA: Continuous DC output current rating; supports driving LEDs, small relays, or logic inputs without external current limiting.
R1 10 kΩ (7–13 kΩ): Integrated base bias resistor value; enables direct connection to 3.3 V or 5 V logic outputs without external components.
VCEsat −150 mV max at IC = −10 mA/IB = −0.5 mA: Low saturation voltage ensures minimal power loss and heat generation during on-state operation.
hFE ≥200 at VCE = −5 V/IC = −1 mA: High DC current gain guarantees robust switching margin even with weak drive signals.
Ptot 250 mW at Tamb ≤ 25 °C: Total power dissipation limit; determines thermal derating requirements in compact layouts.
Cc ≤3 pF at VCB = −10 V/f = 1 MHz: Low collector capacitance preserves signal integrity in >10 MHz digital edge transitions.

Pinout & Package

SOT346 (SC-59A / TO-236) is a 3-lead surface-mount plastic package measuring 3.0 × 1.7 × 1.3 mm with gull-wing leads. Thermal resistance Rth(j-a) is 500 K/W in free air, supporting moderate power handling in space-constrained designs.

Pin/Terminal Circuit Role Design Meaning
1 input (base) Connected internally to R1; accepts logic-level drive directly-no external pull-up or current-limiting resistor required.
2 GND (emitter) Common reference node tied to system ground; provides return path for base and collector currents.
3 output (collector) Switched output node; sinks current when active-ideal for active-low logic interfaces and low-side load control.

Key Features

Feature Design Value
Integrated R1 bias resistor 10 kΩ ±30 % eliminates need for external base resistor-reduces BOM count and placement steps in automated assembly.
Low VCEsat −150 mV max ensures <0.15 mW conduction loss at 10 mA-critical for battery-powered sensor nodes and energy-efficient logic buffers.
High hFE ≥200 at −1 mA enables reliable turn-on with microcontroller GPIOs delivering ≤100 µA base current-no buffer stage needed.
Wide temperature range −65 °C to +150 °C operation supports automotive under-hood and industrial motor-control environments without derating.
Small SOT346 footprint 3.0 × 1.7 mm body size saves >40 % board area vs. through-hole TO-92-enables dense routing in portable electronics.

Applications

LED Driver Circuit Microcontroller GPIO Expander

Use Scenario: Driving indicator LEDs from 3.3 V MCU pins with limited sink current capability.

IC Role / Device Role / Timing Role: Low-side switch that sinks LED current to ground when enabled by MCU output.

Use Value: Built-in 10 kΩ R1 allows direct connection to GPIO-no external resistor needed-reducing parts count and layout complexity.

Use Scenario: Extending digital I/O count using discrete logic-level translators for sensor interface lines.

IC Role / Device Role / Timing Role: Signal inverter and level shifter between 5 V legacy peripherals and 3.3 V microcontrollers.

Use Value: −150 mV VCEsat ensures clean low-state voltage (<0.2 V) compatible with TTL and CMOS input thresholds.

Logic-Level Translation Power Sequencing Control

Use Scenario: Converting open-drain I²C bus signals between 5 V master and 3.3 V slave devices.

IC Role / Device Role / Timing Role: Active-pull-down device replacing external MOSFETs or discrete BJT+resistor combos.

Use Value: ≤3 pF collector capacitance minimizes bus rise-time degradation-maintains I²C timing compliance up to 400 kHz.

Use Scenario: Enabling/disabling power rails in multi-voltage systems (e.g., FPGA core vs. I/O banks).

IC Role / Device Role / Timing Role: Enable gate for PMIC or LDO regulators controlled by system management controller.

Use Value: −100 mA IO rating supports driving enable pins of high-current regulators without additional buffering.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC114TK NPN complement with identical SOT346 package, same R1 = 10 kΩ, but opposite polarity-requires inverted logic drive. Used where active-high switching or sourcing (vs. sinking) is required; not interchangeable without circuit redesign. Select PDTC114TK only when NPN logic polarity matches system architecture-PDTA114TK remains optimal for active-low sink configurations.
BC857B,215 Standard PNP BJT (no integrated resistors); requires external 10 kΩ base resistor; SOT23 package (larger footprint than SOT346). Offers higher hFE (200–450) and same −50 V VCEO, but increases component count and layout area. Choose BC857B,215 only if design requires adjustable base bias or higher gain margin-PDTA114TK delivers superior integration for fixed-ratio digital switching.

Compared with PDTC114TK and BC857B,215, the PDTA114TK uniquely combines PNP polarity, integrated 10 kΩ biasing, SOT346 miniaturization, and −150 mV VCEsat-making it the most space- and BOM-efficient solution for standardized active-low digital interface tasks.

Availability

PDTA114TK is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, logic-level translation, and power sequencing control requiring stable component supply across automotive, industrial, and consumer electronics production programs.

Supply support for PDTA114TK includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The PDTA114TK belongs to Nexperia's PNP Resistor-Equipped Transistor (RET) family, engineered specifically to replace discrete BJT + resistor combinations in digital switching applications-reducing bill-of-materials and improving manufacturing yield.

FAQ

What is the function of the internal resistor in PDTA114TK?

The PDTA114TK contains a single integrated 10 kΩ base bias resistor (R1) connected between pin 1 (input/base) and the internal transistor base. This eliminates the need for an external resistor when driving the device from standard logic outputs, simplifying circuit design and reducing component count. R2 is open-no second resistor is present.

Can PDTA114TK be used as a direct replacement for BC857 in existing designs?

The PDTA114TK can replace BC857 in many digital switching applications, but only if the circuit uses active-low (sink) topology and does not require adjustable base bias. Unlike BC857, PDTA114TK includes a fixed 10 kΩ R1, so no external resistor is needed-but pinout differs (SOT346 vs. SOT23), requiring PCB layout revision.

What is the maximum operating temperature for PDTA114TK?

The PDTA114TK supports an ambient temperature range of −65 °C to +150 °C and a junction temperature limit of 150 °C. At full 250 mW power dissipation, thermal derating begins above 25 °C ambient-designers must verify board-level thermal performance using its 500 K/W junction-to-ambient thermal resistance.

Does PDTA114TK have a built-in emitter resistor (R2)?

No, PDTA114TK has R1 = 10 kΩ connected to the base, and R2 is explicitly open (not installed). This configuration matches standard digital input switching needs where only base bias is required-no emitter feedback or current sensing is integrated.

What is the marking code for PDTA114TK on the device body?

The PDTA114TK is marked with the code "23" on its top surface. This 2-character identifier is consistent across all units and corresponds exclusively to the PDTA114TK variant in the PDTA114T series, per Nexperia's official marking table.

PDTA114TK,135 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
1µA
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SMT3; MPAK

PDTA114TK,135 FAQ

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The price and inventory of PDTA114TK,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA114TK,135 is usually 5 days.

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All PDTA114TK,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA114TK,135 meets industry standards.

7.What is the process for return or replacement of PDTA114TK,135?

All PDTA114TK,135 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA114TK,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA114TK,135 part is unused and in its original packaging.

Return procedure for PDTA114TK,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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