Nexperia USA Inc. PDTA114YQBZ

Overview

PDTA114YQB from Nexperia is a 50 V, 100 mA PNP resistor-equipped transistor (RET) in a DFN1110D-3 (SOT8015) leadless package with side-wettable flanks. It integrates R1 = 10 kΩ and R2 = 47 kΩ bias resistors, delivers h_FE ≥ 100 at I_C = −5 mA, and achieves V_CE(sat) ≤ −100 mV under I_C = −5 mA / I_B = −0.25 mA - used for digital switching of logic-level inputs and low-power load control in space-constrained PCBs.

For engineers reviewing the PDTA114YQB datasheet, PDTA114YQB pinout, PDTA114YQB application, or PDTA114YQB equivalent, this part serves as a drop-in replacement for BC857-series PNP transistors where built-in biasing simplifies layout, reduces BOM count, and supports AOI-compatible reflow assembly on ultra-thin SMT designs.

Technical Context

This PNP RET implements a monolithic silicon transistor with two integrated precision thin-film resistors: R1 connects base to input, R2 shunts base to emitter. Its fixed R2/R1 ratio of 4.7 enables stable saturation behavior across temperature without external tuning.

The device operates with V_CEO = −50 V and I_O = −100 mA, supporting robust off-state blocking and reliable on-state conduction in digital interface and level-shifting circuits. Its −0.7 V to −0.5 V V_I(off) range ensures clean logic-low recognition in 3.3 V and 5 V systems.

Key Specifications

Pinout & Package

DFN1110D-3 (SOT8015) is a 3-terminal, leadless, ultra-thin surface-mount package with side-wettable flanks for reliable reflow solder joint inspection. Dimensions: 1.1 mm × 1.0 mm × 0.48 mm body height; 0.65 mm pitch; 0.5 mm max overall height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Compared with PDTC114YQB, PDTA114YQB provides native high-side sinking capability and logic-compatible turn-on; compared with BC857B,115, it trades external bias flexibility for reduced component count, smaller footprint, and AOI-ready manufacturability.

Availability

PDTA114YQB is available at Aetrix Electronics and suitable for industrial control interfaces, portable medical device indicators, and automotive body electronics requiring stable component supply, tight thermal management, and high-volume SMT assembly.

Supply support for PDTA114YQB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

PDTA114YQB belongs to the RET family designed specifically for digital switching applications where integration, miniaturization, and manufacturing efficiency are prioritized over analog linearity or adjustable bias.

FAQ

What is the maximum continuous collector current for PDTA114YQB?

The maximum continuous collector current is −100 mA at T_amb ≤ 25 °C on a standard FR4 PCB with 70 µm copper. Derating applies above 25 °C per Figure 1: at 85 °C ambient, maximum I_C drops to approximately −65 mA due to thermal limits.

Can PDTA114YQB replace BC857B in existing designs without layout changes?

No - PDTA114YQB uses DFN1110D-3 (SOT8015), while BC857B uses SOT23-3. The footprints are incompatible: SOT8015 has 0.65 mm pitch and side-wettable flanks; SOT23-3 has 0.95 mm pitch and gull-wing leads. A PCB redesign is required.

What is the typical transition frequency (f_T) of the internal transistor?

The transition frequency is not specified for PDTA114YQB in the datasheet. Unlike discrete transistors, RETs are optimized for DC switching, not RF performance; f_T data is only provided for the base transistor in the series' generic characterization (180 MHz), but not guaranteed per part number.

How does the built-in R2 resistor affect input leakage in off-state?

R2 (47 kΩ) provides a defined emitter-base shunt path, limiting V_EB to ≤ −0.6 V during off-state and holding I_EBO at −150 µA max. This prevents unintended turn-on from leakage currents in high-impedance digital buses and improves noise margin by 200 mV vs. bare PNP.