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Nexperia USA Inc. PDTA114YQCZ

Part No.:
PDTA114YQCZ
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
3-XDFN Exposed Pad
Datasheet:
AetrixPDTA114YQCZ.pdf
Description:
TRANS PREBIAS PNP 50V 0.1A 3DFN
Quantity:
Payment:
Payment
Shipping:
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Inventory:5,000

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Product details

Overview

PDTA114YQC from Nexperia is a 50 V, 100 mA PNP resistor-equipped transistor (RET) in a DFN1412D-3 (SOT8009) leadless SMD package with side-wettable flanks. It integrates R1 = 10 kΩ and R2 = 47 kΩ bias resistors, delivers hFE ≥ 100 at IC = −5 mA / VCE = −5 V, achieves VCE(sat) ≤ −100 mV, and is optimized for digital switching and IC input control in space-constrained PCBs.

For engineers reviewing the PDTA114YQC datasheet, PDTA114YQC pinout, PDTA114YQC application, or PDTA114YQC equivalent, this device serves as a drop-in replacement for BC857-series transistors where integrated base biasing simplifies layout, reduces BOM count, and supports AOI-compatible solder joint inspection in high-density consumer and industrial control boards.

Technical Context

This PNP RET uses an internal silicon transistor with built-in R1–R2 resistor network configured for fixed-current biasing: R1 connects base to input, R2 shunts base to emitter, enabling single-pin drive and predictable turn-on/turn-off thresholds. Its −6 V VEBO rating and −40 V to +6 V VI(on)/VI(off) range ensure robust noise immunity in 3.3 V and 5 V logic interfaces.

The DFN1412D-3 package features side-wettable flanks for automated optical inspection of solder joints, 0.48 mm body height, and thermal resistance Rth(j-a) = 278 K/W on 70 µm FR4 copper-enabling reliable operation up to 150 °C junction temperature under pulsed 100 mA loads.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −50 V: Maximum safe collector-emitter voltage before breakdown; enables use in 24 V rail switching and level-shifted signal paths.
IO −100 mA: Continuous output current capability; sufficient for driving LEDs, small relays, and logic inputs without external current limiting.
R1 / R2 10 kΩ / 47 kΩ: Precisely trimmed on-die resistors; eliminate need for two external bias components and reduce layout sensitivity to parasitic capacitance.
hFE ≥100 @ IC = −5 mA, VCE = −5 V: High DC current gain ensures low base drive current (≤0.25 mA), easing sourcing from microcontroller GPIOs.
VCE(sat) ≤ −100 mV @ IC = −5 mA, IB = −0.25 mA: Ultra-low saturation voltage minimizes power loss (<0.5 mW) and heat generation in always-on or high-duty-cycle switches.
VI(on) / VI(off) −1.4 V to −0.8 V / −0.7 V to −0.5 V: Defined input voltage thresholds enable clean logic-level compatibility with TTL and CMOS outputs across temperature.
Ptot 450 mW @ Tamb ≤ 25 °C (70 µm Cu): Sustains full-load operation on standard FR4 without heatsinking in ambient temperatures up to 75 °C.

Pinout & Package

DFN1412D-3 (SOT8009) is a 3-terminal, leadless plastic package measuring 1.4 × 1.2 × 0.48 mm with side-wettable flanks for AOI-compatible reflow soldering. Its ultra-low 0.5 mm profile supports thin-profile portable electronics and high-density routing.

Pin/Terminal Circuit Role Design Meaning
1 Input (base) Driven directly by logic signal; internal R1 connects here to base node-no external pull-up/down required.
2 GND (emitter) Emitter tied to system ground; provides return path for load current and reference for R2 resistor.
3 Output (collector) Switches high-side loads referenced to VCC; sinks current when active; compatible with open-collector interface standards.

Key Features

Feature Design Value
Integrated bias network On-die 10 kΩ (R1) and 47 kΩ (R2) resistors replace two discrete components-reducing PCB area by >0.8 mm² and eliminating placement misalignment risk.
Side-wettable flanks Exposed copper sidewalls on all three terminals enable automated optical inspection of solder fillets-critical for zero-defect manufacturing in Class III assemblies.
Low VCE(sat) ≤ −100 mV at rated current ensures <1% voltage drop across switch-preserving signal integrity in precision analog-switching and sensor excitation circuits.
High noise immunity VI(off) ≤ −0.5 V and VI(on) ≥ −1.4 V provide >0.9 V hysteresis margin-rejecting ESD transients and crosstalk in noisy industrial I/O modules.
Thermal derating support Rated 450 mW at 25 °C with linear derating to 0 mW at 150 °C junction-enables accurate thermal budgeting in sealed enclosures without forced air.

Applications

Industrial PLC Input Modules USB-C Port Power Switching

Use Scenario: Isolating and conditioning 24 V DC field signals into 3.3 V microcontroller GPIOs within DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: PNP RET acts as a level-shifting, current-limiting interface that pulls MCU input low when field voltage is present-no external resistors needed.

Use Value: Eliminates 2× 0402 resistors per channel, reducing BOM cost by $0.008/unit and improving long-term reliability by removing solder joint failure points.

Use Scenario: Enabling/disabling VCONN power delivery to USB-C plug electronics during cable insertion detection.

IC Role / Device Role / Timing Role: High-side switch controlled by USB PD controller GPIO to assert VCONN only after successful cable orientation detection.

Use Value: 100 mA rating and <100 mV VCE(sat) ensure minimal voltage drop and heat rise-meeting USB-IF VCONN regulation tolerance of ±5%.

Smart Home Sensor Nodes Automotive Body Control Module Inputs

Use Scenario: Driving status LEDs and enabling wake-up interrupts from passive IR or door-contact sensors in battery-powered IoT nodes.

IC Role / Device Role / Timing Role: Low-IQ switch providing GPIO-controlled LED current sink and interrupt line pull-down with defined threshold.

Use Value: Integrated R1/R2 guarantees consistent turn-on behavior across −40 °C to +85 °C-avoiding false triggers due to resistor drift in unregulated supply rails.

Use Scenario: Interfacing 12 V automotive switch inputs (e.g., door ajar, trunk release) to 5 V CAN transceiver enable pins.

IC Role / Device Role / Timing Role: Level translator and current buffer ensuring fast, glitch-free enable/disable transitions despite load dump transients.

Use Value: −50 V VCEO and −6 V VEBO withstand ISO 7637-2 Pulse 1/2a surges-eliminating need for TVS diodes in cost-sensitive BCM designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC114YQC NPN complement with identical R1/R2 values (10 kΩ/47 kΩ), same package, but opposite polarity and +50 V VCEO. Suitable for low-side switching only; requires inverted logic drive and cannot replace high-side PNP configurations. Select when load must be switched to ground and board layout favors NPN topology with shared emitter return.
BC857B,215 Discrete PNP BJT (no integrated resistors); hFE = 200–450; requires two external bias resistors; SOT23-3 package (larger, no SWF). Offers higher gain and wider VCEO (−45 V), but increases component count, layout area, and AOI inspection complexity. Choose only if design requires adjustable bias or higher current gain beyond 100, and space/inspection constraints are secondary.

Compared with PDTC114YQC, PDTA114YQC enables true high-side switching with logic-compatible input thresholds; versus BC857B, it trades gain adjustability for BOM reduction, smaller footprint, and guaranteed bias stability-making it optimal for volume production of compact digital interfaces.

Availability

PDTA114YQC is available at Aetrix Electronics and suitable for industrial PLC input modules, USB-C port power management, smart home sensor nodes, and automotive body control module interfaces requiring stable component supply, consistent parametric performance, and AOI-ready packaging.

Supply support for PDTA114YQC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-delivering high-performance, reliable, and scalable components for automotive, industrial, and consumer markets.

The PDTA114YQC belongs to Nexperia's resistor-equipped transistor (RET) product line, engineered specifically to replace discrete BJT + resistor combinations in digital logic interfacing, thereby accelerating time-to-market and improving manufacturing yield in high-volume SMT assembly.

FAQ

What is the maximum continuous collector current for PDTA114YQC?

The PDTA114YQC is rated for −100 mA continuous collector current (IO) at Tamb ≤ 25 °C on a standard FR4 PCB with 70 µm copper. Derating applies above 25 °C: power dissipation drops linearly to 0 mW at 150 °C junction temperature, supporting sustained operation up to −70 mA at 75 °C ambient.

Can PDTA114YQC replace BC857B in existing designs without layout changes?

No-PDTA114YQC uses a DFN1412D-3 (SOT8009) 1.4 × 1.2 mm package with side-wettable flanks, while BC857B uses SOT23-3 (3.0 × 1.4 mm). Footprint, solder stencil, and reflow profile differ significantly. A redesign is required to accommodate the smaller, leadless package and leverage its integrated biasing benefits.

What is the purpose of the side-wettable flanks on the DFN1412D-3 package?

Side-wettable flanks expose vertical copper surfaces on all three terminals, allowing automated optical inspection (AOI) systems to verify solder fillet formation and wetting quality-critical for detecting head-in-pillow defects and insufficient solder in high-reliability manufacturing. This feature is not present in standard DFN packages.

How does the built-in resistor network affect input drive requirements?

The integrated 10 kΩ (R1) and 47 kΩ (R2) resistors set a fixed base current path: applying −1.0 V to Pin 1 draws ~0.1 mA into R1, yielding ~0.25 mA effective base drive. This eliminates external resistor selection, ensures consistent switching thresholds across temperature, and allows direct connection to 3.3 V/5 V GPIOs without additional logic-level translation.

PDTA114YQCZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
3-XDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
10 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA
Frequency - Transition:
180 MHz
Power - Max:
360 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN1412D-3

PDTA114YQCZ FAQ

1.How can I place an order for PDTA114YQCZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA114YQCZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA114YQCZ reliable?

The price and inventory of PDTA114YQCZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA114YQCZ is usually 5 days.

3.What payment methods are accepted for PDTA114YQCZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA114YQCZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA114YQCZ?

PDTA114YQCZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA114YQCZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA114YQCZ?

For technical support, including PDTA114YQCZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA114YQCZ requirements.

6.How does Aetrix verify that PDTA114YQCZ is sourced from the original manufacturer or authorized distributors?

All PDTA114YQCZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA114YQCZ meets industry standards.

7.What is the process for return or replacement of PDTA114YQCZ?

All PDTA114YQCZ units undergo pre-shipment inspection (PSI). If there is an issue with PDTA114YQCZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA114YQCZ part is unused and in its original packaging.

Return procedure for PDTA114YQCZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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