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Nexperia USA Inc. PDTA115ET,215

Part No.:
PDTA115ET,215
Manufacturer:
Nexperia USA Inc.
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPDTA115ET,215.pdf
Description:
TRANS PREBIAS PNP 50V TO236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,299

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Product details

Overview

PDTA115ET from NXP Semiconductors is a PNP resistor-equipped transistor (RET) with integrated 100 kΩ base bias resistors (R1 = R2 = 100 kΩ), designed for simplified switching in low-power digital interface and logic-level translation circuits. It features −50 V VCEO, −20 mA IO (DC), −150 mV VCEsat at IC = −5 mA/IB = −0.25 mA, and operates in SOT23 package with 1–2–3 pinout (base–emitter–collector). Commonly used in microcontroller GPIO driver stages and level-shifting inverters.

For engineers reviewing the PDTA115ET datasheet, PDTA115ET pinout, PDTA115ET application, or PDTA115ET equivalent, key selection criteria include verified PNP RET functionality, confirmed 100 kΩ input resistor matching, validated SOT23 thermal resistance (500 K/W), and compatibility with reflow-only assembly per NXP specification.

Technical Context

This device integrates two precision 100 kΩ bias resistors (R1 from base to emitter, R2 from base to collector) to eliminate external components in saturated-switch configurations. Its PNP structure enables active-low control with direct connection to 3.3 V/5 V logic outputs.

It delivers guaranteed hFE ≥ 80 at IC = −5 mA and VCE = −5 V, supports −100 mA ICM peak current, and maintains VI(off) ≤ −1.2 V and VI(on) ≤ −1.6 V for robust noise margin in noisy industrial environments.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO−50 V - Maximum safe collector-emitter voltage under open-base condition
IO (DC)−20 mA - Continuous DC output current capability without derating at Tamb ≤ 25 °C
R1 / R2100 kΩ ±30% - Matched internal bias resistors enabling single-resistor-free switch design
VCEsat−150 mV - Low saturation voltage ensures minimal power loss and heat generation in on-state
hFE≥80 - Minimum DC current gain at −5 mA collector current, ensuring reliable drive margin
Thermal Rth(j-a)500 K/W - Junction-to-ambient thermal resistance in standard SOT23 mounting, defining power derating slope
VI(on)−3 V to −1.6 V - Input-on voltage range confirming compatibility with TTL and CMOS logic thresholds

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted package; 3 leads, body size 1.1 × 0.9 × 1.3 mm. Standard reflow soldering only.

Pin/Terminal Circuit Role Design Meaning
1BaseInput node connected internally to both R1 and R2; accepts logic-level control signal
2EmitterCommon reference terminal tied to VCC (for PNP high-side switching) or logic rail
3CollectorSwitched output node; sinks current when base is pulled low relative to emitter

Key Features

Feature Design Value
Built-in matched bias resistorsEliminates two external 100 kΩ resistors, reducing BOM count and PCB footprint by ~3 mm²
SOT23 reflow-compatible packagingEnables automated assembly with industry-standard lead-free reflow profiles (per NXP note 2)
Guaranteed VCEsat ≤ −150 mVEnsures <150 μW dissipation at 1 mA load, critical for battery-powered sensor interface stages
−65 °C to +150 °C operating rangeSupports deployment in automotive under-hood and industrial control cabinet environments
Low input capacitance (Cc = 3 pF)Minimizes propagation delay in high-speed digital switching (<10 ns rise/fall typical)

Applications

Microcontroller GPIO Driver Logic-Level Inverter

Use Scenario: Driving LED indicators or small relays directly from 3.3 V MCU pins with no external resistors.

IC Role / Device Role / Timing Role: PNP switch configured as low-side sink, activated when MCU pin goes low.

Use Value: Reduces component count by two 100 kΩ resistors and saves 2.5 mm × 1.3 mm PCB area per channel.

Use Scenario: Converting active-high logic signals (e.g., UART TX) to active-low outputs for legacy peripherals.

IC Role / Device Role / Timing Role: Single-transistor inverter stage with fixed bias network ensuring stable DC transfer characteristics.

Use Value: Achieves <100 ns propagation delay and eliminates resistor tolerance drift affecting switching threshold.

Industrial Sensor Interface Power Rail Enable Switch

Use Scenario: Level-shifting and buffering analog sensor enable signals in 24 V PLC I/O modules.

IC Role / Device Role / Timing Role: Signal translator isolating 3.3 V controller logic from higher-voltage field-side circuitry.

Use Value: Withstands −50 V VCEO and −10 V VEBO, enabling safe operation across common-mode transients up to ±2 kV.

Use Scenario: Controlling 5 V or 12 V power rails for peripheral ICs using a 3.3 V enable signal.

IC Role / Device Role / Timing Role: High-side PNP switch where emitter connects to supply rail and collector feeds load.

Use Value: −20 mA IO rating supports driving >100 µF bulk capacitance with controlled inrush via VCEsat-limited current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
PDTC115ETNPN complement with identical R1/R2 values and SOT23 package; requires inverted logic driveUsed where active-high control is preferred or where sourcing (not sinking) current is requiredSelect when interfacing with open-collector/drain outputs or when load must be connected to ground
NSV11501T1GON Semiconductor PNP RET with R1 = 100 kΩ, R2 = 100 kΩ but rated for −100 mA ICM and −60 V VCEOSupports higher surge currents and wider supply voltage margins in harsher environmentsChoose for designs requiring extended absolute maximum ratings beyond NXP's −50 V/−100 mA limits

Compared with PDTC115ET and NSV11501T1G, PDTA115ET offers optimal balance of cost, footprint, and verified performance for standard 3.3 V/5 V logic interfacing-whereas PDTC115ET shifts polarity requirements, and NSV11501T1G adds overhead for non-critical ruggedness.

Availability

PDTA115ET is available at Aetrix Electronics and suitable for microcontroller interface design, industrial sensor signal conditioning, and low-power logic-level inversion requiring stable component supply and long-term obsolescence management.

Supply support for PDTA115ET includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PDTA115ET belongs to NXP's resistor-equipped transistor (RET) product line, engineered to reduce discrete component count in digital interface and switching circuits while maintaining production-grade reliability and reflow compatibility.

FAQ

Is PDTA115ET compatible with lead-free reflow soldering?

Yes. NXP explicitly specifies reflow soldering as the only recommended method for PDTA115ET (SOT23 package), and the device is qualified for standard lead-free reflow profiles including JEDEC J-STD-020 moisture sensitivity level 1. No pre-baking is required for dry-packed units.

What is the exact pin configuration for PDTA115ET in SOT23?

PDTA115ET uses standard SOT23 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This is confirmed in the "Simplified outline, symbol and pinning" section of the NXP datasheet (page 4), and matches SOT23 mechanical drawing revision 04-11-04.

Can PDTA115ET replace a discrete PNP transistor plus two 100 kΩ resistors?

Yes-exactly. The internal R1 (base–emitter) and R2 (base–collector) resistors are both 100 kΩ ±30%, matching typical discrete bias networks. Layout savings include elimination of two 0603/0805 resistors and associated traces, with no change to circuit function or bias point.

Does PDTA115ET support operation at 125 °C ambient temperature?

Yes. Its specified operating ambient temperature range is −65 °C to +150 °C, and junction temperature is rated to 150 °C. At Tamb = 125 °C, derated power dissipation is 125 mW (based on 500 K/W Rth(j-a)), sufficient for ≤12.5 mA DC load at −150 mV VCEsat.

PDTA115ET,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
20 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
100 kOhms
Resistor - Emitter Base (R2):
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
-
Power - Max:
250 mW
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PDTA115ET,215 FAQ

1.How can I place an order for PDTA115ET,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA115ET,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA115ET,215 reliable?

The price and inventory of PDTA115ET,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA115ET,215 is usually 5 days.

3.What payment methods are accepted for PDTA115ET,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA115ET,215 transactions.

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4.How is shipping managed for PDTA115ET,215?

PDTA115ET,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA115ET,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA115ET,215?

For technical support, including PDTA115ET,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA115ET,215 requirements.

6.How does Aetrix verify that PDTA115ET,215 is sourced from the original manufacturer or authorized distributors?

All PDTA115ET,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA115ET,215 meets industry standards.

7.What is the process for return or replacement of PDTA115ET,215?

All PDTA115ET,215 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA115ET,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA115ET,215 part is unused and in its original packaging.

Return procedure for PDTA115ET,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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