NXP Semiconductors PDTA115TE,115

Overview

PDTA115TE from Nexperia is a PNP resistor-equipped transistor (RET) with integrated 100 kΩ input bias resistor (R1), open R2 configuration, −50 V V_CEO, −100 mA I_O, and SOT416 (SC-75) package. It functions as a single-chip switching solution in low-power digital interface circuits, replacing discrete BJT + two resistors in level-shifting and signal inversion applications.

For engineers reviewing the PDTA115TE datasheet, PDTA115TE pinout, PDTA115TE application, or PDTA115TE equivalent, key selection criteria include its built-in R1 value, PNP polarity, SOT416 thermal resistance (833 K/W), collector-emitter saturation voltage (−150 mV at −5 mA/−0.25 mA), and suitability for space-constrained 3.3 V/5 V logic interfacing.

Technical Context

This device integrates a PNP bipolar transistor with a precision 100 kΩ base-input resistor (R1) and no second resistor (R2 = open), enabling direct connection to CMOS/TTL outputs without external bias components. Its −50 V V_CEO and −100 mA I_O rating support robust operation in industrial control I/O stages.

The SOT416 package delivers compact footprint (1.75 × 1.45 × 0.95 mm) and thermal performance optimized for reflow-only assembly per JEDEC J-STD-020. Device behavior follows standard PNP DC gain (h_FE ≥ 100 at −1 mA) and low V_CEsat characteristics under specified drive conditions.

Key Specifications

Pinout & Package

SOT416 (SC-75) is a plastic surface-mounted package with 3 leads, dimensions 1.75 × 1.45 × 0.95 mm, optimized for high-density PCB layouts and reflow soldering only.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Compared with PDTA115TE, PDTC115TE offers complementary NPN functionality for sink-based topologies, while PDTA123EE,115 provides dual-resistor biasing for enhanced switching control-neither is pin-compatible, requiring layout or schematic changes for substitution.

Availability

PDTA115TE is available at Aetrix Electronics and suitable for LED indicator drivers, microcontroller GPIO interfaces, industrial digital input protection, and small-signal signal inversion requiring stable component supply and long-term manufacturability.

Supply support for PDTA115TE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business, with focus on automotive, industrial, computing, consumer, and wearable markets.

The PDTA115TE belongs to Nexperia's PNP resistor-equipped transistor (RET) family, designed specifically to simplify digital interface design by integrating bias resistors into ultra-small packages for space- and cost-sensitive applications.

FAQ

What is the function of R2 in the PDTA115TE?

The PDTA115TE has R2 = open, meaning no internal resistor connects base to emitter. This configuration allows direct use as a simple switch with only R1 controlling base current, avoiding unintended emitter shunting that could degrade noise immunity or switching speed. The absence of R2 is explicitly defined in the datasheet for the PDTA115TE and distinguishes it from dual-resistor RET variants like PDTA123EE,115.

Can PDTA115TE be used in place of a standard PNP BJT like BC807?

Yes, PDTA115TE can replace discrete PNP BJTs such as BC807 in switching applications, but only when the circuit benefits from integrated R1 and does not require adjustable base bias. Unlike BC807, PDTA115TE eliminates the need for an external base resistor, simplifying layout-but its fixed 100 kΩ R1 restricts drive current flexibility. Designers must verify that the resulting I_B meets h_FE requirements for the target I_C in each PDTA115TE application.

What is the maximum ambient temperature for continuous operation of PDTA115TE?

The PDTA115TE supports continuous operation from −65 °C to +150 °C ambient temperature, per its limiting values table. However, derating applies above 25 °C: total power dissipation drops linearly from 150 mW at 25 °C to zero at 150 °C junction temperature, governed by its 833 K/W thermal resistance. Real-world max ambient depends on PCB copper area and airflow; for sealed enclosures, sustained operation above 85 °C ambient requires thermal simulation confirming T_j < 150 °C.

Is PDTA115TE compatible with lead-free reflow profiles?

Yes, PDTA115TE is qualified for lead-free reflow soldering per JEDEC J-STD-020, with peak temperature up to 260 °C. The datasheet explicitly states "reflow soldering is the only recommended soldering method" and prohibits wave soldering. Its SOT416 package construction and internal die attach are engineered for thermal shock resilience during standard Pb-free profile ramp-soak-reflow cycles, making PDTA115TE suitable for RoHS-compliant manufacturing lines.

How does the SOT416 package of PDTA115TE compare to SOT23 in size and thermal performance?

The SOT416 package of PDTA115TE measures 1.75 × 1.45 mm, ~30% smaller than SOT23 (3.0 × 1.4 mm), enabling denser routing in portable electronics. Thermally, SOT416 has higher R_th(j-a) (833 K/W vs. 500 K/W for SOT23), meaning it dissipates heat less efficiently in still air. This trade-off favors SOT416 where board space is critical and power levels stay below ~50 mW; for higher loads, SOT23 or larger packages provide better thermal headroom. Both share 0.65 mm pin pitch and reflow compatibility.