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NXP Semiconductors PDTA123EK,115
- Part No.:
- PDTA123EK,115
- Manufacturer:
- NXP Semiconductors
- Category:
- Single, Pre-Biased Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PDTA123EK,115.pdf
- Description:
- TRANS PREBIAS PNP 50V 0.1A SMT3
- Quantity:
- Payment:
- Shipping:
Inventory:4,506
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Product details
Overview
PDTA123EK,115 from NXP Semiconductors is a PNP resistor-equipped transistor with integrated 2.2 kΩ base bias resistors (R1 and R2), designed for general-purpose switching in low-power digital interface circuits. It supports −100 mA DC output current, −50 V collector-emitter voltage, and operates up to +150 °C junction temperature in SOT346 (SC-59) surface-mount package.
For engineers reviewing the PDTA123EK,115 datasheet, PDTA123EK,115 pinout, PDTA123EK,115 application, or PDTA123EK,115 equivalent, key selection criteria include built-in bias network simplification, guaranteed VCEsat ≤ −150 mV at −10 mA/−0.5 mA, input-off voltage range (−1.2 V to −0.5 V), and thermal resistance of 500 K/W in its SOT346 package.
Technical Context
The PDTA123EK,115 integrates two precision 2.2 kΩ resistors (R1 = base-to-emitter, R2 = base-to-collector) to form a monolithic PNP digital transistor with fixed bias configuration. Its internal topology eliminates external base resistors and ensures consistent turn-on/off behavior across temperature and process variation.
It delivers DC current gain (hFE) ≥ 30 at VCE = −5 V and IC = −20 mA, with collector-emitter saturation voltage specified at −150 mV maximum under defined drive conditions. Input voltage limits are ±12 V (negative) and +10 V (positive), supporting robust interfacing with TTL and CMOS logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −50 V: Maximum safe collector-emitter voltage with open base; defines off-state blocking capability in switching applications. |
| IO (DC) | −100 mA: Continuous output current rating; sets upper bound for load-driving capacity in interface/driver stages. |
| R1 / R2 | 2.2 kΩ ±30%: Integrated base bias resistors enable single-resistor-free operation; reduces BOM count and layout area. |
| VCEsat | ≤ −150 mV at IC = −10 mA, IB = −0.5 mA: Low saturation voltage minimizes power loss and heat generation in active switching. |
| Vi(off) | −1.2 V to −0.5 V: Input voltage threshold below which device remains reliably off; ensures noise immunity in digital control lines. |
| Ptot | 250 mW at Tamb ≤ 25 °C: Total power dissipation limit in SOT346 package; constrains continuous power handling without heatsinking. |
| Rth(j-a) | 500 K/W: Junction-to-ambient thermal resistance in standard mounting; determines temperature rise per watt of dissipated power. |
Pinout & Package
Package: SOT346 (SC-59), plastic surface-mounted package with 3 leads; body dimensions 3.1 mm × 1.7 mm × 1.3 mm; suitable for reflow soldering only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Input terminal connected internally to R1 and R2; accepts logic-level control signal directly without external bias components. |
| 2 | Emitter | Common reference node for PNP operation; tied to higher potential (e.g., VCC) in high-side switch configurations. |
| 3 | Collector | Output terminal delivering switched current to load; connects to load return path (e.g., ground) in typical sink-switch topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in bias resistors (R1 = R2 = 2.2 kΩ) | Eliminates need for two external base resistors, reducing PCB footprint and assembly cost by up to 2 components per channel. |
| VCEsat ≤ −150 mV @ IC = −10 mA | Ensures minimal conduction loss in low-voltage logic-level switching, critical for battery-powered and thermally constrained designs. |
| hFE ≥ 30 @ IC = −20 mA | Provides predictable current amplification for reliable digital on/off control without gain-dependent timing uncertainty. |
| Vi(off) range: −1.2 V to −0.5 V | Guarantees turn-off margin against common-mode noise and supply rail droop in mixed-signal systems. |
Applications
| Logic-Level Inverter | Microcontroller GPIO Driver |
|---|---|
Use Scenario: Converting 3.3 V or 5 V microcontroller output to inverted active-low signal driving LED indicators or enable inputs. IC Role / Device Role: Single-transistor inverting switch with integrated bias network. Use Value: Eliminates external base resistor pair while maintaining <150 mV saturation drop, enabling direct connection to MCU pins without level-shifting. | Use Scenario: Driving small solenoids, relays, or optocouplers from resource-constrained embedded controllers. IC Role / Device Role: General-purpose PNP load switch configured as high-side driver. Use Value: −100 mA output rating and guaranteed hFE ≥ 30 ensure stable activation of 5–12 V inductive loads with minimal software overhead. |
| Level Translation Interface | Power Rail Enable Control |
Use Scenario: Interfacing between 1.8 V FPGA I/O and 5 V peripheral logic where voltage translation is required. IC Role / Device Role: Digital translator using emitter-follower or common-emitter configuration. Use Value: Input voltage tolerance (±12 V) and defined Vi(off)/Vi(on) thresholds support robust cross-voltage-domain signaling without additional protection circuitry. | Use Scenario: Enabling/disabling auxiliary power rails (e.g., sensor bias, analog front-end) in portable instrumentation. IC Role / Device Role: High-side enable switch controlling VCC delivery to downstream subsystems. Use Value: −50 V VCEO rating and 150 °C max junction temperature allow safe operation in automotive and industrial environments with wide supply excursions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP digital transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PDTC123EK | NPN complement with identical R1/R2 values (2.2 kΩ), same SOT346 package and pinout (1=base, 2=collector, 3=emitter). | Requires inverted logic drive and low-side switching topology instead of high-side; not interchangeable without circuit redesign. | Select PDTC123EK when sourcing NPN logic-compatible switches or building complementary push-pull stages. |
| NSV123EWT1G | Onsemi PNP RET with same R1/R2 (2.2 kΩ), but in SOT-323 (SC-70) package; Rth(j-a) = 625 K/W vs. 500 K/W for PDTA123EK,115. | Smaller footprint but higher thermal resistance; requires tighter thermal management at >50 mA continuous load. | Choose NSV123EWT1G only if board space is critical and power dissipation remains below 100 mW. |
Compared with PDTC123EK and NSV123EWT1G, the PDTA123EK,115 offers optimal thermal performance in the widely adopted SOT346 package, making it preferred for medium-current switching where reliability and manufacturability outweigh ultra-compact size requirements.
Availability
PDTA123EK,115 is available at Aetrix Electronics and suitable for logic-level inversion, microcontroller GPIO expansion, and power rail enable control requiring stable component supply across industrial automation, consumer electronics, and automotive sub-systems.
Supply support for PDTA123EK,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.
The PDTA123EK,115 belongs to NXP's resistor-equipped transistor (RET) product line, engineered to simplify digital switching circuits by integrating precision bias resistors-targeting cost-sensitive, high-volume applications in consumer and industrial control systems.
FAQ
What is the pin configuration of PDTA123EK,115?
The PDTA123EK,115 uses SOT346 (SC-59) package with pin 1 = Base, pin 2 = Emitter, and pin 3 = Collector. This configuration matches the simplified outline shown in Figure 3 of the official NXP datasheet (2004 Aug 02), and is validated across ordering information and pinning tables for the PDTA123E series.
Does PDTA123EK,115 require external base resistors?
No, the PDTA123EK,115 does not require external base resistors because it integrates R1 and R2 (both 2.2 kΩ) internally. This design eliminates two discrete components per channel, reduces PCB area, and ensures consistent biasing across temperature and manufacturing variation-confirmed in the "Features" and "Quick Reference Data" sections of the NXP datasheet.
What is the maximum continuous collector current for PDTA123EK,115?
The maximum continuous DC collector current (IO) for PDTA123EK,115 is −100 mA, as specified in the "Quick Reference Data" and "Limiting Values" tables of the NXP datasheet. This rating applies at Tamb ≤ 25 °C with standard mounting; derating is required above ambient temperatures per the thermal characteristics table.
Can PDTA123EK,115 be used in place of a standard PNP BJT like BC807?
The PDTA123EK,115 is not a drop-in replacement for discrete BJTs like BC807 due to its integrated bias network and fixed pinout. While both are PNP transistors, the PDTA123EK,115 expects logic-level input at the base pin and delivers defined switching behavior without external resistors-unlike BC807, which requires external biasing. Circuit redesign is necessary for substitution.
What is the thermal resistance (Rth(j-a)) of PDTA123EK,115?
The thermal resistance from junction to ambient (Rth(j-a)) for PDTA123EK,115 is 500 K/W under standard mounting conditions on FR4 PCB, as documented in the "Thermal Characteristics" section of the NXP datasheet. This value assumes reflow soldering and applies specifically to the SOT346 package variant.
PDTA123EK,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Pre-Biased
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Resistor - Base (R1):
- 2.2 kOhms
- Resistor - Emitter Base (R2):
- 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max):
- 1µA
- Frequency - Transition:
- -
- Power - Max:
- 250 mW
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMT3; MPAK
PDTA123EK,115 FAQ
1.How can I place an order for PDTA123EK,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PDTA123EK,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PDTA123EK,115 reliable?
The price and inventory of PDTA123EK,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA123EK,115 is usually 5 days.
3.What payment methods are accepted for PDTA123EK,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA123EK,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PDTA123EK,115?
PDTA123EK,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PDTA123EK,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PDTA123EK,115?
For technical support, including PDTA123EK,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA123EK,115 requirements.
6.How does Aetrix verify that PDTA123EK,115 is sourced from the original manufacturer or authorized distributors?
All PDTA123EK,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA123EK,115 meets industry standards.
7.What is the process for return or replacement of PDTA123EK,115?
All PDTA123EK,115 units undergo pre-shipment inspection (PSI). If there is an issue with PDTA123EK,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PDTA123EK,115 part is unused and in its original packaging.
Return procedure for PDTA123EK,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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