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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single, Pre-Biased Bipolar Transistors

Nexperia USA Inc. PDTA123ETVL

Name: PDTA123ETVL
Brand: Nexperia USA Inc.
SKU: PDTA123ETVL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PDTA123ETVL

Manufacturer:: Nexperia USA Inc.

Category:: Single, Pre-Biased Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PDTA123ETVL.pdf

Description:: TRANS PREBIAS PNP TO236AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,496

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Product details

Overview

PDTA123ETVL from NXP Semiconductors is a PNP resistor-equipped transistor (RET) with integrated 2.2 kΩ base bias resistors R1 and R2, designed for general-purpose switching in compact surface-mount applications. It features −50 V V_CEO, −100 mA I_O, −150 mV V_CEsat at I_C = −10 mA/I_B = −0.5 mA, and is housed in the SOT23 package - widely used in level-shifting, logic interface, and low-power driver circuits.

For engineers reviewing the PDTA123ETVL datasheet, PDTA123ETVL pinout, PDTA123ETVL application, or PDTA123ETVL equivalent, this part supports rapid PCB layout with built-in biasing, eliminates external base resistors, and enables direct replacement of discrete BJT + resistor networks in space-constrained consumer and industrial control designs.

Technical Context

This PNP RET integrates two precision-matched 2.2 kΩ resistors (R1 between base-emitter, R2 between base-collector) to provide fixed-current biasing without external components. Its −1.6 V typical V_i(on) and −0.5 V V_i(off) support TTL/CMOS-compatible input drive.

The device operates with V_CE up to −50 V and delivers reliable saturation down to −150 mV under −10 mA load, enabling efficient low-side switching. Thermal resistance R_th(j-a) is 500 K/W in SOT23, requiring minimal copper area for thermal management in ambient temperatures up to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum safe collector-emitter voltage before breakdown in open-base configuration
I_O	−100 mA - Continuous DC output current capability without derating at T_amb ≤ 25 °C
V_CEsat	−150 mV - Low saturation voltage ensures minimal power loss and heat generation in switching mode
R1 / R2	2.2 kΩ ±30% - Matched internal bias resistors eliminate need for external pull-up/pull-down components
h_FE	30 min - Minimum DC current gain at V_CE = −5 V, I_C = −20 mA, ensuring predictable turn-on behavior
P_tot	250 mW - Total power dissipation limit in SOT23 package, defining maximum steady-state load handling

Pinout & Package

Package: SOT23 - plastic surface-mounted package, 3 leads, body size 1.1 × 0.9 × 1.3 mm, optimized for high-density PCB assembly and reflow soldering only.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Internal node connecting R1 and R2	Provides pre-biased input node; no external resistor required for standard switching operation
2 (Collector)	Main current sink terminal	Connected to load supply rail; carries full switched current up to −100 mA
3 (Emitter)	Current return path and reference node	Typically tied to ground or low-side rail; defines common reference for input and output signals

Key Features

Feature	Design Value
Built-in R1/R2 bias network	Eliminates two external resistors, reducing BOM count and placement steps in automated assembly
−150 mV V_CEsat	Minimizes conduction loss in battery-powered or thermally constrained applications
−50 V V_CEO	Supports interfacing with 24 V industrial logic and relay drivers without additional voltage translation
T_j max = 150 °C	Enables reliable operation in enclosed enclosures or near heat-generating components

Applications

Logic Level Shifter

Microcontroller GPIO Driver

Use Scenario: Translating 3.3 V microcontroller outputs to drive 5 V or 12 V peripheral inputs.

IC Role / Device Role: PNP switch configured as active-low level shifter with emitter-follower or common-emitter topology.

Use Value: Built-in biasing ensures clean transition between logic states without external resistor tuning or risk of incomplete turn-off.

Use Scenario: Driving LEDs, small relays, or MOSFET gates directly from MCU I/O pins with limited current sourcing capability.

IC Role / Device Role: Low-side switch that sinks current from load to ground when enabled.

Use Value: −100 mA rating and −150 mV V_CEsat allow direct driving of 20 mA LEDs or 50 mA relay coils with <10 mW dissipation per channel.

Inverter Circuit

Interface Protection Stage

Use Scenario: Inverting digital signals between incompatible logic families (e.g., CMOS to TTL).

IC Role / Device Role: Single-transistor inverter with fixed bias, providing rail-to-rail output swing.

Use Value: −1.2 V to −0.5 V V_i(off) range ensures robust noise immunity against spurious low-level glitches.

Use Scenario: Isolating sensitive MCU pins from noisy industrial sensor or actuator lines.

IC Role / Device Role: Buffer stage absorbing transient currents and limiting fault current into controller I/O.

Use Value: −50 V V_CEO and −10 V V_EBO withstand induced transients on 24 V field wiring without latch-up or damage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP resistor-equipped transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PDTC123ET	NPN complement with identical R1/R2 values and SOT23 package; V_CEO = +50 V, I_O = +100 mA	Requires inverted logic drive and high-side load connection instead of low-side sinking	Select when circuit topology demands NPN configuration or positive-voltage switching
EMZ7T2R	PNP RET with R1 = 4.7 kΩ, R2 = 4.7 kΩ; higher input impedance but lower drive strength (h_FE min = 68)	Less suitable for fast-switching or high-current loads due to slower turn-on and higher V_CEsat	Prefer where reduced base current draw is critical and load current stays below −50 mA

Compared with PDTC123ET and EMZ7T2R, PDTA123ETVL offers optimal balance of low V_CEsat, robust −50 V rating, and standardized SOT23 footprint - making it the preferred choice for cost-sensitive, space-limited low-side switching where fixed PNP polarity is required.

Availability

PDTA123ETVL is available at Aetrix Electronics and suitable for logic interface design, microcontroller peripheral driving, and industrial signal inversion requiring stable component supply and long-term manufacturability.

Supply support for PDTA123ETVL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

PDTA123ETVL belongs to the PDTA123E series of resistor-equipped transistors - engineered to simplify discrete switching designs by integrating precision bias resistors, targeting high-volume consumer electronics and programmable logic interface markets.

FAQ

Is PDTA123ETVL pin-compatible with standard SOT23 PNP transistors?

No - PDTA123ETVL uses a proprietary pinout where Pin 1 is the internally biased base node, Pin 2 is collector, and Pin 3 is emitter. Standard discrete PNP transistors (e.g., BC807) assign Pin 1 as emitter, so direct substitution requires PCB layout revision and netlist updates.

Can PDTA123ETVL be used in linear amplification mode?

It is not recommended. The integrated R1/R2 network fixes the base bias point, limiting control over Q-point selection. Datasheet characterization focuses exclusively on switching parameters (V_CEsat, I_O, V_i(on/off)), with no small-signal h_fe or f_T data provided for analog use.

What is the maximum allowable peak current for PDTA123ETVL?

The absolute maximum peak collector current (I_CM) is −100 mA, as specified under limiting values. This applies to short-duration pulses only; sustained operation above −100 mA risks thermal runaway due to the 250 mW P_tot limit in SOT23 packaging.

Does PDTA123ETVL support lead-free reflow soldering?

Yes - the datasheet explicitly states "reflow soldering is the only recommended soldering method" and specifies JEDEC J-STD-020-compliant profiles. The SOT23 package is qualified for Pb-free assembly with peak temperatures up to 260 °C, and the device carries RoHS compliance per NXP's product status documentation.

PDTA123ETVL Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP - Pre-Biased

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: -

Resistor - Base (R1):: 2.2 kOhms

Resistor - Emitter Base (R2):: 2.2 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:: 30 @ 20mA, 5V

Vce Saturation (Max) @ Ib, Ic:: 150mV @ 500µA, 10mA

Current - Collector Cutoff (Max):: 1µA

Frequency - Transition:: -

Power - Max:: -

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PDTA123ETVL FAQ

1.How can I place an order for PDTA123ETVL through Aetrix?

Please submit a Request for Quotation (RFQ) for PDTA123ETVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PDTA123ETVL reliable?

The price and inventory of PDTA123ETVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PDTA123ETVL is usually 5 days.

3.What payment methods are accepted for PDTA123ETVL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PDTA123ETVL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PDTA123ETVL?

PDTA123ETVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PDTA123ETVL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PDTA123ETVL?

For technical support, including PDTA123ETVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PDTA123ETVL requirements.

6.How does Aetrix verify that PDTA123ETVL is sourced from the original manufacturer or authorized distributors?

All PDTA123ETVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PDTA123ETVL meets industry standards.

7.What is the process for return or replacement of PDTA123ETVL?

All PDTA123ETVL units undergo pre-shipment inspection (PSI). If there is an issue with PDTA123ETVL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PDTA123ETVL part is unused and in its original packaging.

Return procedure for PDTA123ETVL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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