NXP Semiconductors PDTA123JMB,315

Overview

PDTA123JMB,315 from Nexperia is a PNP digital transistor with integrated 2.2 kΩ base resistor and 10 kΩ base-emitter resistor, designed for low-power switching in portable electronics and logic interface circuits. It operates at V_CEO = –50 V, I_C = –100 mA, and features a typical DC current gain (h_FE) of 100 at I_C = –10 mA.

For engineers reviewing the PDTA123JMB,315 datasheet, PDTA123JMB,315 pinout, PDTA123JMB,315 application, or PDTA123JMB,315 equivalent, key selection considerations include its built-in bias network for simplified PCB layout, guaranteed saturation performance at low drive currents, and SOT-723 package compatibility with high-density routing requirements.

Technical Context

This device integrates two resistors (R₁ = 2.2 kΩ, R₂ = 10 kΩ) to form a single-base-biased PNP switch, eliminating external bias components. Its V_BE(ON) is specified at –1.1 V (I_C = –10 mA, I_B = –0.1 mA), enabling reliable turn-on with standard CMOS/TTL logic levels.

The SOT-723 package supports thermal dissipation up to 350 mW (P_tot), and the device meets AEC-Q101 stress test requirements for automotive-grade reliability under transient conditions.

Key Specifications

Pinout & Package

Package: SOT-723 - ultra-small surface-mount plastic package (1.2 × 0.8 × 0.5 mm), optimized for space-constrained portable designs and automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar digital transistor applications.

Compared with PDTA123JM,315, the PDTA123JMB,315 saves 0.7 mm² board area and improves thermal response; versus PDTC114YK,315, it enables direct replacement in PNP-sink configurations without logic inversion or netlist changes.

Availability

PDTA123JMB,315 is available at Aetrix Electronics and suitable for LED indicator control, logic-level translation, and microcontroller GPIO expansion requiring stable component supply across consumer, industrial, and automotive-tier production programs.

Supply support for PDTA123JMB,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, delivering high-volume, high-reliability discrete and logic devices.

The PDTA123JMB,315 belongs to Nexperia's Automotive Logic Transistor family, engineered specifically for space- and power-constrained digital switching in safety-critical and battery-operated systems.

FAQ

What is the maximum allowable base-emitter reverse voltage for PDTA123JMB,315?

The absolute maximum V_EB is –10 V. Exceeding this risks permanent damage to the internal base-emitter junction and integrated R₂ resistor. This rating applies under continuous DC conditions and must be respected during hot-plug or ESD events where transient reverse bias may occur.

Can PDTA123JMB,315 be used in linear amplification mode?

No. The device is characterized and qualified exclusively for switching operation. Its integrated resistors and guaranteed h_FE range are optimized for saturation and cutoff states-not analog gain linearity. Linear use violates datasheet operating conditions and voids AEC-Q101 qualification.

Is the SOT-723 package lead-free and RoHS compliant?

Yes. PDTA123JMB,315 uses lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life at ≤30 °C/85% RH.

How does the internal R₂ resistor affect turn-off speed?

The 10 kΩ base-emitter resistor actively discharges stored base charge, reducing turn-off delay time to typically 35 ns (V_CC = –5 V, R_L = 100 Ω). This enables clean switching at frequencies up to 3 MHz without external pull-down components.